ABSTRACT
We discuss here the development of a Langmuir probe (LP) diagnostic to examine high-density, high-temperature inhomogeneous plasmas such as those that can be created at the University of Rochester's Laboratory for Laser Energetics OMEGA facility. We have configured our diagnostic to examine the velocity of the plasma expanding from the target. We observe velocities of approximately 16-17 cm/µs, with individual LP currents displaying complex structures, perhaps due to the multiple atomic species and ionization states that exist.
ABSTRACT
An existing x-ray source application (XRSA) test cassette was modified to hold multiple x-ray filter materials followed by two radiochromic film types (FWT-60 and HD-810 Gafchromic® film) to qualitatively characterize the spectral-spatial uniformity over the XRSA sample field of view. Multiple sets of film were examined and nominal set was determined. These initial, qualitative measurements suggest a low-energy regime (E < 3 keV) spatial anisotropy and spatial isotropy at higher energies (E > 3 keV).
ABSTRACT
A GaAs-based transistor, analogous to commercial silicon devices, has been fabricated with vapor-deposited cubic GaS as the insulator material. The n-channel, depletion mode, GaAs field-effect transistor shows, in addition to classical transistor characteristics, a channel mobility of 4665.6 square centimeters per volt per second, an interfacial trap density of 10(11) per electron volt per square centimeter, and a transconductance of 7 millisiemens for a 5-micrometer gate length at a gate voltage of 8 volts. Furthermore, the GaAs transistor shows an on-to-off resistance ratio comparable to that of commercial devices.
