ABSTRACT
Monoclinic gallium oxide (ß-Ga2O3) is attracting intense focus as a material for power electronics, thanks to its ultra-wide bandgap (4.5-4.8 eV) and ability to be easily doped n-type. Because the holes self-trap, the band-edge luminescence is weak; hence, ß-Ga2O3 has not been regarded as a promising material for light emission. In this work, optical and structural imaging methods revealed the presence of localized surface defects that emit in the near-UV (3.27 eV, 380 nm) when excited by sub-bandgap light. The PL emission of these centers is extremely bright-50 times brighter than that of single-crystal ZnO, a direct-gap semiconductor that has been touted as an active material for UV devices.
ABSTRACT
Chemiresistors (conductometric sensor) were fabricated on the basis of novel nanomaterials--silica nanosprings ALD coated with ZnO. The effects of high temperature and UV illumination on the electronic and gas sensing properties of chemiresistors are reported. For the thermally activated chemiresistors, a discrimination mechanism was developed and an integrated sensor-array for simultaneous real-time resistance scans was built. The integrated sensor response was tested using linear discriminant analysis (LDA). The distinguished electronic signatures of various chemical vapors were obtained at ppm level. It was found that the recovery rate at high temperature drastically increases upon UV illumination. The feasibility study of the activation method by UV illumination at room temperature was conducted.
