Cost-effective silicon-photonic biosensors using doped silicon detectors and a broadband source.

We propose and demonstrate a cost-effective, microring-based, silicon photonic sensor that uses doped silicon detectors and a broadband source. Shifts in the sensing microring resonances are electrically tracked by a doped second microring, which acts as both a tracking element and a photodetector. By tracking the power supplied to this second ring, as the sensing ring's resonance shifts, the effective refractive index change caused by the analyte is determined. This design reduces the cost of the system by eliminating high-cost, high-resolution tunable lasers, and is fully compatible with high-temperature fabrication processes. We report a bulk sensitivity of 61.8 nm/RIU and a system limit of detection of 9.8x10-4 RIU.

Emulation of deep-ultraviolet lithography using rapid-prototyping, electron-beam lithography for silicon photonics design.

We demonstrate a method to emulate the optical performance of silicon photonic devices fabricated using advanced deep-ultraviolet lithography (DUV) processes on a rapid-prototyping electron-beam lithography process. The method is enabled by a computational lithography predictive model generated by processing SEM image data of the DUV lithography process. We experimentally demonstrate the emulation method's accuracy on integrated silicon Bragg grating waveguides and grating-based, add-drop filter devices, two devices that are particularly susceptible to DUV lithography effects. The emulation method allows silicon photonic device and system designers to experimentally observe the effects of DUV lithography on device performance in a low-cost, rapid-prototyping, electron-beam lithography process to enable a first-time-right design flow.

Enhanced poling and infiltration for highly efficient electro-optic polymer-based Mach-Zehnder modulators.

An ultra-narrow 40-nm slotted waveguide is fabricated to enable highly efficient, electro-optic polymer modulators. Our measurement results indicate that VπL's below ∼ 1.19 V.mm are possible for the balanced Mach-Zehnder modulators using this ultra-narrow slotted waveguide on a hybrid silicon-organic hybrid platform. Our simulations suggest that VπL's can be further reduced to ∼ 0.35 V.mm if appropriate doping is utilized. In addition to adapting standard recipes, we developed two novel fabrication processes to achieve miniaturized devices with high modulation sensitivity. To boost compactness and decrease the overall footprint, we use a fabrication approach based on air bridge interconnects on thick, thermally-reflowed, MaN 2410 E-beam resist protected by an alumina layer. To overcome the challenges of high currents and imperfect infiltration of polymers into ultra-narrow slots, we use a carefully designed, atomically-thin layer of TiO2 as a carrier barrier to enhance the efficiency of our electro-optic polymers. The anticipated increase in total capacitance due to the TiO2 layer is negligible. Applying our TiO2 surface treatment to the ultra-narrow slot allows us to obtain an improved index change efficiency (∂n/∂V) of ∼ 22% for a 5 nm TiO2 layer. Furthermore, compared to non-optimized cases, our peak measured current during poling is reduced by a factor of ∼ 3.

Contra-directional pump reject filters integrated with a micro-ring resonator photon-pair source in silicon.

High coincidence-to-accidental ratio (CAR) is crucial for photon-pair sources (PPSs) integrated with pump reject filters (PRFs) in silicon, but CAR values currently reported for integrated PPS/PRF chips still fall short of those achieved using stand-alone sources with external PRFs. Here we report measured and modelled CAR values for a micro-ring resonator PPS integrated with a PRF consisting of a three-stage, cascaded (via their through ports), contra-directional coupler (CDC) that compare favorably even with some stand-alone sources. CDC-based PRFs provide the benefits of compact area and wide reject bands without a need for tuning, in comparison to prior-art implementations.

Broadband, silicon photonic, optical add-drop filters with 3 dB bandwidths up to 11 THz: publisher's note.

This publisher's note contains corrections to Opt. Lett.46, 2738 (2021)OPLEDP0146-959210.1364/OL.423745.

Broadband, silicon photonic, optical add-drop filters with 3 dB bandwidths up to 11 THz.

We present the designs, theory, and experimental demonstrations of ultra-broadband, optical add-drop filters on the silicon-on-insulator platform, realized using period-chirped contra-directional couplers. Our fabricated devices have ultra-broad 3 dB bandwidths of up to 11 THz (88.1 nm), with flat-top responses at their drop ports. All of our devices were fabricated using a commercial, CMOS-compatible, 193 nm deep-ultraviolet lithography process. By using lithography-prediction models, the measured bandwidths, insertion losses, central wavelengths, and extinction ratios of our devices are all in good agreement with our predicted, simulated results. Such filters are necessary for photonic integrated circuits to operate over multiple optical bands.

Sub-wavelength grating-assisted polarization splitter-rotators for silicon-on-insulator platforms: erratum.

An erratum is presented to correct the caption of Fig. 1 and the citation number in Fig. 7(d) in the original article [Opt. Express 27, 17581 (2019)].

Measuring on-chip waveguide losses using a single, two-point coupled microring resonator.

We demonstrate a method for measuring on-chip waveguide losses using a single microring resonator with a tunable coupler. By tuning the power coupling to the microring and measuring the microring's through-port transmission at each power coupling, one can separate the waveguide propagation loss and the effects of the coupling to the microring. This method is tolerant of fiber-chip coupling/alignment errors and does not require the use of expensive instruments for phase response measurements. In addition, this method offers a compact solution for measuring waveguide propagation losses, only using a single microring (230 µm×190 µm, including the metal pads). We demonstrate this method by measuring the propagation losses of silicon-on-insulator rib waveguides, yielding propagation losses of 3.1-1.3 dB/cm for core widths varying from 400-600 nm.

Automated control algorithms for silicon photonic polarization receiver.

We demonstrate greedy linear descent-based, basic gradient descent-based, two-point step size gradient descent-based, and two-stage optimization method-based automated control algorithms and examine their performance for use with a silicon photonic polarization receiver. With an active feedback loop control process, time-varying arbitrary polarization states from an optical fiber can be automatically adapted and stabilized to the transverse-electric (TE) mode of a single-mode silicon waveguide. Using the proposed control algorithms, we successfully realize automated adaptations for a 10 Gb/s on-off keying signal in the polarization receiver. Based on the large-signal measurement results, the control algorithms are examined and compared with regard to the iteration number and the output response. In addition, we implemented a long-duration experiment to track, adapt, and stabilize arbitrary input polarization states using the two-point step size gradient descent-based and two-stage optimization method-based control algorithms. The experimental results show that these control algorithms enable the polarization receiver to achieve real-time and continuous polarization management.

Compact wavelength- and bandwidth-tunable microring modulator.

Fabrication errors currently hold back the large-scale adoption of silicon micro-ring modulators (MRMs). The ability to correct their spectral features post-fabrication is required to enable their commercialization. Here, we report and demonstrate an MRM that uses a tunable two-point coupling scheme, which maintains the MRM's compact footprint (60 µm×45 µm) and allows one to tune the MRM's operating wavelength and adjust the optical bandwidth (and/or extinction ratio). This means that one can compensate for fabrication errors and thereby improve the yields. We confirm the modulator's operation by showing NRZ and PAM-4 modulation, up to 28 Gb/s and 19.9 Gb/s, respectively. Also, the proposed tunable MRM maintains the microring's free-spectral range (FSR), which proves its compatibility for configurable and high-bandwidth DWDM applications.

Sub-wavelength grating-assisted polarization splitter-rotators for silicon-on-insulator platforms.

We propose and demonstrate broadband, entirely mode-evolution-based, polarization splitter-rotators (PSR) using sub-wavelength grating (SWG) assisted adiabatic waveguides for two SOI platforms. Our PSRs are more compact than previously demonstrated entirely mode-evolution-based designs. The devices were fabricated using two fabrication processes and, in both cases, the measured spectra show close matches to the simulation results. One of the processes uses standard optical lithography and, hence, this is the first time that an SWG-based PSR has been experimentally implemented using such a process. Finally, measurements for arbitrary input polarizations on an active, automated polarization receiver, that uses one of our PSRs, are also presented.

Narrow-band, polarization-independent, transmission filter in a silicon-on-insulator strip waveguide.

We report on a narrow-band, polarization-independent, transmission filter using phase-shifted, polarization-rotating Bragg gratings (PRBGs) in a silicon-on-insulator strip waveguide. In our device, phase-shifted PRBGs provide narrow transmission peaks for the transverse electric (TE) and transverse magnetic (TM) modes, both at the same wavelength. We present results for a 330.6 µm long device that has transmission peaks centered at 1556.36 nm, 3 dB bandwidths of 0.26 nm, and extinction ratios of 19 dB for both TE and TM modes. We also integrated a heater onto our device and obtained a wavelength tuning efficiency of 0.028 nm/mW for both TE and TM modes.

Compact, silicon-on-insulator, series-cascaded, contradirectional-coupling-based filters with >50 dB adjacent channel isolation.

In this work, we present optical add/drop multiplexer (OADM) filters for coarse wavelength-division-multiplexing (CWDM) systems with high sidelobe suppressions that result in high adjacent channel isolations (Ai). The filters are realized by using a compact, series-cascaded configuration of apodized, contradirectional-coupling-based filters. We experimentally demonstrate a device with a measured Ai of 53 dB (these devices hold the promise of achieving even higher Ais). While having large Ais, our devices have the wide bandwidths and low insertion losses required for CWDM applications. In addition, our demonstrated OADM has a nearly constant group delay, which results in low dispersion in the passband.

Bandwidth-tunable, FSR-free, microring-based, SOI filter with integrated contra-directional couplers.

A silicon-on-insulator (SOI), bandwidth (BW)-tunable, free-spectral-range (FSR)-free, microring resonator (MRR)-based filter is experimentally demonstrated. The device achieves an FSR-free response at its through and drop ports by using a grating-assisted coupler in one coupling region of the MRR and achieves a non-adjacent channel isolation, (nAi), for 400 GHz WDM, greater than 26.7 dB. A thermally tunable Mach-Zehnder Interferometer-based coupling scheme is also utilized to compensate for fabrication variations and enable the BW tunability of the filter. The BW of the filter can be continuously tuned from 25 to 60 GHz while maintaining an nAi greater than 26.7 dB.

Ultra-broadband 2 × 2 adiabatic 3 dB coupler using subwavelength-grating-assisted silicon-on-insulator strip waveguides.

We report on a compact, ultra-broadband, 2×2 adiabatic 3 dB coupler using silicon-on-insulator (SOI) strip waveguides assisted by sub-wavelength gratings (SWGs). In our device, two tapered SWG-assisted SOI strip waveguides achieve an adiabatic mode evolution of the two lowest-order transverse electric modes, in a two-waveguide system, for broadband 3 dB power splitting. Theory predicts that the proposed coupler will operate from 1200 nm to 1700 nm. We have been able to measure the performance of a device with a 15 µm long mode evolution region that achieves even, broadband power splitting over the 185 nm wavelength range of our tunable laser with an imbalance of less than ±0.3 dB and with low average excess losses of <0.11 dB.

Optimized sensitivity of Silicon-on-Insulator (SOI) strip waveguide resonator sensor.

Evanescent field sensors have shown promise for biological sensing applications. In particular, Silicon-on-Insulator (SOI)-nano-photonic based resonator sensors have many advantages for lab-on-chip diagnostics, including high sensitivity for molecular detection and compatibility with CMOS foundries for high volume manufacturing. We have investigated the optimum design parameters within the fabrication constraints of Multi-Project Wafer (MPW) foundries that result in the highest sensitivity for a resonator sensor. We have demonstrated the optimum waveguide thickness needed to achieve the maximum bulk sensitivity with SOI-based resonator sensors to be 165 nm using the quasi-TM guided mode. The closest thickness offered by MPW foundry services is 150 nm. Therefore, resonators with 150 nm thick silicon waveguides were fabricated resulting in sensitivities as high as 270 nm/RIU, whereas a similar resonator sensor with a 220 nm thick waveguide demonstrated sensitivities of approximately 200 nm/RIU.

Compact broadband polarization beam splitter using a symmetric directional coupler with sinusoidal bends.

We design and demonstrate a compact broadband polarization beam splitter (PBS) using a symmetric directional coupler with sinusoidal bends on a silicon-on-insulator platform. The sinusoidal bends in our PBS suppress the power exchange between two parallel symmetric strip waveguides for the transverse-electric (TE) mode, while allowing for the maximum power transfer to the adjacent waveguide for the transverse-magnetic (TM) mode. Our PBS has a nominal coupler length of 8.55 µm, and it has an average extinction ratio (ER) of 12.0 dB for the TE mode, an average ER of 20.1 dB for the TM mode, an average polarization isolation (PI) of 20.6 dB for the through port, and an average PI of 11.5 dB for the cross port, all over a bandwidth of 100 nm.

FSR-free silicon-on-insulator microring resonator based filter with bent contra-directional couplers.

High-speed optical interconnects drive the need for compact microring resonators (MRRs) with wide free spectral ranges (FSRs). A silicon-on-insulator MRR based filter with bent contra-directional couplers that exhibits an FSR-free response, at both the drop and through ports, while achieving a compact footprint is both theoretically and experimentally demonstrated. Also, using bent contra-directional couplers in the couping regions of MRRs allowed us to achieve larger side-mode suppressions than MRRs with straight CDCs. The fabricated filter has a minimum suppression ratio of more than 15 dB, a 3dB-bandwidth of ~23 GHz, an extinction ratio of ~18 dB, and a drop-port insertion loss of ~1 dB. High-speed data transmission through our filter is also demonstrated at data rates of 12.5 Gbps, 20 Gbps, and 28 Gbps.

Broadband 2 × 2 adiabatic 3 dB coupler using silicon-on-insulator sub-wavelength grating waveguides.

We report on a compact, broadband, 2×2 adiabatic 3 dB coupler using sub-wavelength gratings (SWGs) for silicon-on-insulator waveguides. In our device, two SWG waveguides that support two transverse electric modes and have tapered waveguide widths were used to achieve an adiabatic mode evolution of the two-waveguide system for broadband 3 dB power splitting. We present results for a SWG adiabatic 3 dB coupler that has an overall coupler length of 50 µm and achieves broadband power splitting over a 130 nm wavelength range with an imbalance of no greater than ±0.3 dB and with low excess losses of less than 0.5 dB.

Effects of backscattering in high-Q, large-area silicon-on-insulator ring resonators.

We demonstrate large-area silicon-on-insulator ring resonators with Q values of about 2×106 at critical coupling and 3.6×106 for heavily undercoupled conditions. A model has been developed to understand the impact of waveguide backscattering and subcomponent imperfections on the spectral response of our devices. The model predicts the appearance of signals at ports that would not have them under backscattering-free, ideal-power-splitting conditions. The predictions of our model are shown to match the phenomena observed in our measurements.