Rhabdomyolysis caused by interaction between rosuvastatin and vadadustat: a case control study.

BACKGROUND: Rhabdomyolysis is a potentially life-threatening disease caused by melting or necrosis of skeletal muscle cells and leakage of muscle components into the bloodstream. It has been reported that the interaction of the HMG-CoA reductase inhibitor rosuvastatin with the renal anemia drug vadadustat increases the blood concentration of rosuvastatin in vitro. In this study, we report a case of suspected rhabdomyolysis caused by the drug interaction of rosuvastatin and vadadustat in clinical practice. CASE PRESENTATION: A 62-year-old male with medical records of hypertension, myocardial infarction, chronic renal failure, renal anemia, dyslipidemia, and alcoholic liver disease. The patient had been diagnosed with chronic kidney disease (CKD) at the Department of Nephrology, and treated by outpatient care with renal support therapy for the past two years. On X-63 day, his prescription was rosuvastatin (10 mg/day) and a continuous erythrocyte-stimulating agent, epoetin beta pegol (genetical recombination, 100 µg). X-Day 0, blood tests revealed creatine phosphokinase (CPK) 298 U/L, serum creatinine (SCr) 5.26 mg/dL, and hemoglobin (Hb) 9.5 g/dL; thus, the prescription was changed from epoetin beta pegol 100 µg to vadadustat 300 mg/day. On X + day 80, a prescription for a diuretic (azosemide 15 mg/day) was added for swelling of the lower extremities. On X + day 105, we found CPK 16,509 U/L, SCr 6.51 mg/dL, and Hb 9.5 g/dL. The patient was diagnosed as rhabdomyolysis and hospitalized. After hospitalization, rosuvastatin and vadadustat were discontinued and we administered intravenous fluids. Thereafter, CPK and SCr values of the patient improved. On X + day 122, CPK improved to 29 U/L, SCr to 2.6 mg/dL, and Hb to 9.6 g/dL, and he was discharged on X + day 124. At discharge, rosuvastatin 2.5 mg/day was resumed. A blood test on X + day 133 showed CPK 144 U/L and SCr 4.2 mg/dL. CONCLUSION: We experienced a case of rhabdomyolysis caused by drug interactions between rosuvastatin and vadadustat.

Single-Crystal Growth of Cl-Doped n-Type SnS Using SnCl2 Self-Flux.

SnS is a promising photovoltaic semiconductor owing to its suitable band gap energy and high optical absorption coefficient for highly efficient thin film solar cells. The most significant carnage is demonstration of n-type SnS. In this study, Cl-doped n-type single crystals were grown using SnCl2 self-flux method. The obtained crystal was lamellar, with length and width of a few millimeters and thickness ranging between 28 and 39 µm. X-ray diffraction measurements revealed the single crystals had an orthorhombic unit cell. Since the ionic radii of S2- and Cl- are similar, Cl doping did not result in substantial change in lattice parameter. All the elements were homogeneously distributed on a cleaved surface; the Sn/(S + Cl) ratio was 1.00. The crystal was an n-type degenerate semiconductor with a carrier concentration of ∼3 × 1017 cm-3. Hall mobility at 300 K was 252 cm2 V-1 s-1 and reached 363 cm2 V-1 s-1 at 142 K.

First-Principles Study of CuGaO2 Polymorphs: Delafossite α-CuGaO2 and Wurtzite ß-CuGaO2.

The electronic structures of delafossite α-CuGaO2 and wurtzite ß-CuGaO2 were calculated based on density functional theory using the local density approximation functional including the Hubbard correction (LDA+U). The differences in the electronic structure and physical properties between the two polymorphs were investigated in terms of their crystal structures. Three major structural features were found to influence the electronic structure. The first feature is the atomic arrangements of cations. In the conduction band of α-CuGaO2 with a layered structure of Cu2O and Ga2O3, Cu and Ga states do not mix well; the lower part of the conduction band mainly consists of Cu 4s and 4p states, and the upper part consists of Ga 4s and 4p states. By contrast, in ß-CuGaO2, which is composed of CuO4 and GaO4 tetrahedra, Cu and Ga states are well-mixed. The second feature is the coordination environment of Cu atoms; the breaking of degeneracy of Cu 3d orbitals is determined by the crystal field. Dispersion of the Cu 3d valence band of ß-CuGaO2, in which Cu atoms are tetrahedrally coordinated to oxygen atoms, is smaller than those in α-CuGaO2, in which Cu atoms are linearly coordinated to oxygen atoms; this results in a larger absorption coefficient and larger hole effective mass in ß-CuGaO2 than in α-CuGaO2. The interatomic distance between Cu atoms-the third feature-also influences the dispersion of the Cu 3d valence band (i.e., the effective hole mass); the effective hole mass decreases with decreasing interatomic distance between Cu atoms in each structure. The results obtained are valuable for understanding the physical properties of oxide semiconductors containing monovalent copper and silver.

Rhodium-catalyzed 1,4-addition of arylboronic acids to alpha,beta-unsaturated carbonyl compounds: large accelerating effects of bases and ligands.

The effects of ligands and bases in the rhodium(I)-catalyzed 1,4-addition of arylboronic acids to alpha,beta-unsaturated carbonyl compounds were reinvestigated to carry out the reaction under mild conditions. Rhodium(I) complexes possessing a 1,5-cyclooctadiene (cod) and a hydroxo ligand such as [RhOH(cod)](2) exhibited excellent catalyst activities compared to those of the corresponding rhodium-acac or -chloro complexes and their phosphine derivatives. The reaction was further accelerated in the presence of KOH, thus allowing the 1,4-addition even at 0 degrees C. A cationic rhodium(I)-(R)-binap complex, [Rh(R-binap)(nbd)]BF(4), catalyzed the reaction at 25-50 degrees C in the presence of Et(3)N with high enantioselectivities of up to 99% ee for alpha,beta-unsaturated ketones, 92% for aldehydes, 94% for esters, and 92% for amides.