ABSTRACT
Carbon electrode-based perovskite solar cells (c-PSCs) without a hole transport layer (HTL) have obtained a significant interest owing to their cost-effective, stable, and simplified structure. However, their application is limited by low efficiency and the prevalence of high-temperature processed electron transport layer (ETL), e.g. TiO2, which also has poor optoelectronic properties, including low conductivity and mobility. In this study, a series of organic materials, namely PCBM ((Park et al., 2023; Park et al., 2023) [6,6]-phenyl-C61-butyric acid methyl ester, C72H14O2), Alq3 (Al(C9H6NO)3), BCP (2,9-Dimethyl-4,7-diphenyl-1,10-phenanthroline, C26H20N2), C60, ICBA (indene-C60 bisadduct, C78H16) and PEIE (poly (ethylenimine) ethoxylated, (C37H24O6N2)n) have been numerically analyzed in SCAPS-1D solar simulator to explore alternative potential ETL materials for HTL-free c-PSCs. The presented device has FTO/ETL/CH3NH3PbI3/carbon structure, and its performance is optimized based on significant design parameters. The highest achieved PCEs for PCBM, Alq3, BCP, C60, ICBA, and PEIE-based devices are 22.85%, 19.08%, 20.99%, 25.51%, 23.91%, and 22.53%, respectively. These PCEs are obtained for optimum absorber thickness for each case, with an acceptor concentration of 1.0 × 1017 cm-3 and defect density of 2.5 × 1013 cm-3. The C60-based cell has been found to outperform with device parameters as Voc of 1.29 V, Jsc of 23.76 mA/cm2, and FF of 82.67%. As the design lacks stability when only organic materials are employed, each of the presented devices have been analyzed by applying BiI3, LiF, and ZnO as protective layers with the performances not compromised. We believe that our obtained results will be of great interest in developing stable and efficient HTL-free c-PSCs.
ABSTRACT
A perfect absorber in the visible-infrared regime maintaining its performance at elevated temperatures and under a harsh environment is needed for energy harvesting using solar-thermophotovoltaic (STPV) systems. A near-perfect metasurface absorber based on lossy refractory metal nitride, zirconium-nitride (ZrN), having a melting-point of 2,980°C, is presented. The numerically proposed design with metal-insulator-metal configuration exhibits an average of > 95% for 400-800 nm and 86% for 280-2200 nm. High absorption is attributed to magnetic resonance leading to free-space impedance matching. The subwavelength structure is polarization- and angle-insensitive and is highly tolerant to fabrication imperfections. An emitter is optimized for bandgap energy ranging from 0.7 eV-1.9 eV.
