1.
Adv Mater
; 25(39): 5549-54, 2013 Oct 18.
Article
in English
| MEDLINE
| ID: mdl-24038596
ABSTRACT
A gate-modulated nanowire oxide photosensor is fabricated by electron-beam lithography and conventional dry etch processing.. The device characteristics are good, including endurance of up to 10(6) test cycles, and gate-pulse excitation is used to remove persistent photoconductivity. The viability of nanowire oxide phototransistors for high speed and high resolution applications is demonstrated, thus potentially expanding the scope of exploitation of touch-free interactive displays.
2.
Adv Mater
; 24(19): 2631-6, 2012 May 15.
Article
in English
| MEDLINE
| ID: mdl-22499356