Ferroelectric control of the magnetocrystalline anisotropy of the Fe/BaTiO(3)(001) interface.

Density-functional calculations are employed to investigate the effect of ferroelectric polarization of BaTiO(3) on the magnetocrystalline anisotropy of the Fe /BaTiO(3)(001) interface. It is found that the interface magnetocrystalline anisotropy energy changes from 1.33 to 1.02 erg cm (-2) when the ferroelectric polarization is reversed. This strong magnetoelectric coupling is explained in terms of the changing population of the Fe 3d orbitals at the Fe/BaTiO(3) interface driven by polarization reversal. Our results indicate that the electronically assisted magnetoelectric effects at the ferromagnetic/ferroelectric interfaces may be a viable alternative to the strain mediated coupling in related heterostructures and the electric field-induced effects on the interface magnetic anisotropy in ferromagnet/dielectric structures.

Asymmetric magnetoresistance in an exchange bias Co/CoO bilayer.

Magnetoresistance (MR) measurements are carried out on a Co(8 nm)/CoO(3.5 nm) bilayer in the exchange bias (EB) state prepared by molecular beam epitaxy. With the applied magnetic field parallel to the current, the EB MR curves show an asymmetric behavior about the minimum, in contrast to the symmetric one for non-EB systems. We generalize a well-known analytical expression used for the field dependence of the MR of paramagnets. Our generalization incorporates coercivity and EB in a new phenomenological MR expression. Excellent fits of the latter to the experimental MR data are achieved, showing the way to use MR techniques for the quantitative characterization of EB systems. Furthermore, the temperature dependence of the EB field obtained from MR loops can be described with a power law, which yields a value of 96.6 K for the EB blocking temperature, which is significantly below the Néel temperature of 293 K for bulk CoO.

Ferroelectric instability under screened Coulomb interactions.

We explore the effect of charge carrier doping on ferroelectricity using density functional calculations and phenomenological modeling. By considering a prototypical ferroelectric material, BaTiO(3), we demonstrate that ferroelectric displacements are sustained up to the critical concentration of 0.11 electron per unit cell volume. This result is consistent with experimental observations and reveals that the ferroelectric phase and conductivity can coexist. Our investigations show that the ferroelectric instability requires only a short-range portion of the Coulomb force with an interaction range of the order of the lattice constant. These results provide a new insight into the origin of ferroelectricity in displacive ferroelectrics and open opportunities for using doped ferroelectrics in novel electronic devices.

Prediction of a switchable two-dimensional electron gas at ferroelectric oxide interfaces.

The demonstration of a quasi-two-dimensional electron gas (2DEG) in LaAlO3/SrTiO3 heterostructures has stimulated intense research activity in recent years. The 2DEG has unique properties that are promising for applications in all-oxide electronic devices. For such applications it is desirable to have the ability to control 2DEG properties by external stimulus. Here, based on first-principles calculations we predict that all-oxide heterostructures incorporating ferroelectric constituents, such as KNbO3/ATiO3 (A=Sr, Ba, Pb), allow creating a 2DEG switchable between two conduction states by ferroelectric polarization reversal. The effect occurs due to the screening charge at the interface that counteracts the depolarizing electric field and depends on polarization orientation. The proposed concept of ferroelectrically controlled interface conductivity offers the possibility to design novel electronic devices.

Interface effect on ferroelectricity at the nanoscale.

Interfaces play a critical role in nanoscale ferroelectricity. We perform a first-principles study of ultrathin KNbO(3) ferroelectric films placed between two metal electrodes, either SrRuO(3) or Pt. We show that bonding at the ferroelectric-metal interfaces imposes severe constraints on the displacement of atoms, destroying the bulk tetragonal soft mode. If the interface bonding is sufficiently strong, the ground-state represents a ferroelectric domain with an interface domain wall, driven by the intrinsic oppositely oriented dipole moments at the two interfaces. The critical thickness for the net polarization of the KNbO(3) film is predicted to be about 1 nm for Pt and 1.8 nm for SrRuO(3) electrodes.