Multilateral surface analysis of the CeB6 electron-gun cathode used at SACLA XFEL.

The CeB6(001) single crystal used as a cathode in a low-emittance electron gun and operated at the free-electron laser facility SACLA was investigated using cathode lens electron microscopy combined with X-ray spectroscopy at SPring-8 synchrotron radiation facility. Multilateral analysis using thermionic emission electron microscopy, low-energy electron microscopy, ultraviolet and X-ray photoemission electron microscopy and hard X-ray photoemission spectroscopy revealed that the thermionic electrons are emitted strongly and evenly from the CeB6 surface after pre-activation treatment (annealing at 1500°C for >1 h) and that the thermionic emission intensity as well as elemental composition vary between the central area and the edge of the old CeB6 surface.

Skewed electronic band structure induced by electric polarization in ferroelectric BaTiO3.

Skewed band structures have been empirically described in ferroelectric materials to explain the functioning of recently developed ferroelectric tunneling junction (FTJs). Nonvolatile ferroelectric random access memory (FeRAM) and the artificial neural network device based on the FTJ system are rapidly developing. However, because the actual ferroelectric band structure has not been elucidated, precise designing of devices has to be advanced through appropriate heuristics. Here, we perform angle-resolved hard X-ray photoemission spectroscopy of ferroelectric BaTiO3 thin films for the direct observation of ferroelectric band skewing structure as the depth profiles of atomic orbitals. The depth-resolved electronic band structure consists of three depth regions: a potential slope along the electric polarization in the core, the surface and interface exhibiting slight changes. We also demonstrate that the direction of the energy shift is controlled by the polarization reversal. In the ferroelectric skewed band structure, we found that the difference in energy shifts of the atomic orbitals is correlated with the atomic configuration of the soft phonon mode reflecting the Born effective charges. These findings lead to a better understanding of the origin of electric polarization.

Thickness-induced metal to insulator transition in Ru nanosheets probed by photoemission spectroscopy: Effects of disorder and Coulomb interaction.

We investigated the electronic structures of mono- and few-layered Ru nanosheets (N layers (L) with N = 1, ~6, and ~9) on Si substrate by ultra-violet and x-ray photoemission spectroscopies. The spectral density of states (DOS) near EF of ~6 L and 1 L is suppressed as it approaches EF in contrast to that of ~9 L, which is consistent with the Ru 3 d core-level shift indicating the reduction of the metallic conductivity. A power law g(ε) ∝ |ε - εF|α well reproduces the observed spectral DOS of ~6 L and 1 L. The evolution of the power factor α suggests that the transition from the metallic state of ~9 L to the 2-dimensional insulating state with the soft Coulomb gap of 1 L through the disordered 3-dimensional metallic state of ~6 L.

Band bending and dipole effect at interface of metal-nanoparticles and TiO2 directly observed by angular-resolved hard X-ray photoemission spectroscopy.

This paper describes the observation of band bending and band edge shifts at the interfaces between nanoscale metals and TiO2 film over a wide depth range by angular-resolved hard X-ray photoemission spectroscopy (HAXPES). The HAXPES results indicate strong electrostatic interactions between the TiO2 semiconductor and metal nanoparticles, while density functional theory (DFT) calculations suggest that these interactions are primarily associated with charge transfer leading to electric dipole moments at the interface in the ground state. The effects of these dipole moments are not limited to the surface but also occur deep in the bulk of the semiconductor, and are highly dependent on the coverage of the metal nanoparticles on the semiconductor species.

Angle-Resolved HAXPES Investigation on the Chemical Origin of Adhesion between Natural Rubber and Brass.

Bulk sensitivity of hard X-ray photoelectron spectroscopy (HAXPES) makes this technique suitable for chemical state analysis of bulk and deeply buried interfaces of solid materials. HAXPES is employed in the present study to examine the chemical state of adhesive interfaces between natural rubber and copper-zinc alloy, i.e., brass, while maintaining the adhesion structure in order to understand the chemical mechanism of rubber-to-brass adhesion. Angle-resolved measurements allow to distinguish between chemical species in rubber and those at the adhesive interface. We specially focus on sulfur-containing species because metal sulfides at the interface have been suggested to be crucial for adhesion. Line-shape analysis of S 1s spectra reveals that the interface that exhibits a strong adhesive property is mainly composed of copper sulfides with a predominant amount of CuS. This type of the interfacial chemical state is obtained when a rubber-bonded brass sample is subjected to vulcanization at 170 °C for 10 min. However, prolonged vulcanization leads to a partial dissolution of CuS as well as accumulation of Zn species in the form of ZnO/Zn(OH)2 and ZnS, and as a result, adhesion strength is lowered. The present study paves the way for accurate and detailed discussion on the chemical state of deeply buried interfaces through bulk sensitive in-situ measurements.

Reversible Changes in Resistance of Perovskite Nickelate NdNiO3 Thin Films Induced by Fluorine Substitution.

Perovskite nickel oxides are of fundamental as well as technological interest because they show large resistance modulation associated with phase transition as a function of the temperature and chemical composition. Here, the effects of fluorine doping in perovskite nickelate NdNiO3 epitaxial thin films are investigated through a low-temperature reaction with polyvinylidene fluoride as the fluorine source. The fluorine content in the fluorinated NdNiO3-xFx films is controlled with precision by varying the reaction time. The fully fluorinated film (x ≈ 1) is highly insulating and has a bandgap of 2.1 eV, in contrast to NdNiO3, which exhibits metallic transport properties. Hard X-ray photoelectron and soft X-ray absorption spectroscopies reveal the suppression of the density of states at the Fermi level as well as the reduction of nickel ions (valence state changes from +3 to +2) after fluorination, suggesting that the strong Coulombic repulsion in the Ni 3d orbitals associated with the fluorine substitution drives the metal-to-insulator transition. In addition, the resistivity of the fluorinated films recovers to the original value for NdNiO3 after annealing in an oxygen atmosphere. By application of the reversible fluorination process to transition-metal oxides, the search for resistance-switching materials could be accelerated.

Formation of a K-In-Se Surface Species by NaF/KF Postdeposition Treatment of Cu(In,Ga)Se2 Thin-Film Solar Cell Absorbers.

A NaF/KF postdeposition treatment (PDT) has recently been employed to achieve new record efficiencies of Cu(In,Ga)Se2 (CIGSe) thin film solar cells. We have used a combination of depth-dependent soft and hard X-ray photoelectron spectroscopy as well as soft X-ray absorption and emission spectroscopy to gain detailed insight into the chemical structure of the CIGSe surface and how it is changed by different PDTs. Alkali-free CIGSe, NaF-PDT CIGSe, and NaF/KF-PDT CIGSe absorbers grown by low-temperature coevaporation have been interrogated. We find that the alkali-free and NaF-PDT CIGSe surfaces both display the well-known Cu-poor CIGSe chemical surface structure. The NaF/KF-PDT, however, leads to the formation of bilayer structure in which a K-In-Se species covers the CIGSe compound that in composition is identical to the chalcopyrite structure of the alkali-free and NaF-PDT absorber.

Potassium Postdeposition Treatment-Induced Band Gap Widening at Cu(In,Ga)Se2 Surfaces--Reason for Performance Leap?

Direct and inverse photoemission were used to study the impact of alkali fluoride postdeposition treatments on the chemical and electronic surface structure of Cu(In,Ga)Se2 (CIGSe) thin films used for high-efficiency flexible solar cells. We find a large surface band gap (E(g)(Surf), up to 2.52 eV) for a NaF/KF-postdeposition treated (PDT) absorber significantly increases compared to the CIGSe bulk band gap and to the Eg(Surf) of 1.61 eV found for an absorber treated with NaF only. Both the valence band maximum (VBM) and the conduction band minimum shift away from the Fermi level. Depth-dependent photoemission measurements reveal that the VBM decreases with increasing surface sensitivity for both samples; this effect is more pronounced for the NaF/KF-PDT CIGSe sample. The observed electronic structure changes can be linked to the recent breakthroughs in CIGSe device efficiencies.

Low-temperature catalyst activator: mechanism of dense carbon nanotube forest growth studied using synchrotron radiation.

The mechanism of the one-order-of-magnitude increase in the density of vertically aligned carbon nanotubes (CNTs) achieved by a recently developed thermal chemical vapor deposition process was studied using synchrotron radiation spectroscopic techniques. In the developed process, a Ti film is used as the underlayer for an Fe catalyst film. A characteristic point of this process is that C2H2 feeding for the catalyst starts at a low temperature of 450°C, whereas conventional feeding temperatures are ∼800°C. Photoemission spectroscopy using soft and hard X-rays revealed that the Ti underlayer reduced the initially oxidized Fe layer at 450°C. A photoemission intensity analysis also suggested that the oxidized Ti layer at 450°C behaved as a support for nanoparticle formation of the reduced Fe, which is required for dense CNT growth. In fact, a CNT growth experiment, where the catalyst chemical state was monitored in situ by X-ray absorption spectroscopy, showed that the reduced Fe yielded a CNT forest at 450°C. Contrarily, an Fe layer without the Ti underlayer did not yield such a CNT forest at 450°C. Photoemission electron microscopy showed that catalyst annealing at the conventional feeding temperature of 800°C caused excess catalyst agglomeration, which should lead to sparse CNTs. In conclusion, in the developed growth process, the low-temperature catalyst activation by the Ti underlayer before the excess Fe agglomeration realised the CNT densification.

Distinct electronic structure of the electrolyte gate-induced conducting phase in vanadium dioxide revealed by high-energy photoelectron spectroscopy.

The development of new phases of matter at oxide interfaces and surfaces by extrinsic electric fields is of considerable significance both scientifically and technologically. Vanadium dioxide (VO2), a strongly correlated material, exhibits a temperature-driven metal-to-insulator transition, which is accompanied by a structural transformation from rutile (high-temperature metallic phase) to monoclinic (low-temperature insulator phase). Recently, it was discovered that a low-temperature conducting state emerges in VO2 thin films upon gating with a liquid electrolyte. Using photoemission spectroscopy measurements of the core and valence band states of electrolyte-gated VO2 thin films, we show that electronic features in the gate-induced conducting phase are distinct from those of the temperature-induced rutile metallic phase. Moreover, polarization-dependent measurements reveal that the V 3d orbital ordering, which is characteristic of the monoclinic insulating phase, is partially preserved in the gate-induced metallic phase, whereas the thermally induced metallic phase displays no such orbital ordering. Angle-dependent measurements show that the electronic structure of the gate-induced metallic phase persists to a depth of at least ∼40 Å, the escape depth of the high-energy photoexcited electrons used here. The distinct electronic structures of the gate-induced and thermally induced metallic phases in VO2 thin films reflect the distinct mechanisms by which these states originate. The electronic characteristics of the gate-induced metallic state are consistent with the formation of oxygen vacancies from electrolyte gating.

Symmetry of valence states of Heusler compounds explored by linear dichroism in hard-x-ray photoelectron spectroscopy.

This study reports on the linear dichroism in angular-resolved photoemission from the valence band of the Heusler compounds NiTi0.9Sc0.1Sn and NiMnSb. High-resolution photoelectron spectroscopy was performed with an excitation energy of hν = 7.938 keV. The linear polarization of the photons was changed using an in-vacuum diamond phase retarder. The valence band spectra exhibit the typical structure expected from first-principles calculations of the electronic structure of these compounds. Noticeable linear dichroism is found in the valence band of both materials, and this allows for a symmetry analysis of the contributing states. The differences in the spectra are found to be caused by symmetry-dependent angular asymmetry parameters, and these occur even in polycrystalline samples without preferential crystallographic orientation.

From local structure to nanosecond recrystallization dynamics in AgInSbTe phase-change materials.

Phase-change optical memories are based on the astonishingly rapid nanosecond-scale crystallization of nanosized amorphous 'marks' in a polycrystalline layer. Models of crystallization exist for the commercially used phase-change alloy Ge(2)Sb(2)Te(5) (GST), but not for the equally important class of Sb-Te-based alloys. We have combined X-ray diffraction, extended X-ray absorption fine structure and hard X-ray photoelectron spectroscopy experiments with density functional simulations to determine the crystalline and amorphous structures of Ag(3.5)In(3.8)Sb(75.0)Te(17.7) (AIST) and how they differ from GST. The structure of amorphous (a-) AIST shows a range of atomic ring sizes, whereas a-GST shows mainly small rings and cavities. The local environment of Sb in both forms of AIST is a distorted 3+3 octahedron. These structures suggest a bond-interchange model, where a sequence of small displacements of Sb atoms accompanied by interchanges of short and long bonds is the origin of the rapid crystallization of a-AIST. It differs profoundly from crystallization in a-GST.

Origins of hole doping and relevant optoelectronic properties of wide gap p-type semiconductor, LaCuOSe.

LaCuOSe is a wide band gap (∼2.8 eV) semiconductor with unique optoelectronic properties, including room-temperature stable excitons, high hole mobility ∼8 cm(2)/(Vs), and the capability of high-density hole doping (up to 1.7 × 10(21) cm(-3) using Mg). Moreover, its carrier transport and doping behaviors exhibit nonconventional results, e.g., the hole concentration increases with decreasing temperature and the high hole doping does not correlate with other properties such as optical absorption. Herein, secondary ion mass spectroscopy and photoemission spectroscopy reveal that aliovalent ion substitution of Mg at the La site is not the main source of hole doping and the Fermi level does not shift even in heavily doped LaCuOSe:Mg. As the hole concentration increases, the subgap optical absorption becomes more intense, but the increase in intensity does not correlate quantitatively. Transmission electron microscopy indicates that planar defects composed of Cu and Se deficiencies are easily created in LaCuOSe. These observations can be explained via the existence of a degenerate low-mobility layer and formation of complex Cu and Se vacancy defects with the assistance of generalized gradient approximation band calculations.

Valence transition of YbInCu4 observed in hard X-ray photoemission spectra.

Yb 3d and valence-band photoemission spectra of the first-order valence-transition compound YbInCu4 have been measured with hard x ray at an excitation energy of 5.95 keV. Abrupt changes are clearly observed in both spectra around the transition temperature T(V)=42 K, in comparison with ultraviolet and soft x-ray photoemission (VUV-PES and SX-PES) spectra. From the Yb 3d spectra, the Yb valence has been estimated to be approximately 2.90 from 220 down to 50 K and approximately 2.74 at 30-10 K. We propose that Yb 3d hard x-ray photoemission spectroscopy is a very powerful method to estimate the valence of Yb with high accuracy. On the other hand, the Yb2+ 4f-derived peaks in the valence-band spectra exhibit a remarkable enhancement below T(V). The shape of the valence-band spectra is different from those of the VUV-PES and SX-PES spectra above T(V), reflecting the In 5s and 5p contributions.