Initial Optimization of the Growth Conditions of GaAs Homo-Epitaxial Layers after Cleaning and Restarting the Molecular Beam Epitaxy Reactor.

The molecular beam epitaxy (MBE) technique is renowned as the most suitable for the growth of high-quality crystalline materials and nanostructures such as GaAs. However, once established, optimal growth parameters required for repeatability of top-quality structures may be easily lost as MBE is highly sensitive to any changes in the system. Especially, routine servicing procedures, which include any activity which requires unsealing of the growth chamber, are devastating for developed growth parameters and force the necessity of recalibration. In this work, we present the process of growth parameter pre-optimization for obtaining homoepitaxial GaAs layers after servicing and restarting the MBE system. Namely, we present how each step of reestablishing optimal growth condition influences various characteristics of obtained GaAs layers. Those include in situ, structural, and spectral measurement techniques. An additional aspect was to compare the optimal conditions for the growth of homoepitaxial GaAs layers from two growth campaigns in which the main difference is the addition of an ion pump and increasing the temperature gradient on the Ga cell.

Strain-Balanced InAs/AlSb Type-II Superlattice Structures Growth on GaSb Substrate by Molecular Beam Epitaxy.

We demonstrate strain-balanced InAs/AlSb type-II superlattices (T2SL) grown on GaSb substrates employing two kinds of interfaces (IFs): AlAs-like IF and InSb-like IF. The structures are obtained by molecular beam epitaxy (MBE) for effective strain management, simplified growth scheme, improved material crystalline quality, and improved surface quality. The minimal strain T2SL versus GaSb substrate can be achieved by a special shutters sequence during MBE growth that leads to the formation of both interfaces. The obtained minimal mismatches of the lattice constants is smaller than that reported in the literature. The in-plane compressive strain of 60-period InAs/AlSb T2SL 7ML/6ML and 6ML/5ML was completely balanced by the applied IFs, which is confirmed by the HRXRD measurements. The results of the Raman spectroscopy (measured along the direction of growth) and surface analyses (AFM and Nomarski microscopy) of the investigated structures are also presented. Such InAs/AlSb T2SL can be used as material for a detector in the MIR range and, e.g., as a bottom n-contact layer as a relaxation region for a tuned interband cascade infrared photodetector.

Polar and Non-Polar Zn1-xMgxO:Sb Grown by MBE.

The article presents a systematic study of Sb-doped Zn1-xMgxO layers, with various concentrations of Mg, that were successfully grown by plasma-assisted MBE on polar a- and c-oriented and non-polar r-oriented sapphire substrates. X-ray diffraction confirmed the polar c-orientation of alloys grown on c-and a-oriented sapphire and non-polar structures grown on r-oriented substrates. A uniform depth distribution of the Sb dopant at level of 2 × 1020 cm-3 was determined by SIMS measurements. Raman spectroscopy revealed the presence of Sb-related modes in all samples. It also showed that Mg alloying reduces the compressive strain associated with Sb doping in ZnO. XPS analysis indicates that the chemical state of Sb atoms in ZnMgO is 3+, suggesting a substitutional position of SbZn, probably associated with two VZn vacancies. Luminescence and transmission spectra were measured to determine the band gaps of the Zn1-xMgxO layers. The band gap energies extracted from the transmittance measurements differ slightly for the a, c, and r substrate orientations, and the differences increase with increasing Mg content, despite identical growth conditions. The differences between the energy gaps, determined from transmission and PL peaks, are closely correlated with the Stokes shift and increase with the Mg content in the analyzed series of ZnMgO layers.

Optical Measurements and Theoretical Modelling of Excitons in Double ZnO/ZnMgO Quantum Wells in an Internal Electric Field.

In this paper, the photoluminescence spectra of excitons in ZnO/ZnMgO/ZnO double asymmetric quantum wells grown on a-plane Al2O3 substrates with internal electric-field bands structures were studied. In these structures, the electron and the hole in the exciton are spatially separated between neighbouring quantum wells, by a ZnMgO barrier with different thickness. The existence of an internal electric field generates a linear potential and, as a result, lowers the energy of quantum states in the well. For the wide wells, the electrons are spatially separated from the holes and can create indirect exciton. To help the understanding of the photoluminescence spectra, for single particle states the 8 k·p for wurtzite structure is employed. Using these states, the exciton in the self-consistent model with 2D hydrogenic 1s-like wave function is calculated.

Phase-transition critical thickness of rocksalt MgxZn1-xO layers.

The rocksalt structure of ZnO has a very promising bandgap for optoelectronic applications. Unfortunately, this high-pressure phase is unstable under ambient conditions. This paper presents experimental results for rocksalt-type ZnO/MgO superlattices and theoretical considerations of the critical thickness of MgxZn1-xO layers. The correlations between the layer/spacer thickness ratio, elastic strain, chemical composition, and critical thickness are analyzed. The Matthews and Blakeslee model is revisited to find analytic conditions for the critical layer thickness resulting in phase transition. Our analysis shows that due to the decrease in misfit stresses below some critical limit, the growth of multiple quantum wells composed of rocksalt ZnO layers and MgO spacers is possible only for very large layer/spacer thickness ratios.

Growth and optical properties of ZnO/Zn1-xMgxO quantum wells on ZnO microrods.

While synthesis methods for pure ZnO nanostructures are well established, an efficient technique for the growth of ZnO-based nanowires or microrods that incorporate any type of quantum structure is yet to be established. Here, we report on the fabrication and optical properties of axial Zn1-xMgxO/ZnO/Zn1-xMgxO quantum wells that were deposited by molecular beam epitaxy on ZnO microrods obtained using a hydrothermal method. Using the emission energy results found in cathodoluminescence measurements and the results of a numerical modeling process, we found the quantum well width to be 4 nm, as intended, at the growth stage. The emission of quantum well-confined excitons persists up to room temperature. We used the fabricated structures to determine the carrier diffusion length (>280 nm) in ZnO using spatially resolved cathodoluminescence. The micro-photoluminescence results suggest an increase in the electron-phonon coupling strength with increasing microrod size.