A CMOS-integrated terahertz near-field sensor based on an ultra-strongly coupled meta-atom.

Recently, plasmonic-based sensors operating in the terahertz frequency range have emerged as perspective tools for rapid and efficient label-free biosensing applications. In this work, we present a fully electronic approach allowing us to achieve state-of-the-art sensitivity by utilizing a near-field-coupled electronic sensor. We demonstrate that the proposed concept enables the efficient implementation and probing of a so-called ultra-strongly coupled sub-wavelength meta-atom as well as a single resonant circuit, allowing to limit the volume of material under test down to a few picoliter range. The sensor has been monolithically integrated into a cost-efficient silicon-based CMOS technology. Our findings are supported by both numerical and analytical models and validated through experiments. They lay the groundwork for near-future developments, outlining the perspectives for a terahertz microfluidic lab-on-chip dielectric spectroscopy sensor.

Note: Photoluminescence excitation measurements in the 1.1-1.6 µm spectral range.

Pressure-tuned laser diodes are used for photoluminescence excitation in quantum-well samples grown on InP. With two bent-waveguide, external cavity lasers, the spectral range from 1.1 to 1.6 µm can be covered. This range is important for telecommunication devices, for quantum-dot emitters etc. while it is inaccessible to solid-state tunable lasers or dye lasers.

Photoluminescence excitation measurements using pressure-tuned laser diodes.

Pressure-tuned laser diodes in external cavity were used as tunable sources for photoluminescence excitation (PLE) spectroscopy. The method was demonstrated in the 720 nm-1070 nm spectral range using a few commercial laser diodes. The samples for PLE measurements were quantum-well structures grown on GaAs and on InP. The method is superior to standard PLE measurements using titanium sapphire laser because it can be extended to any spectral range where anti-reflection coated laser diodes are available.

Pressure tuning of laser diodes in the near-infrared up to 1850 nm: operational characteristics and reliability studies.

Wavelength tuning of infrared laser diodes in the high-hydrostatic pressure setup is demonstrated and its reliability is discussed in detail. Major reliability issues concern the photochemical reactions on the laser facet and the presence of strong absorption bands above 1650 nm in typical pressure liquids that do not undergo phase transitions up to 20 kbar. Despite these difficulties spectrally wide-range pressure tuning can be achieved with sufficient reliability for spectroscopic applications.