ABSTRACT
We demonstrate a hitless wavelength-selective switch (WSS) based on InGaAs/InAlAs five-layer asymmetric coupled quantum well (FACQW) quadruple series-coupled microring resonators. The WSS is driven by the electric-field-induced change in refractive index in the FACQW core layer caused by the quantum-confined Stark effect (QCSE) for high-speed operation. The WSS with high-mesa waveguides is fabricated on a molecular beam epitaxy-grown wafer by dry etching. The fabricated WSS consists of four microrings, each with a round-trip length of 350 µm and five directional couplers with shallow grooves. A boxlike spectral response and hitless switching with higher extinction ratios than a double series-coupled microring resonator are successfully demonstrated. In addition, we propose the improvement of switching characteristics by controlling the coupling efficiencies at the directional couplers.
ABSTRACT
A hitless wavelength-selective switch (WSS) based on InGaAs/InAlAs multiple quantum well (MQW) second-order series-coupled microring resonators is proposed and fabricated. In the core layer, a five-layer asymmetric coupled quantum well (FACQW) structure is employed. The WSS is driven by the electrorefractive index change in the FACQW core layer caused by the quantum-confined Stark effect (QCSE). The wafer for the WSS is grown by molecular beam epitaxy and waveguide structures are formed by dry etching. Boxlike spectrum responses and hitless switching characteristics of the WSS are successfully demonstrated for the first time. The change in coupling efficiency at a coupler between a ring and a busline and between rings and its effect on the switching characteristics are also discussed.
