ABSTRACT
RATIONALE: Anaphylaxis is a very rare event in pregnancy, triggering maternal hypotension leading to intrapartum hypoxic-ischemic encephalopathy in infant. Furthermore, cesarean sections are performed at a high rate in anaphylactic pregnant women. PATIENT CONCERNS: A 34-year-old pregnant woman presented with maternal anaphylaxis following prophylactic antibiotic injection for cesarean section. Within a few minutes after initiation of intradermal skin test with cefotetan, the pregnant woman developed generalized itchy rash, chest tightness, and dyspnea. DIAGNOSES: Several minutes after the injection of antibiotics, a diffuse urticarial rash was detected over her face and trunk followed by complaints of chest tightness and dyspnea. She was diagnosed with hypotension and hypoxia. Further, fetal heart tones showed bradycardia. A presumptive diagnosis of anaphylactic reaction induced by cefotetan was made for surgical prophylaxis. INTERVENTIONS: The patient was managed for anaphylaxis, via administration of epinephrine, glucocorticoid, and antihistamine. Emergency cesarean section performed under general anesthesia resulted in a favorable perinatal outcome for the fetus. OUTCOMES: Maternal and fetal outcomes were good after prompt treatment for anaphylaxis and emergency cesarean section. LESSONS: This is the first reported case of anaphylaxis following cefotetan administration in pregnancy. Cefotetan, a second-generation cephalosporin, is a commonly prescribed antibiotic used to treat a wide range of bacterial infections. The case demonstrated life-threatening anaphylactic reaction during pregnancy. Even a skin test using antibiotics alone triggered anaphylaxis.
Subject(s)
Anaphylaxis/chemically induced , Anti-Bacterial Agents/adverse effects , Antibiotic Prophylaxis/adverse effects , Cefotetan/adverse effects , Pregnancy Complications/chemically induced , Preoperative Care/adverse effects , Adult , Cesarean Section , Drug Eruptions/etiology , Female , Humans , Pregnancy , Preoperative Care/methodsABSTRACT
Recently, various functional devices based on printing technologies have been of paramount interest, owing to their characteristic processing advantages along with excellent device performance. In particular, printable metallic electrodes have drawn attention in a variety of optoelectronic applications; however, research into printable metallic nanoparticles has been limited mainly to the case of an environmentally stable Ag phase. Despite its earth-abundance and highly conductive nature, the Cu phase, to date, has not been exploited as an ambient atmosphere-processable, printable material due to its critical oxidation problem in air. In this study, we demonstrate a facile route for generating highly conductive, flexible Cu electrodes in air by introducing the well-optimized photonic sintering at a time frame of 10(-3) s, at which the photon energy, rather than conventional thermal energy, is instantly provided. It is elucidated here how the surface oxide-free, printed Cu particulate films undergo chemical structural/microstructural evolution depending on the instantly irradiated photon energy, and a successful demonstration is provided of large-area, flexible, printed Cu conductors on various substrates, including polyimide (PI), polyethersulfone (PES), polyethylene terephthalate (PET), and paper. The applicability of the resulting printed Cu electrodes is evaluated via implementation into both flexible capacitor devices and indium-gallium-zinc oxide (IGZO) flexible thin-film transistors.
ABSTRACT
In this study, for high-performance indium-free metal oxide channel layer, we synthesize Zn-Sn-O (ZTO) precursor solutions in which formamide is incorporated as an additive for catalyzing the subsequent sol-gel reactions and the evolution of chemical structure. It is revealed that the formamide plays a critical chemical role in evolving a chemical structure with more oxygen-deficient oxide lattice and with less hydroxide, allowing for high field-effect mobility over 7 cm(2)/V·s. Furthermore, it is for the first time demonstrated that electrically active metal-oxide films can be patterned, using an air-brush printing technique, by directly depositing formamide-mediated ZTO-precursor solutions in patterned geometries.
ABSTRACT
This paper addressed the effect of gallium nitrate hydrate addition on thin film transistor (TFT) performance and positive bias stability of amorphous zinc tin oxide (ZTO) TFTs by solution processing, Further, the mechanisms responsible for chemical properties and electronic band structure are explored. A broad exothermic peak accompanied by weight loss appeared in the range from about 350 to 570 °C for the ZTO solution; the thermal reaction of the Ga-ZTO:N solution was completed at 520 °C. This is because the gallium nitrate hydrate precursor promoted the decomposition and dehydroxylation reaction for Zn(CH3COO)2·2H2O and/or SnCl2·2H2O precursors. The concentrations of carbon and chloride in gallium nitrate hydrate added ZTO films annealed at 400 °C have a lower value (C 0.65, Cl 0.65 at. %) compared with those of ZTO films (C 3.15, Cl 0.82 at. %). Absorption bands at 416, 1550, and 1350 cm(-1) for GaZTO:N films indicated the presence of ZnGa2O4, N-H, and NâO groups by Fourier transform infrared spectroscopy measurement, respectively. As a result, an inverted staggered Ga-ZTO:N TFT exhibited a mobility of 4.84 cm(2) V(-1) s(-1) in the saturation region, a subthreshold swing of 0.35 V/decade, and a threshold gate voltage (Vth) of 0.04 V. In addition, the instability of Vth values of the ZTO TFTs under positive bias stress conditions was suppressed by adding Ga and N from 13.6 to 3.17 V, which caused a reduction in the oxygen-related defects located near the conduction band.
