ABSTRACT
The spin-orbit torque (SOT) that arises from materials with large spin-orbit coupling promises a path for ultralow power and fast magnetic-based storage and computational devices. We investigated the SOT from magnetron-sputtered BixSe(1-x) thin films in BixSe(1-x)/Co20Fe60B20 heterostructures by using d.c. planar Hall and spin-torque ferromagnetic resonance (ST-FMR) methods. Remarkably, the spin torque efficiency (θS) was determined to be as large as 18.62 ± 0.13 and 8.67 ± 1.08 using the d.c. planar Hall and ST-FMR methods, respectively. Moreover, switching of the perpendicular CoFeB multilayers using the SOT from the BixSe(1-x) was observed at room temperature with a low critical magnetization switching current density of 4.3 × 105 A cm-2. Quantum transport simulations using a realistic sp3 tight-binding model suggests that the high SOT in sputtered BixSe(1-x) is due to the quantum confinement effect with a charge-to-spin conversion efficiency that enhances with reduced size and dimensionality. The demonstrated θS, ease of growth of the films on a silicon substrate and successful growth and switching of perpendicular CoFeB multilayers on BixSe(1-x) films provide an avenue for the use of BixSe(1-x) as a spin density generator in SOT-based memory and logic devices.
ABSTRACT
The large spin-orbit coupling in topological insulators results in helical spin-textured Dirac surface states that are attractive for topological spintronics. These states generate an efficient spin-orbit torque on proximal magnetic moments. However, memory or logic spin devices based upon such switching require a non-optimal three-terminal geometry, with two terminals for the writing current and one for reading the state of the device. An alternative two-terminal device geometry is now possible by exploiting the recent discovery of the unidirectional spin Hall magnetoresistance in heavy metal/ferromagnet bilayers and unidirectional magnetoresistance in magnetic topological insulators. Here, we report the observation of such unidirectional magnetoresistance in a technologically relevant device geometry that combines a topological insulator with a conventional ferromagnetic metal. Our devices show a figure of merit (magnetoresistance per current density per total resistance) that is more than twice as large as the highest reported values in all-metal Ta/Co bilayers.
ABSTRACT
Three-dimensional (3D) topological insulators are known for their strong spin-orbit coupling (SOC) and the existence of spin-textured surface states that might be potentially exploited for "topological spintronics." Here, we use spin pumping and the inverse spin Hall effect to demonstrate successful spin injection at room temperature from a metallic ferromagnet (CoFeB) into the prototypical 3D topological insulator Bi2Se3. The spin pumping process, driven by the magnetization dynamics of the metallic ferromagnet, introduces a spin current into the topological insulator layer, resulting in a broadening of the ferromagnetic resonance (FMR) line width. Theoretical modeling of spin pumping through the surface of Bi2Se3, as well as of the measured angular dependence of spin-charge conversion signal, suggests that pumped spin current is first greatly enhanced by the surface SOC and then converted into a dc-voltage signal primarily by the inverse spin Hall effect due to SOC of the bulk of Bi2Se3. We find that the FMR line width broadens significantly (more than a factor of 5) and we deduce a spin Hall angle as large as 0.43 in the Bi2Se3 layer.
Subject(s)
Bismuth/chemistry , Selenium/chemistry , Surface PropertiesABSTRACT
The utilization of spin waves as eigenmodes of the magnetization dynamics for information processing and communication has been widely explored recently due to its high operational speed with low power consumption and possible applications for quantum computations. Previous proposals of spin wave Mach-Zehnder devices were based on the spin wave phase, a delicate entity which can be easily disrupted. Here, we propose a complete logic system based on the spin wave amplitude utilizing the nonreciprocal spin wave behavior excited by microstrip antennas. The experimental data reveal that the nonreciprocity of magnetostatic surface spin wave can be tuned by the bias magnetic field. Furthermore, engineering of the device structure could result in a high nonreciprocity factor for spin wave logic applications.
ABSTRACT
Current induced spin-orbit torques have been studied in ferromagnetic nanowires made of 20 nm thick Co/Pd multilayers with perpendicular magnetic anisotropy. Using Hall voltage and lock-in measurements, it is found that upon injection of an electric current both in-plane (Slonczewski-like) and perpendicular (fieldlike) torques build up in the nanowire. The torque efficiencies are found to be as large as 1.17 and 5 kOe at 10(8) A/cm2 for the in-plane and perpendicular components, respectively, which is surprisingly comparable to previous studies in ultrathin (â¼1 nm) magnetic bilayers. We show that this result cannot be explained solely by spin Hall effect induced torque at the outer interfaces, indicating a probable contribution of the bulk of the Co/Pd multilayer.
