Asymmetric Response of Ferroelastic Domain-Wall Motion under Applied Bias.

The switching of domains in ferroelectric and multiferroic materials plays a central role in their application to next-generation computer systems, sensing applications, and memory storage. A detailed understanding of the response to electric fields and the switching behavior in the presence of complex domain structures and extrinsic effects (e.g., defects and dislocations) is crucial for the design of improved ferroelectrics. In this work, in situ transmission electron microscopy is coupled with atomistic molecular dynamics simulations to explore the response of 71° ferroelastic domain walls in BiFeO3 with various orientations under applied electric-field excitation. We observe that 71° domain walls can have intrinsically asymmetric responses to opposing biases. In particular, when the electric field has a component normal to the domain wall, forward and backward domain-wall velocities can be dramatically different for equal and opposite fields. Additionally, the presence of defects and dislocations can strongly affect the local switching behaviors through pinning or nucleation of the domain walls. These results offer insight for controlled ferroelastic domain manipulation via electric-field engineering.

Observation of self-assembled core-shell structures in epitaxially embedded TbErAs nanoparticles.

Self-assembled core-shell structured rare-earth nanoparticles (TbErAs) are observed in a III-V semiconductor host matrix (In0.53Ga0.47As) nominally lattice-matched to InP, grown via molecular beam epitaxy. Atom probe tomography demonstrates that the TbErAs nanoparticles have a core-shell structure, as seen both in the tomographic atom-by-atom reconstruction and concentration profiles. A simple thermodynamic model is created to determine when it is energetically favorable to have core-shell structures; the results strongly agree with the observations.

Real-time observation of local strain effects on nonvolatile ferroelectric memory storage mechanisms.

We use in situ transmission electron microscopy to directly observe, at high temporal and spatial resolution, the interaction of ferroelectric domains and dislocation networks within BiFeO3 thin films. The experimental observations are compared with a phase field model constructed to simulate the dynamics of domains in the presence of dislocations and their resulting strain fields. We demonstrate that a global network of misfit dislocations at the film-substrate interface can act as nucleation sites and slow down domain propagation in the vicinity of the dislocations. Networks of individual threading dislocations emanating from the film-electrode interface play a more dramatic role in pinning domain motion. These dislocations may be responsible for the domain behavior in ferroelectric thin-film devices deviating from conventional Kolmogorov-Avrami-Ishibashi dynamics toward a Nucleation Limited Switching model.