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1.
Wittmer et al. reply.
Wittmer M; Fahey P; Scilla GJ; Iyer SS.
Phys Rev Lett ; 71(6): 948, 1993 Aug 09.
Article in English | MEDLINE | ID: mdl-10055409
2.
Raman spectroscopy of long-range order in epitaxial Si0.5Ge0.5 alloys.
Tsang JC; Kesan VP; Freeouf JL; LeGoues FK; Iyer SS.
Phys Rev B Condens Matter ; 46(11): 6907-6914, 1992 Sep 15.
Article in English | MEDLINE | ID: mdl-10002394
3.
Localized and nonlocalized states in thin Ge layers grown by molecular-beam epitaxy at low temperatures.
Tsang JC; Freeouf JL; Iyer SS.
Phys Rev B Condens Matter ; 46(12): 7755-7764, 1992 Sep 15.
Article in English | MEDLINE | ID: mdl-10002515
4.
Influence of surface reconstructions and epitaxial-growth conditions on long-range order in Si1-xGex alloys.
Kesan VP; LeGoues FK; Iyer SS.
Phys Rev B Condens Matter ; 46(3): 1576-1581, 1992 Jul 15.
Article in English | MEDLINE | ID: mdl-10003802
5.
Silicide formation and dopant diffusion in silicon.
Wittmer M; Fahey P; Cotte J; Iyer SS; Scilla GJ.
Phys Rev B Condens Matter ; 45(19): 11383-11386, 1992 May 15.
Article in English | MEDLINE | ID: mdl-10001076
6.
Probing band structure anisotropy in quantum wells via magnetotunneling.
Gennser U; Kesan VP; Syphers DA; Smith TP; Iyer SS; Yang ES.
Phys Rev Lett ; 67(27): 3828-3831, 1991 Dec 30.
Article in English | MEDLINE | ID: mdl-10044836
7.
Novel diffusion phenomenon of dopants in silicon at low temperatures.
Wittmer M; Fahey P; Scilla GJ; Iyer SS; Tejwani M.
Phys Rev Lett ; 66(5): 632-635, 1991 Feb 04.
Article in English | MEDLINE | ID: mdl-10043859
8.
Surface-stress-induced order in SiGe alloy films.
LeGoues FK; Kesan VP; Iyer SS; Tersoff J; Tromp R.
Phys Rev Lett ; 64(17): 2038-2041, 1990 Apr 23.
Article in English | MEDLINE | ID: mdl-10041561
9.
Long-range order in thick, unstrained Si0.5Ge0.5 epitaxial layers.
LeGoues FK; Kesan VP; Iyer SS.
Phys Rev Lett ; 64(1): 40-43, 1990 Jan 01.
Article in English | MEDLINE | ID: mdl-10041268
10.
Spectroscopic ellipsometry of E1-like transitions in nanometer-thickness Ge layers.
Freeouf JL; Tsang JC; LeGoues FK; Iyer SS.
Phys Rev Lett ; 64(3): 315-318, 1990 Jan 15.
Article in English | MEDLINE | ID: mdl-10041949
11.
Localized electronic states and resonant Raman scattering from localized and quasiresonant phonons in Si-Ge layers.
Tsang JC; Iyer SS; Calise JA; Ek BA.
Phys Rev B Condens Matter ; 40(8): 5886-5889, 1989 Sep 15.
Article in English | MEDLINE | ID: mdl-9992648
12.
Nonlocal resonant optical phonons and the local properties of ultrathin Ge layers on Si(100).
Tsang JC; Iyer SS; Pukite P; Copel M.
Phys Rev B Condens Matter ; 39(18): 13545-13548, 1989 Jun 15.
Article in English | MEDLINE | ID: mdl-9948266
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