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1.
Article in English | MEDLINE | ID: mdl-37028316

ABSTRACT

Surface plasmon resonance (SPR) type ultrasonic sensors enable local measurements and have a flat frequency response in a wide frequency range. They are expected to be used in photoacoustic microscopy (PAM) and other applications that require broadband ultrasonic detection. In this study, we focus on the precise measurement of ultrasound pressure waveforms via a Kretschmann-type SPR sensor. The noise equivalent pressure was estimated to be 52 Pa [Formula: see text], and the maximum amplitude of the wave measured via the SPR sensor linearly responded to the pressure until 427 kPa [Formula: see text]. Furthermore, the observed waveform for each applied pressure agreed well with the waveforms measured via the calibrated ultrasonic transducer (UT) in the MHz range. Moreover, we focused on the effect of the sensing diameter on the frequency response of the SPR sensor. The results show that the beam diameter reduction improved the frequency response at high frequencies. Evidently, we found that the sensing diameter of the SPR sensor must be carefully selected in consideration of the measurement frequency.

2.
Article in English | MEDLINE | ID: mdl-35389864

ABSTRACT

A pump-probe system with a subnanosecond pulsed laser is expected to be a compact and inexpensive transient spectroscopic system that enables nondestructive and noncontact evaluations of the physical properties. However, an improvement in the sensitivity and a theoretical model to complement the measurement signal are necessary to obtain the transient signal precisely because of the low sensitivity and large time resolution. We have developed a highly sensitive pump-probe system with a subnanosecond pulsed laser that combines signal amplification based on surface plasmon resonance (SPR) in this study. An integrated theoretical model of the transient response obtained by a subnanosecond pump-probe under the SPR condition was proposed. Our model consisted of the profile descriptions of the used pulse source, temperature change, generated thermoelastic stress, estimated permittivity change in the metal film, and estimated reflectivity change. The theoretical estimations in the time domain and the incident angle dependence were compared with those of the experimental results to verify our theory. As a result, the estimations were well in agreement with the experimental results. Moreover, the signal-amplification mechanism based on SPR was discussed using our theory. The amplification was caused by the broadening of the resonant curve of SPR and the shift of the resonant angle, which seemed to come from the increase in the electron-phonon scattering rate and the thermal expansion of the metal film, respectively. A clear mechanism of SPR-based signal amplification of the subnanosecond pump-probe was identified through experimental and theoretical approaches.


Subject(s)
Models, Theoretical , Surface Plasmon Resonance , Light , Metals , Surface Plasmon Resonance/methods
3.
Article in English | MEDLINE | ID: mdl-30028697

ABSTRACT

It is difficult to perform 2-D imaging of elastic properties using the Brillouin scattering technique because the weak thermal phonon signal in the sample leads to low measurement accuracy and long measurement times. To improve the phonon signal, we artificially induced acoustic phonons using a ScAlN thin-film piezoelectric transducer, which has a giant piezoelectricity. The film was grown using RF magnetron sputtering of a ScAl alloy target on a silica glass bar sample. Using a microwave probe, the electric power applied to the film was 1 mW at 875 MHz. We obtained the enhancement of the Brillouin scattering signal in the silica glass bar sample due to the induced phonons. Compared with and without the induced phonons from the ScAlN film transducer, the peak intensity improved by nearly 3 orders of magnitude. This technique can significantly shorten the time required for the Brillouin scattering measurements.

4.
Article in English | MEDLINE | ID: mdl-28113844

ABSTRACT

We have experimentally investigated wave velocities and refractive indices in bulk and film samples [a GaN single crystal plate and c-axis-oriented ScxAl(1-x)N (x = 0.00-0.63) films] by Brillouin scattering. All of the piezoelectrically unstiffened elastic constants and the ordinary refractive index of the GaN single crystal plate were determined from the reflection induced A (RIA) scattering geometry and the combination of 90R and 180° scattering geometries. The uncertainties of the measured wave velocities were approximately 0.17% (RIA) and 2.5% (combination technique). In addition, the longitudinal wave velocities of ScxAl(1-x)N films propagating in the normal direction were obtained by the combination technique. The maximum uncertainty was approximately 3.3%. The shear wave velocities and refractive indices of ScxAl(1-x)N films were also investigated by the 90R scattering geometry using velocities measured by high-overtone bulk acoustic resonators. The softening trends of the elasticity were obtained from the measured longitudinal and shear wave velocities, although there were large uncertainties in the Brillouin measurement system owing to thermal instability.

5.
Article in English | MEDLINE | ID: mdl-25073138

ABSTRACT

The resistivity-frequency characteristics of longitudinal wave velocities propagating parallel to the c-axis in a GaN single crystal were theoretically estimated by considering the piezoelectric acousto-electric effect. The temperature and frequency dependences of longitudinal and shear wave velocities in conductive and semiconductive GaN single-crystal samples were experimentally investigated by Brillouin scattering. The temperature dependence of longitudinal and shear wave velocities had a linear tendency in the conductive sample, whereas in the semiconductive sample, those had a similar tendency to the predicted velocity changes resulting from the piezoelectric stiffening effect. However, the temperature dependence of shear wave velocity, which does not possess piezoelectric coupling, had a tendency similar to that of the longitudinal wave in the semiconductive sample, unexpectedly. The frequency dependence of longitudinal wave velocities in the semiconductive sample had a tendency similar to the predicted velocity changes resulting from the piezoelectric stiffening effect.

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