ABSTRACT
In this paper, we review the suitability of diamond as a semiconductor material for high-performance electronic applications. The current status of the manufacture of synthetic diamond is reviewed and assessed. In particular, we consider the quality of intrinsic material now available and the challenges in making doped structures suitable for practical devices. Two practical applications are considered in detail. First, the development of high-voltage switches capable of switching voltages in excess of 10 kV. Second, the development of diamond MESFETs for high-frequency and high-power applications. Here device data are reported showing a current density of more than 30 mA mm(-1) along with small-signal RF measurements demonstrating gigahertz operation. We conclude by considering the remaining challenges which will need to be overcome if commercially attractive diamond electronic devices are to be manufactured.
ABSTRACT
High-power lasers can be used to induce ionization of gases and thereby enable rapid triggering of electrical discharge devices, potentially faster than any devices based on mechanical or solid-state switching. With diffractive optical elements (DOEs) the laser light can conveniently be directed to positions within the gas so that an electrical discharge between two high-voltage electrodes is triggered reliably and rapidly. Here we report on two different types of DOE used for creating an electrical discharge in pure argon for potential high-voltage applications. One is the diffractive equivalent of a conventional axicon that yields an extended, and continuous, high-intensity focal region between the electrodes. The other is a multiple-focal-distance kinoform--a DOE that is designed to produce a linear array of 20 discrete foci, with high peak intensities, between the electrodes. We show that DOEs enable efficient, rapid switching and may provide increased flexibility in the design of novel electrode configurations.
