ABSTRACT
In this study, the correlation between surface roughness of carbon steel and crystal size of manganese phosphate coatings has been investigated. The microstructure and surface morphology of the coatings were analyzed by SEM, XRD. The surface roughness test was carried out in order to calculate Ra value by atomic force microscopy (AFM). Also, the tribology property of manganese phosphate coating was tested by ball-on disk. XRD showed that (Mn,Fe)5H2(PO4)4·4H2O in manganese phosphate coating layer was formed by the chemical reaction between manganese phosphate and elements in carbon steel. Also, (Mn,Fe)5H2(PO4)4 · 4H2O was observed to be formed in all manganese phosphate conversion coating. With regard to the effects of surface roughness on manganese phosphate coatings, it can be seen that there is an increase of the crystal size on manganese phosphate coating as the surface roughness of carbon steel decreased. The increase of crystal size by the surface roughness had effect on the tribology property and electrochemical property. It was approved that friction coefficient of manganese phosphate coating is remarkably improved as the surface roughness of carbon steel become rough.
ABSTRACT
Transparent flexible fluorine-doped indium zinc oxide (IZO:F) thin-film transistors (TFTs) were demonstrated using the spin-coating method of the metal fluoride precursor aqueous solution with annealing at 200°C for 2â hrs on polyethylene naphthalate films. The proposed thermal evolution mechanism of metal fluoride aqueous precursor solution examined by thermogravimetric analysis and Raman spectroscopy can easily explain oxide formation. The chemical composition analysed by XPS confirms that the fluorine was doped in the thin films annealed below 250°C. In the IZO:F thin films, a doped fluorine atom substitutes for an oxygen atom generating a free electron or occupies an oxygen vacancy site eliminating an electron trap site. These dual roles of the doped fluorine can enhance the mobility and improve the gate bias stability of the TFTs. Therefore, the transparent flexible IZO:F TFT shows a high mobility of up to 4.1â cm(2)/V·s and stable characteristics under the various gate bias and temperature stresses.
