ABSTRACT
The nature of intrinsic and impurity point defects in lead zirconate titanate (PZT) ceramics has been explored. Using electron paramagnetic resonance (EPR), nuclear magnetic resonance (NMR), and X-ray photoelectron spectroscopy (XPS) methods, several impurity sites have been identified in the materials, including the Fe(3+)-oxygen vacancy (VO) complex and Pb ions. Both of these centers are incorporated into the PZT lattice. The Fe(3+) VÐ paramagnetic complex serves as a sensitive probe of the local crystal field in the ceramic; the symmetry of this defect roughly correlates with PZT phase diagram as the composition is varied from PbTiO3 to PbZrO3. NMR spectra (207)Pb in PbTiO3, PbZrO3, and PZT with iron content from 0 to 0.4 wt% showed that increasing the iron concentration leads to a distortion of the crystal structure and to improvement of the electrophysical parameters of the piezoceramics. This is due to the formation of a phase which has a higher symmetry, but at high concentrations of iron (>0.4 wt%), it leads to sharp degradation of electrophysical parameters.
ABSTRACT
Optical index of refraction n is studied by spectroscopic ellipsometry in epitaxial nanofilms of NaNbO3 with thickness â¼10 nm grown on different single-crystal substrates. The index n in the transparency spectral range (n ≈ 2.1 - 2.2) exhibits a strong sensitivity to atmospheric-pressure gas ambience. The index n in air exceeds that in an oxygen ambience by δn ≈ 0.05 - 0.2. The thermo-optical behaviour n(T) indicates ferroelectric state in the nanofilms. The ambience-sensitive optical refraction is discussed in terms of fundamental connection between refraction and ferroelectric polarization in perovskites, screening of depolarizing field on surfaces of the nanofilms, and thermodynamically stable surface reconstructions of NaNbO3.
ABSTRACT
We report the creation of a functional nanostructure on a Si crystal surface by 200 keV C60(++) cluster ion bombardment (CIB). We found that the modified layer produced by CIB includes two sublayers with different nanostructures. The top 24-nm-thick sublayer is an agglomeration of 5-nm-sized amorphous Si nanodots (a-Si NDs). The deeper 10-nm-thick sublayer is a transient layer of disordered Si as an interface between the a-Si top sublayer and the bulk Si(100). The top a-Si sublayer and the nc-Si transient layer are formed by the local heating effect and shock wave effect, respectively, induced by the cluster ion impacts. The photoluminescence (PL) spectra of the CIB-modified Si samples revealed an emission line centered at a photon energy of 1.92 eV. The absorption spectra of the modified samples exhibit enhanced light absorption at this photon energy. The parameters of the PL line require ascribing the emission origin to the quantum-confinement-induced optical transitions in the a-Si nanodots. The core-shell structure of a-Si NDs is confirmed by detection of an additional PL line centered at 2.5 eV. Analysis of the Rutherford backscattering (RBS) and the PL spectra implies the existence of -Si--O- bonds in the nanodot outer shells, which are responsible for the additional PL line. The obtained results demonstrate the valuable potential of CIB for the controllable fabrication of Si surface nanostructures, which is attractive for optoelectronics and nanoelectronics. The obtained results elucidate the evolution of structure modification occurring in silicon due to the injection of energetic C60 cluster ions with an energy of hundreds of keV.
ABSTRACT
The possibilities of in situ spectroscopic ellipsometry applied to phase transitions investigation in oxide thin films and crystals are examined in this work, along with the use of various parameters calculated from ellipsometric data (band gap energy Eg, refractive index n and surface roughness) together with the directly measured main ellipsometric angles psi and Delta, for the detection of phase transitions. The efficiency of spectroscopic ellipsometry on "surface" phase transition and its sensitivity to surface defects are also demonstrated.
