ABSTRACT
Using ultraviolet (UV)-excited ozone gas, we prepared high-quality SiO(2) films that can be used as gate dielectric films on poly-silicon or silicon wafers without sample heating. The UV-excited ozone gas was generated by UV irradiation of highly concentrated ozone gas. During the UV-excited ozone process, UV light irradiates the sample surface directly through the ozone gas. Then, the temperature at the sample surface is increased by UV-light absorption at the surface. Estimation of this surface temperature is important for understanding the oxidation mechanism. We estimated the surface temperature obtained during UV irradiation to be about 300 degrees C by investigating the temperature dependence of the oxidation rate for oxygen gas. We have previously determined that almost no thermal decomposition of ozone gas occurs at this temperature, and that oxygen gas does not oxidize the Si substrate. Therefore, we concluded that the only oxidation species in the UV-excited ozone process is UV-excited ozone O((1)D).
ABSTRACT
The current standardization activities of ISO (International Organization for Standardization) TC229 on "Nanotechnology" are introduced with focus on the work of WG2 (Working Group 2) for "measurement and characterization". Seven project groups of WG2 are actively preparing standard protocols (technical specifications) for characterization of single-wall carbon nanotubes (SWCNTs) by measurement methods such as TEM (transmission electron microscopy), SEM (scanning electron microscopy), EDX (energy-dispersive X-ray analysis), UV-Vis-NIR (ultraviolet-visible-near infrared) absorption spectroscopy, NIR-photoluminescence spectroscopy, EGA (evolved gas analysis)-GC-MS (gas chromatography-mass spectrometry), TGA (thermogravimetric analysis), and Raman spectroscopy; this work is described. The features of purity evaluation of SWCNTs by these methods are also briefly described and compared. Also described are two project groups of WG2 that are preparing standard protocols for characterization of multiwall CNTs (MWCNTs), aiming at the purity control by measurement of moisture content, ash content, metallic constituents, volatile content, polyaromatic hydrocarbon content, and carbon materials excluding MWCNTs. Other important properties for characterization of MWCNT, for example disorder, burning property, stacking nature, length, morphology, and inner/outer diameter, etc., are also mentioned. Finally, the importance and urgency of standardization for potential risk assessment of CNTs is briefly described, and current joint activity of ISO TC229 WG2 and WG3 for physicochemical characterization of engineered nanoscale materials for toxicological assessment is introduced.
ABSTRACT
A new tip characterizer based on the fabrication of multilayer thin films for atomic force microscopy (AFM) was developed to analyze the effective tip shape while in use. The precise structure of this tip characterizer was measured by transmission electron microscopy. Four different types of commercial tips with various radii were characterized by the tip characterizer and by conventional scanning electron microscopy (SEM). The results were compared to obtain a relationship between the actual and effective tip shapes. A quantitative analysis was performed of apex radii measured from line profiles of comb-shaped patterns and nanometer-scale knife-edges without the problem of edge uncertainty in the SEM image. Degradation of the AFM tip induced by electron-beam irradiation was studied by using SEM and the tip characterizer. A potential technique for fabricating symmetric AFM tips based on irradiation by an electron beam and a quantitative analysis of changing the tip apex in SEM were examined with AFM using the tip characterizer.
ABSTRACT
Understanding the oxidation of silicon has been an ongoing challenge for many decades. Ozone has recently received considerable attention as an alternative oxidant in the low temperature, damage-free oxidation of silicon. The ozone-grown oxide was also found to exhibit improved interface and electrical characteristics over a conventionally dioxygen-grown oxide. In this review article, we summarize the key findings about this alternative oxidation process. We discuss the different methods of O(3) generation, and the advantages of the ozone-grown Si/SiO(2) interface. An understanding of the growth characteristics is of utmost importance for obtaining control over this alternative oxidation process.
