Ba4RuMn2O10: A Noncentrosymmetric Polar Crystal Structure with Disordered Trimers.

Phase-pure polycrystalline Ba4RuMn2O10 was prepared and determined to adopt the noncentrosymmetric polar crystal structure (space group Cmc21) based on results of second harmonic generation, convergent beam electron diffraction, and Rietveld refinements using powder neutron diffraction data. The crystal structure features zigzag chains of corner-shared trimers, which contain three distorted face-sharing octahedra. The three metal sites in the trimers are occupied by disordered Ru/Mn with three different ratios: Ru1:Mn1 = 0.202(8):0.798(8), Ru2:Mn2 = 0.27(1):0.73(1), and Ru3:Mn3 = 0.40(1):0.60(1), successfully lowering the symmetry and inducing the polar crystal structure from the centrosymmetric parent compounds Ba4T3O10 (T = Mn, Ru; space group Cmca). The valence state of Ru/Mn is confirmed to be +4 according to X-ray absorption near-edge spectroscopy. Ba4RuMn2O10 is a narrow bandgap (∼0.6 eV) semiconductor exhibiting spin-glass behavior with strong magnetic frustration and antiferromagnetic interactions.

Large-Area Growth of Ferroelectric 2D γ-In2 Se3 Semiconductor by Spray Pyrolysis for Next-Generation Memory.

In2 Se3 , 2D ferroelectric-semiconductor, is a promising candidate for next-generation memory device because of its outstanding electrical properties. However, the large-area manufacturing of In2 Se3 is still a big challenge. In this work, spray pyrolysis technique is introduced for the growth of large-area In2 Se3 thin film. A polycrystalline γ-In2 Se3 layer can be grown on 15 cm × 15 cm glasss at the substrate temperature of 275 °C. The In2 Se3 ferroelectric-semiconductor field effect transistor (FeS-FET) on glass substrate demonstrates a large hysteresis window of 40.3 V at the ±40 V of gate voltage sweep and excellent uniformity. The FeS-FET exhibits an electron field effect mobility of 0.97 cm2 V-1 s-1 and an on/off current ratio of >107 in the transfer curves. The memory behavior of the large-area, In2 Se3 FeS-FETs for next-generation memory is demonstrated.

Synergetic Enhancement of Quantum Yield and Exciton Lifetime of Monolayer WS2 by Proximal Metal Plate and Negative Electric Bias.

The efficiency of light emission is a critical performance factor for monolayer transition metal dichalcogenides (1L-TMDs) for photonic applications. While various methods have been studied to compensate for lattice defects to improve the quantum yield (QY) of 1L-TMDs, exciton-exciton annihilation (EEA) is still a major nonradiative decay channel for excitons at high exciton densities. Here, we demonstrate that the combined use of a proximal Au plate and a negative electric gate bias (NEGB) for 1L-WS2 provides a dramatic enhancement of the exciton lifetime at high exciton densities with the corresponding QY enhanced by 30 times and the EEA rate constant decreased by 80 times. The suppression of EEA by NEGB is attributed to the reduction of the defect-assisted EEA process, which we also explain with our theoretical model. Our results provide a synergetic solution to cope with EEA to realize high-intensity 2D light emitters using TMDs.

Temperature Dependence of Excitonic Auger Recombination in Excitonic-Complex-Free Monolayer WS2 by Considering Auger Broadening and Generation Efficiency.

Monolayer transition metal dichalcogenides (TMDs) have been extensively studied for their optoelectronic properties and applications. However, even at moderate exciton densities, their light-emitting capability is severely limited by Auger-type exciton-exciton annihilation (EEA). Previous work on EEA used oversimplified models in the presence of excitonic complexes, resulting in seriously underestimated values for the Auger coefficient. In this work, we transferred monolayer WS2 on a gold substrate with hBN encapsulation, where excitons persist as the main species at 3-300 K via metal proximity. We numerically solved the rate equation for excitons to accurately determine the Auger coefficient as a function of temperature by considering laser pulse width and spatially inhomogeneous exciton distribution. We found that the Auger coefficient consists of temperature-dependent and independent terms, consistent with a theoretical model for direct and exchange processes, respectively. We believe that our results provide a guide for enhancing the luminescence quantum yield of TMDs.

Negative Valley Polarization of the Intralayer Exciton via One-Step Growth of H-Type Heterobilayer WS2/MoS2.

Vertical type II van der Waals heterobilayers of transition metal dichalcogenides (TMDs) have attracted wide attention due to their distinctive features mostly arising from the emergence of intriguing electronic structures that include moiré-related phenomena. Owing to strong spin-orbit coupling under a noncentrosymmetric environment, TMD heterobilayers host nonequivalent +K and -K valleys of contrasting Berry curvatures, which can be optically controlled by the helicity of optical excitation. The corresponding valley selection rules are well established by not only intralayer excitons but also interlayer excitons. Quite intriguingly, here, we experimentally demonstrate that unusual valley switching can be achieved using the lowest-lying intralayer excitons in H-type heterobilayer WS2/MoS2 prepared by one-step growth. This TMD combination provides an ideal case for interlayer coupling with an almost perfect lattice match, thereby also in the momentum space between +K and -K valleys in the H-type heterostructure. The underlying valley-switching mechanism can be understood by bright-to-dark conversion of initially created electrons in the valley of WS2, followed by interlayer charge transfer to the opposite valley in MoS2. Our suggested model is also confirmed by the absence of valley switching when the lowest-lying excitons in MoS2 are directly generated in the heterobilayer. In contrast to the H-type case, we show that no valley switching is observed from R-type heterobilayers prepared by the same method, where interlayer charge transfer does not occur between the opposite valleys. We compare the case with the series of valley polarization data from other heterobilayer combinations obtained under different excitation energies and temperatures. Our valley switching mechanism can be utilized for valley manipulation by controlling the excitation photon energy together with the photon helicity in valleytronic devices derived from H-type TMD heterobilayers.

Ba3.5Cu7.55In1.15Se9: A Wide-Bandgap Copper Indium Selenide Reveals Strong Luminescence and Third-Harmonic Generation.

A new copper indium selenide, Ba3.5Cu7.55In1.15Se9, was synthesized by the KBr flux reaction at 800 °C. The compound crystallizes with orthorhombic Pnma, a = 46.1700(12) Å, b = 4.26710(10) Å, c = 19.8125(5) Å, and Z = 8. The structural framework mainly consists of four sites of cubane-type defective M4Se3 (M = Cu, Cu/In) units with disordered Cu+/In3+ ions present at the part corner of each unit. The single crystal emits intense photoluminescence at 657 nm with a relative quantum yield (RQY) 0.2 times that of rhodamine 6G powder. The compound belongs to a direct band gap at 1.91 eV, analyzed by Tauc's plot, and the energy is close to the PL position. The Hall effect measurement on a pressed pellet reveals an n-type conductivity with a carrier concentration of 3.358 × 1017 cm-3 and a mobility of 24.331 cm2 V-1 s-1. Furthermore, the compound produces a strong nonlinear third-harmonic generation (THG), with an χS(3) value of 1.3 × 105 pm2/V2 comparable to 1.6 × 105 pm2/V2 for AgGaSe2 measured at 800 nm.

Multifunctional Cu2TSiS4 (T = Mn and Fe): Polar Semiconducting Antiferromagnets with Nonlinear Optical Properties.

Cu2TSiS4 (T = Mn and Fe) polycrystalline and single-crystal materials were prepared with high-temperature solid-state and chemical vapor transport methods, respectively. The polar crystal structure (space group Pmn21) consists of chains of corner-sharing and distorted CuS4, Mn/FeS4, and SiS4 tetrahedra, which is confirmed by Rietveld refinement using neutron powder diffraction data, X-ray single-crystal refinement, electron diffraction, energy-dispersive X-ray spectroscopy, and second harmonic generation (SHG) techniques. Magnetic measurements indicate that both compounds order antiferromagnetically at 8 and 14 K, respectively, which is supported by the temperature-dependent (100-2 K) neutron powder diffraction data. Additional magnetic reflections observed at 2 K can be modeled by magnetic propagation vectors k = (1/2,0,1/2) and k = (1/2,1/2,1/2) for Cu2MnSiS4 and Cu2FeSiS4, respectively. The refined antiferromagnetic structure reveals that the Mn/Fe spins are canted away from the ac plane by about 14°, with the total magnetic moments of Mn and Fe being 4.1(1) and 2.9(1) µB, respectively. Both compounds exhibit an SHG response with relatively modest second-order nonlinear susceptibilities. Density functional theory calculations are used to describe the electronic band structures.

Crystal structure, electronic structure, and optical properties of the novel Li4CdGe2S7, a wide-bandgap quaternary sulfide with a polar structure derived from lonsdaleite.

The novel quaternary thiogermanate Li4CdGe2S7 (tetralithium cadmium digermanium heptasulfide) was discovered from a solid-state reaction at 750 °C. Single-crystal X-ray diffraction data were collected and used to solve and refine the structure. Li4CdGe2S7 is a member of the small, but growing, class of I4-II-IV2-VI7 diamond-like materials. The compound adopts the Cu5Si2S7 structure type, which is a derivative of lonsdaleite. Crystallizing in the polar space group Cc, Li4CdGe2S7 contains 14 crystallographically unique ions, all residing on general positions. Like all diamond-like structures, the compound is built of corner-sharing tetrahedral units that create a relatively dense three-dimensional assembly. The title compound is the major phase of the reaction product, as evidenced by powder X-ray diffraction and optical diffuse reflectance spectroscopy. While the compound exhibits a second-harmonic generation (SHG) response comparable to that of the AgGaS2 (AGS) reference material in the IR region, its laser-induced damage threshold (LIDT) is over an order of magnitude greater than AGS for λ = 1.064 µm and τ = 30 ps. Bond valence sums, global instability index, minimum bounding ellipsoid (MBE) analysis, and electronic structure calculations using density functional theory (DFT) were used to further evaluate the crystal structure and electronic structure of the compound and provide a comparison with the analogous I2-II-IV-VI4 diamond-like compound Li2CdGeS4. Li4CdGe2S7 appears to be a better IR nonlinear optical (NLO) candidate than Li2CdGeS4 and one of the most promising contenders to date. The exceptional LIDT is likely due, at least in part, to the wider optical bandgap of ∼3.6 eV.

Heteroanionic Control of Exemplary Second-Harmonic Generation and Phase Matchability in 1D LiAsS2-xSex.

The isostructural heteroanionic compounds ß-LiAsS2-xSex (x = 0, 0.25, 1, 1.75, 2) show a positive correlation between selenium content and second-harmonic response and greatly outperform the industry standard AgGaSe2. These materials crystallize in the noncentrosymmetric space group Cc as one-dimensional 1/∞ [AsQ2]- (Q = S, Se, S/Se) chains consisting of corner-sharing AsQ3 trigonal pyramids with charge-balancing Li+ atoms interspersed between the chains. LiAsS2-xSex melts congruently for 0 ≤ x ≤ 1.75, but when the Se content exceeds x = 1.75, crystallization is complicated by a phase transition. This behavior is attributed to the ß- to α-phase transition present in LiAsSe2, which is observed in the Se-rich compositions. The band gap decreases with increasing Se content, starting at 1.63 eV (LiAsS2) and reaching 1.06 eV (ß-LiAsSe2). Second-harmonic generation measurements as a function of wavelength on powder samples of ß-LiAsS2-xSex show that these materials exhibit significantly higher nonlinearity than AgGaSe2 (d36 = 33 pm/V), reaching a maximum of 61.2 pm/V for LiAsS2. In comparison, single-crystal measurements for LiAsSSe yielded a deff = 410 pm/V. LiAsSSe, LiAsS0.25Se1.75, and ß-LiAsSe2 show phase-matching behavior for incident wavelengths exceeding 3 µm. The laser-induced damage thresholds from two-photon absorption processes are on the same order of magnitude as AgGaSe2, with S-rich materials slightly outperforming AgGaSe2 and Se-rich materials slightly underperforming AgGaSe2.

Observation of 3D Biexcitons in Pristine-Quality CH3 NH3 PbBr3 Single Crystals.

Halide perovskites (HPs) are fascinating materials whose optoelectronic properties are arguably excitonic. In the HP family, biexcitons are known to exist only in low dimensions where exciton-exciton binding is strongly enhanced by quantum and dielectric confinements. In this paper, however, it is shown that they indeed do exist in 3D bulk CH3 NH3 PbBr3 (MAPbBr3 ) single crystals if the pristine crystal quality is ensured for subtle binding of two excitons. The existence of biexcitons is clearly evidenced below 30 K with a binding energy of ≈3.9 ± 0.3 meV according to i) exciton-biexciton population dynamics, ii) giant resonant two-photon excitation of biexcitons, iii) inverted Boltzmann-type spectral feature, and iv) zero degree of circular polarization in the biexciton photoluminescence. Because of the polariton effect, the two-photon resonance occurs at the excited biexciton state from which longitudinal-transverse splitting is calculated to be 3.7 meV. The discovery of the 3D biexcitons underscores the very quality of HP crystals for generating various many-body excitonic phases in MAPbBr3 and its analogues toward the improved understanding of their fundamental properties and highly efficient optoelectronic applications.

Boosting quantum yields in two-dimensional semiconductors via proximal metal plates.

Monolayer transition metal dichalcogenides (1L-TMDs) have tremendous potential as atomically thin, direct bandgap semiconductors that can be used as convenient building blocks for quantum photonic devices. However, the short exciton lifetime due to the defect traps and the strong exciton-exciton interaction in TMDs has significantly limited the efficiency of exciton emission from this class of materials. Here, we show that exciton-exciton interaction in 1L-WS2 can be effectively screened using an ultra-flat Au film substrate separated by multilayers of hexagonal boron nitride. Under this geometry, induced dipolar exciton-exciton interaction becomes quadrupole-quadrupole interaction because of effective image dipoles formed within the metal. The suppressed exciton-exciton interaction leads to a significantly improved quantum yield by an order of magnitude, which is also accompanied by a reduction in the exciton-exciton annihilation (EEA) rate, as confirmed by time-resolved optical measurements. A theoretical model accounting for the screening of the dipole-dipole interaction is in a good agreement with the dependence of EEA on exciton densities. Our results suggest that fundamental EEA processes in the TMD can be engineered through proximal metallic screening, which represents a practical approach towards high-efficiency 2D light emitters.

Impact of Dark Excitons on the Population and Relaxation Kinetics of Two-Dimensional Biexcitons in [CH3(CH2)3NH3]2Pb1-xMnxBr4 (x = 0-0.09).

Two-dimensional (2D) semiconductors have emerged as an excellent platform for studying various excitonic matter under strong quantum and dielectric confinements. However, such effects can be seriously overestimated for Coulomb binding of two excitons to form a biexciton by a naive interpretation of the corresponding photoluminescence (PL) spectrum. By using 2D halide perovskite single crystals of [CH3(CH2)3NH3]2Pb1-xMnxBr4 (x = 0-0.09) as a model system, we investigated both population and relaxation kinetics of biexcitons as a function of excitation density, temperature, polarization, and Mn doping. We show that the biexciton is formed by binding of two dark excitons, which are partially bright, but they radiatively recombine to yield a bright exciton in the final state. This renders the spectral distance between the exciton peak and the biexciton peak as very different from the actual biexciton binding energy (ϕ) because of large bright-dark splitting. We show that Mn doping introduces paramagnetism to our 2D system and improves the biexciton stability as evidenced by increase in ϕ from 18.8 ± 0.7 to 20.0 ± 0.7 meV and the increase of the exciton-exciton capture coefficient C from 2.4 × 10-11 to 4.3 × 10-11cm2/ns within our doping range. The precisely determined ϕ values are significantly smaller than the previously reported ones, but they are consistent with the instability of the biexciton against thermal dissociation at room temperature. Our results demonstrate that electron-hole exchange interaction must be considered for precisely locating the biexciton level; therefore, the ϕ values should be reassessed for other 2D halide perovskites that even do not exhibit any dark exciton PL.

Selective Deposition of Candle Soot on a Cellulose Membrane for Efficient Solar Evaporation.

Owing to their natural abundance, seawater together with sunlight has a potential to meet the global challenges in terms of water scarcity and energy crisis. Herein, we demonstrate a solar vapor generator composed of an inner flame candle soot (IFCS) deposited on a cellulose filter paper (FP) prepared by a simple two-step process. The resultant IFCS/FP device exhibits a high photothermal conversion ability owing to the broadband solar absorption of the IFCS layer along with the multiple scattering of the incoming sunlight in the porous microstructure of the cellulose FP. Additionally, the low thermal conductivity of the IFCS effectively localizes the photothermally generated heat at the IFCS/FP surface, thereby significantly suppressing the conduction heat losses to the underlying bulk water. Meanwhile, the capillary action of the FP supplies an adequate amount of water to the heated surface for accelerating the evaporation process. Benefitting from the synergistic effect of these characteristics, the IFCS/FP achieves high evaporation rates of ∼1.16 and ∼4.09 kg m-2 h-1 and their corresponding efficiencies of ∼75.1 and 90.9% under one and three sun illumination, respectively. Moreover, the IFCS/FP device presents an excellent longevity owing to the persistent performance over 15 repeated cycles under one and three sun illumination. Hence, the facile fabrication, fine mechanical strength, desalination, and the salt-resistance ability of our IFCS/FP make it a suitable candidate for practical applications.

Cu4MnGe2S7 and Cu2MnGeS4: two polar thiogermanates exhibiting second harmonic generation in the infrared and structures derived from hexagonal diamond.

The new, quaternary diamond-like semiconductor (DLS) Cu4MnGe2S7 was prepared at high-temperature from a stoichiometric reaction of the elements under vacuum. Single crystal X-ray diffraction data were used to solve and refine the structure in the polar space group Cc. Cu4MnGe2S7 features [Ge2S7]6- units and adopts the Cu5Si2S7 structure type that can be considered a derivative of the hexagonal diamond structure. The DLS Cu2MnGeS4 with the wurtz-stannite structure was similarly prepared at a lower temperature. The achievement of relatively phase-pure samples, confirmed by X-ray powder diffraction data, was nontrival as differential thermal analysis shows an incongruent melting behaviour for both compounds at relatively high temperature. The dark red Cu2MnGeS4 and Cu4MnGe2S7 compounds exhibit direct optical bandgaps of 2.21 and 1.98 eV, respectively. The infrared (IR) spectra indicate potentially wide windows of optical transparency up to 25 µm for both materials. Using the Kurtz-Perry powder method, the second-order nonlinear optical susceptibility, χ(2), values for Cu2MnGeS4 and Cu4MnGe2S7 were estimated to be 16.9 ± 2.0 pm V-1 and 2.33 ± 0.86 pm V-1, respectively, by comparing with an optical-quality standard reference material, AgGaSe2 (AGSe). Cu2MnGeS4 was found to be phase matchable at λ = 3100 nm, whereas Cu4MnGe2S7 was determined to be non-phase matchable at λ = 1600 nm. The weak SHG response of Cu4MnGe2S7 precluded phase-matching studies at longer wavelengths. The laser-induced damage threshold (LIDT) for Cu2MnGeS4 was estimated to be ∼0.1 GW cm-2 at λ = 1064 nm (pulse width: τ = 30 ps), while the LIDT for Cu4MnGe2S7 could not be ascertained due to its weak response. The significant variance in NLO properties can be reasoned using the results from electronic structure calculations.

Selective Growth and Robust Valley Polarization of Bilayer 3R-MoS2.

Noncentrosymmetric transition-metal dichalcogenides, particularly their 3R polymorphs, provide a robust setting for valleytronics. Here, we report on the selective growth of monolayers and bilayers of MoS2, which were acquired from two closely but differently oriented substrates in a chemical vapor deposition reactor. It turns out that as-grown bilayers are predominantly 3R-type, not more common 2H-type, as verified by microscopic and spectroscopic characterization. As expected, the 3R bilayer showed a significantly higher valley polarization compared with the centrosymmetric 2H bilayer, which undergoes efficient interlayer scattering across contrasting valleys because of their vertical alignment of the K and K' points in momentum space. Interestingly, the 3R bilayer showed even higher valley polarization compared with the monolayer counterpart. Moreover, the 3R bilayer reasonably maintained its valley efficiency over a very wide range of excitation power density from ∼0.16 kW/cm2 to ∼0.16 MW/cm2 at both low and room temperatures. These observations are rather surprising because valley dephasing could be more efficient in the bilayer via both interlayer and intralayer scatterings, whereas only intralayer scattering is allowed in the monolayer. The improved valley polarization of the 3R bilayer can be attributed to its indirect-gap nature, where valley-polarized excitons can relax into the valley-insensitive band edge, which otherwise scatter into the contrasting valley to effectively cancel out the initial valley polarization. Our results provide a facile route for the growth of 3R-MoS2 bilayers that could be utilized as a platform for advancing valleytronics.

Structure Tuning, Strong Second Harmonic Generation Response, and High Optical Stability of the Polar Semiconductors Na1-xKxAsQ2.

The mixed cation compounds Na1-xKxAsSe2 (x = 0.8, 0.65, 0.5) and Na0.1K0.9AsS2 crystallize in the polar noncentrosymmetric space group Cc. The AAsQ2 (A = alkali metals, Q = S, Se) family features one-dimensional (1D) 1/∞[AQ2-] chains comprising corner-sharing pyramidal AQ3 units in which the packing of these chains is dependent on the alkali metals. The parallel 1/∞[AQ2-] chains interact via short As···Se contacts, which increase in length when the fraction of K atoms is increased. The increase in the As···Se interchain distance increases the band gap from 1.75 eV in γ-NaAsSe2 to 2.01 eV in Na0.35K0.65AsSe2, 2.07 eV in Na0.2K0.8AsSe2, and 2.18 eV in Na0.1K0.9AsS2. The Na1-xKxAsSe2 (x = 0.8, 0.65) compounds melt congruently at approximately 316 °C. Wavelength-dependent second harmonic generation (SHG) measurements on powder samples of Na1-xKxAsSe2 (x = 0.8, 0.65, 0.5) and Na0.1K0.9AsS2 suggest that Na0.2K0.8AsSe2 and Na0.1K0.9AsS2 have the highest SHG response and exhibit significantly higher laser-induced damage thresholds (LIDTs). Theoretical SHG calculations on Na0.5K0.5AsSe2 confirm its SHG response with the highest value of d33 = 22.5 pm/V (χ333(2) = 45.0 pm/V). The effective nonlinearity for a randomly oriented powder is calculated to be deff = 18.9 pm/V (χeff(2) = 37.8 pm/V), which is consistent with the experimentally obtained value of deff = 16.5 pm/V (χeff(2) = 33.0 pm/V). Three-photon absorption is the dominant mechanism for the optical breakdown of the compounds under intense excitation at 1580 nm, with Na0.2K0.8AsSe2 exhibiting the highest stability.

Highly Efficient Solar Vapor Generation via a Simple Morphological Alteration of TiO2 Films Grown on a Glassy Carbon Foam.

Effectively utilizing eco-friendly solar energy for desalination and wastewater purification has immense potential to overcome the global water crisis. Herein, we demonstrate a highly efficient solar vapor generator (SVG) developed via a simple morphological alteration, from a two-dimensional (2D) TiO2 film (TF) to one-dimensional (1D) TiO2 nanorods (TNRs) grown on a glassy carbon foam (CF). Given that evaporation is primarily a surface physical phenomenon, the 1D morphology of TNRs provides a higher evaporation surface area compared to their 2D counterpart. Additionally, the superhydrophilic nature of TNRs ensures an adequate supply of water to the evaporation surface via effective capillary action. Consequently, the 1D TNRs properly utilize photothermal heat, which results in a significant reduction in the convection heat loss. Owing to the synergistic effect of these characteristics, TNRs/CF acquires a high evaporation rate of ∼2.23 kg m-2 h-1 and an energy utilization efficiency of ∼67.1% under one sun irradiation. Moreover, the excellent stability, desalination, self-cleaning capabilities, and the facile fabrication method make TNRs/CF suitable for cost-effective, large-scale device application.

Simultaneous Enhancement of Charge Separation and Hole Transportation in a W:α-Fe2O3/MoS2 Photoanode: A Collaborative Approach of MoS2 as a Heterojunction and W as a Metal Dopant.

In this study, a facile approach has been successfully applied to synthesize a W-doped Fe2O3/MoS2 core-shell electrode with unique nanostructure modifications for photoelectrochemical performance. A two-dimensional (2D) structure of molybdenum disulfide (MoS2) and tungsten (W)-doped hematite (W:α-Fe2O3) overcomes the drawbacks of the α-Fe2O3 and MoS2 semiconductor through simple and facile processes to improve the photoelectrochemical (PEC) performance. The highest photocurrent density of the 0.5W:α-Fe2O3/MoS2 photoanode is 1.83 mA·cm-2 at 1.23 V vs reversible hydrogen electrode (RHE) under 100 mW·cm2 illumination, which is higher than those of 0.5W:α-Fe2O3 and pure α-Fe2O3 electrodes. The overall water splitting was evaluated by measuring the H2 and O2 evolution, which after 2 h of irradiation for 0.5W:α-Fe2O3/MoS2 was determined to be 49 and 23.8 µmol.cm-2, respectively. The optimized combination of the heterojunction and metal doping on pure α-Fe2O3 (0.5W:α-Fe2O3/MoS2 photoanode) showed an incident photon-to-electron conversion efficiency (IPCE) of 37% and an applied bias photon-to-current efficiency (ABPE) of 26%, which are around 5.2 and 13 times higher than those of 0.5W:α-Fe2O3, respectively. Moreover, the facile fabrication strategy can be easily extended to design other oxide/carbon-sulfide/oxide core-shell materials for extensive applications.

Role of the A-Site Cation in Low-Temperature Optical Behaviors of APbBr3 (A = Cs, CH3NH3).

APbBr3 (A = Cs, CH3NH3) are prototype halide perovskites having bandgaps of 2.30-2.35 eV at room temperature, rendering their apparent color nearly identical (bright orange but opaque). Upon optical excitation, they emit bright photoluminescence (PL) arising from carrier recombination whose spectral features are also similar. At 10 K, however, the apparent color of CsPbBr3 becomes transparent yellow, whereas that of CH3NH3PbBr3 does not change significantly due to the presence of an indirect Rashba gap. With increasing the excitation level, evolution of the PL spectra, which are excitonic at 10 K, reveals the emergence of P-band emission arising from inelastic exciton-exciton scattering. Based on the spectral location of the P-band, exciton binding energies are determined to be 21.6 ± 2.0 and 38.3 ± 3.0 meV for CsPbBr3 and CH3NH3PbBr3, respectively. Intriguingly, upon further increase in the exciton density, electron-hole plasma appears in CsPbBr3 as evidenced by both red-shift and broadening of the PL. This phase, however, does not occur in CH3NH3PbBr3 presumably due to polaronic effects. Although the A-site cation is believed not to directly impact optical properties of APbBr3, our results underscore its critical role, which destines different high-density phases and apparent color at low temperatures.

Static Rashba Effect by Surface Reconstruction and Photon Recycling in the Dynamic Indirect Gap of APbBr3 (A = Cs, CH3NH3) Single Crystals.

Recently, halide perovskites have gained significant attention from the perspective of efficient spintronics owing to the Rashba effect. This effect occurs as a consequence of strong spin-orbit coupling under a noncentrosymmetric environment, which can be dynamic and/or static. However, there exist intense debates on the origin of broken inversion symmetry since the halide perovskites typically crystallize into a centrosymmetric structure. In order to clarify the issue, we examine both dynamic and static effects in the all-inorganic CsPbBr3 and organic-inorganic CH3NH3PbBr3 (MAPbBr3) perovskite single crystals by employing temperature- and polarization-dependent photoluminescence excitation spectroscopy. The perovskite single crystals manifest the dynamic effect by photon recycling in the indirect Rashba gap, causing dual peaks in the photoluminescence. However, the effect vanishes in CsPbBr3 at low temperatures (<50 K) accompanied by a striking color change of the crystal, arising presumably from lower degrees of freedom for inversion symmetry breaking associated with the thermal motion of the spherical Cs cation compared with the polar MA cation in MAPbBr3. We also show that the static Rashba effect occurs only in MAPbBr3 below 90 K, presumably due to surface reconstruction via MA-cation ordering, which likely extends across a few layers from the crystal surface to the interior. We further demonstrate that this static Rashba effect can be completely suppressed upon surface treatment with polymethyl methacrylate (PMMA) coating. We believe that our results provide a rationale for the Rashba effects in halide perovskites.