ABSTRACT
Silicon (Si) nano-electronics is advancing towards the end of the Moore's Law, as gate lengths of just a few nanometers have been already reported in state-of-the-art transistors. In the nanostructures that act as channels in transistors or depletion layers in pn diodes, the role of dopants becomes critical, since the transport properties depend on a small number of dopants and/or on their random distribution. Here, we present the possibility of single-charge tunneling in codoped Si nanodevices formed in silicon-on-insulator films, in which both phosphorus (P) donors and boron (B) acceptors are introduced intentionally. For highly doped pn diodes, we report band-to-band tunneling (BTBT) via energy states in the depletion layer. These energy states can be ascribed to quantum dots (QDs) formed by the random distribution of donors and acceptors in such a depletion layer. For nanoscale silicon-on-insulator field-effect transistors (SOI-FETs) doped heavily with P-donors and also counter-doped with B-acceptors, we report current peaks and Coulomb diamonds. These features are ascribed to single-electron tunneling (SET) via QDs in the codoped nanoscale channels. These reports provide new insights for utilizing codoped silicon nanostructures for fundamental applications, in which the interplay between donors and acceptors can enhance the functionalities of the devices.
ABSTRACT
Highly transparent thin films with the chemical formula BaSrMgWO6 were deposited by spin coating using a solution of nitrates of Ba, Sr, and Mg and ammonium paratungstate in dimethylformamide with a Ba:Sr:Mg:W ratio = 1:1:1:1. XRD, SEM, EDX, and XPS investigations evidenced that annealing at 800 °C for 1 h results in an amorphous structure having a precipitate on its surface, and that supplementary annealing at 850 °C for 45 min forms a nanocrystalline structure and dissolves a portion of the precipitates. A textured double perovskite cubic structure (61.9%) was found, decorated with tetragonal and cubic impurity phases (12.7%), such as BaO2, SrO2, and MgO, and an under-stoichiometric phase (24.4%) with the chemical formula Ba2-(x+y) SrxMgyWO5. From transmittance measurements, the values of the optical band gap were estimated for the amorphous (Egdir = 5.21 eV, Egind = 3.85 eV) and nanocrystalline (Egdir = 4.69 eV, Egind = 3.77 eV) phases. The presence of a lattice disorder was indicated by the high Urbach energy values and weak absorption tail energies. A decrease in their values was observed and attributed to the crystallization process, lattice strain diminution, and cation redistribution.
ABSTRACT
In this work, optical, including photoluminescence and photosensitivity, characteristics of micrometer-sized flexible n (p)-InSe/In2O3 heterojunctions, obtained by heat treatment of single-crystalline InSe plates doped with (0.5 at.%) Cd (Sn), in a water-vapor- and oxygen-enriched atmosphere, are investigated. The Raman spectrum of In2O3 layers on an InSe:Sn substrate, in the wavelength range of 105-700 cm-1, contains the vibration band characteristic of the cubic (bcc-In2O3) phase. As revealed by EDX spectra, the In2O3 layer, ~2 µm thick, formed on InSe:Cd contains an ~18% excess of atomic oxygen. The absorption edge of InSe:Sn (Cd)/In2O3 structures was studied by ultraviolet reflectance spectroscopy and found to be 3.57 eV and ~3.67 eV for InSe:Cd and InSe:Sn substrates, respectively. By photoluminescence analysis, the influence of doping impurities on the emission bands of In2O3:Sn (Cd) was revealed and the energies of dopant-induced and oxygen-induced levels created by diffusion into the InSe layer from the InSe/In2O3 interface were determined. The n (p)-InSe/In2O3 structures display a significantly wide spectral range of photosensitivity (1.2-4.0 eV), from ultraviolet to near infrared. The influence of Cd and Sn concentrations on the photosensitivity and recombination of nonequilibrium charge carriers in n (p)-InSe layers from the heterojunction interface was also studied. The as-obtained nanosized InSe/In2O3 structures are suitable for optoelectronic applications.
ABSTRACT
The oxidative stress induced by light exposed gold nanoparticles in some microorganism cells was investigated. Gold nanoparticles are currently used in biomedical and pharmaceutical research. For this study citrate-gold nanoparticles were synthesized in alkaline conditions at constant temperature of 85°C under magnetic stirring. Equal volumes of such prepared colloidal solution, were exposed to visible light at different wavelengths for 90min at room temperature. The spectra in the visible and ultraviolet range have revealed an increase in the intensity of the absorption band for gold nanoparticles exposed to light, due to the effect of surface plasmon resonance. Versatility of gold nanoparticles photocatalytic action was shown by means of manipulating wavelengths of incident light, which evidenced differences in the bioeffects induced in cellulolytic fungi - known for their environmental role but also for other applications such as in cosmetics industry. The comparative analysis of fungal response to gold nanoparticle stressors has revealed different enzyme activity and lipid peroxidation when fungi were supplied with gold nanoparticles exposed to different wavelength lights. The activity of catalase and superoxide dismutase were remarkably increased for green light exposure of gold nanoparticles suggesting fungi adaption to increased oxidative stress induced by irradiated particles; increased level of lipid peroxidation was showed by high concentration of malondialdehyde for white light exposed gold particles since antioxidant enzymes were less active.
