Tailoring Contacts for High-Performance 1D Ta2Pt3S8 Field-Effect Transistors.

Materials with van der Waals (vdW) unit structures rely on weak interunit vdW forces, facilitating physical separation and advancing nanomaterial research with remarkable electrical properties. Recently, there has been growing interest in one-dimensional (1D) vdW materials, celebrated for their advantageous properties, characterized by reduced dimensionality and the absence of dangling bonds. In this context, we synthesize Ta2Pt3S8, a 1D vdW material, and assess its suitability for field-effect transistor (FET) applications. Spectroscopic analysis and electrical characterization confirmed that the band gap and work function of Ta2Pt3S8 are 1.18 and 4.77 eV, respectively. Leveraging various electrode materials, we fabricated n-type FETs based on Ta2Pt3S8 and identified Cr as the optimal electrode, exhibiting a high mobility of 57 cm2 V-1 s-1. In addition, we analyzed the electron transport mechanism in n-type FETs by investigating Schottky barrier height, Schottky barrier tunneling width, and contact resistance. Furthermore, we successfully fabricated p-type operating Ta2Pt3S8 FETs using a molybdenum trioxide (MoO3) layer as a high work function contact electrode. Finally, we achieved Ta2Pt3S8 nanowire rectifying diodes by creating a p-n junction with asymmetric contact electrodes of Cr and MoO3, demonstrating an ideality factor of 1.06. These findings highlight the electronic properties of Ta2Pt3S8, positioning it as a promising 1D vdW material for future nanoelectronics and functional vdW-based device applications.

Fabrication of a Field-Effect Transistor Based on 2D Novel Ternary Chalcogenide PdPS.

Two-dimensional (2D) palladium phosphide sulfide (PdPS) has garnered significant attention, owing to its exotic physical properties originating from the distinct Cairo pentagonal tiling topology. Nevertheless, the properties of PdPS remain unexplored, especially for electronic devices. In this study, we introduce the thickness-dependent electrical characteristics of PdPS flakes into fabricated field-effect transistors (FETs). The broad thickness variation of the PdPS flakes, ranging from 0.7-306 nm, is prepared by mechanical exfoliation, utilizing large bulk crystals synthesized via chemical vapor transport. We evaluate this variation and confirm a high electron mobility of 14.4 cm2 V-1 s-1 and Ion/Ioff > 107. Furthermore, the 6.8 nm-thick PdPS FET demonstrates a negligible Schottky barrier height at the gold electrode contact, as evidenced by the measurement of the temperature-dependent transfer characteristics. Consequently, we adjusted the Fowler-Nordheim tunneling mechanism to elucidate the charge-transport mechanism, revealing a modulated mobility variation from 14.4 to 41.2 cm2 V-1 s-1 with an increase in the drain voltage from 1 to 5 V. The present findings can broaden the understanding of the unique properties of PdPS, highlighting its potential as a 2D ternary chalcogenide in future electronic device applications.

Controlled Bipolar Doping of One-Dimensional van der Waals Nb2Pd3Se8.

Tailoring the electrical properties of one-dimensional (1D) van der Waals (vdW) materials is desirable for their applications toward electronic devices by exploiting their unique characteristics. However, 1D vdW materials have not been extensively investigated for modulation of their electrical properties. Here we control doping levels and types of 1D vdW Nb2Pd3Se8 over a wide energy range by immersion in AuCl3 or ß-nicotinamide adenine dinucleotide (NADH) solutions, respectively. Through spectroscopic analyses and electrical characterizations, we confirm that the charges were effectively transferred to Nb2Pd3Se8, and the dopant concentration was adjusted to the immersion time. Furthermore, we make the axial p-n junction of 1D Nb2Pd3Se8 by a selective area p-doping using the AuCl3 solution, which exhibits rectifying behavior with an Iforward/Ireverse of 81 and an ideality factor of 1.2. Our findings could pave the way to more practical and functional electronic devices based on 1D vdW materials.

Novel High Current-Carrying Quasi-1D Material: Nb2 PdS6.

A quasi-one-dimensional van der Waals metallic nanowire Nb2 PdS6 is synthesized, and its electrical characteristics are analyzed. The chemical vapor transport method is applied to produce centimeter-scale Nb2 PdS6 crystals with needle-like structures and X-ray diffraction (XRD) confirms their high crystallinity. Scanning transmission electron microscopy reveals the crystal orientation and atomic arrangement of the specific region with atomic resolution. The electrical properties are examined by delaminating bulk Nb2 PdS6 crystals into a few nanometer-scale wires onto 100 nm-SiO2 /Si substrates using a mechanical exfoliation process. Ohmic behavior is confirmed at the low-field measurements regardless of their thickness variation, and 4.64 nm-thick Nb2 PdS6 shows a breakdown current density (JBD ) of 52 MA cm-2 when the high electrical field is delivered. Moreover, with further exfoliation down to a single atomic chain, the JBD of Nb2 PdS6 is predicted to have a value of 527 MA cm-2 . The breakdown of Nb2 PdS6 proceeds due to the Joule heating mechanism, and the Nb2 PdS6 nanowires are well fitted to the 1D thermal dissipating model.

Liquid Precursor-Assisted Chemical Vapor Deposition of One-Dimensional van der Waals Material Nb2Se9: Tunable Growth for Room-Temperature Gas Sensors.

In this study, Nb2Se9, a one-dimensional (1D) material with van der Waals (vdWs) bonding, was synthesized by chemical vapor deposition (CVD). A liquid precursor was used to overcome the difficulty of controlling the length and density of Nb2Se9 by CVD due to the high melting point of Nb. Growth proceeded horizontally in a nano-ribbon shape on the substrate in the [100] direction, which had the most stable bonding distance, resulting in a preferred orientation of the (010) plane on the out-of-plane axis. Unlike that grown by conventional mechanical or chemical exfoliation, the nanoscale Nb2Se9 grown by CVD was uniform and did not have contaminants, such as dispersants, on its surface, meaning it could effectively induce reactions such as gas adsorption and desorption. It exhibited high sensitivity to NO2 gas adsorption at room temperature (27 °C), and its behavior was confirmed in a high-humidity environment. For the first time, this study demonstrated the possibility of synthesizing a vdWs bonding-based 1D material by CVD, which is expected to be widely used in a variety of low-dimensional materials and devices.

Carrier mobility of one-dimensional vanadium selenide (V2Se9) monolayer and nanoribbon systems: DFT study.

Vanadium selenide (V2Se9) is a true one-dimensional (1D) crystal composed of atomic nanochains bonded by van der Waals (vdW) interactions. Recent experiments revealed the mechanical exfoliation of newly synthesized V2Se9. In this study, we predicted the electronic and transport properties of V2Se9through computational analyses. We calculated the intrinsic carrier mobility of V2Se9monolayers (MLs) and nanoribbons (NRs) using density functional theory and deformation potential theory. We found that the electron mobility of the two-dimensional (2D) (010)-plane ML of V2Se9is highly anisotropic, reachingµ2D,ze=1327cm2V-1s-1across the chain direction. The electron mobility of 1D NR systems in a (010)-plane ML of V2Se9along the chain direction continuously increased as the thickness increased from 1-chain to 4-chain NR (width below 3 nm). Interestingly, the electron mobility of 1D 4-chain NR along the chain direction (µ1D,xe=775cm2V-1s-1) was higher than that of a 2D (010)-plane ML (µ2D,xe=567cm2V-1s-1). These results demonstrate the potential of vdW-1D crystal V2Se9as a new nanomaterial for ultranarrow (sub-3 nm width) optoelectronic devices with high electron mobility.

One-dimensional van der Waals stacked p-type crystal Ta2Pt3Se8 for nanoscale electronics.

Recently, ternary transition metal chalcogenides Ta2X3Se8 (X = Pd or Pt) have attracted great interest as a class of emerging one-dimensional (1D) van der Waals (vdW) materials. In particular, Ta2Pd3Se8 has been actively studied owing to its excellent charge transport properties as an n-type semiconductor and ultralong ballistic phonon transport properties. Compared to subsequent studies on the Pd-containing material, Ta2Pt3Se8, another member of this class of materials has been considerably less explored despite its promising electrical properties as a p-type semiconductor. Herein, we demonstrate the electrical properties of Ta2Pt3Se8 as a promising channel material for nanoelectronic applications. High-quality bulk Ta2Pt3Se8 single crystals were successfully synthesized by a one-step vapor transport reaction. Scanning Kelvin probe microscopy measurements were used to investigate the surface potential difference and work function of the Ta2Pt3Se8 nanoribbons of various thicknesses. Field-effect transistors fabricated on exfoliated Ta2Pt3Se8 nanoribbons exhibited moderate p-type transport properties with a maximum hole mobility of 5 cm2 V-1 s-1 and an Ion/Ioff ratio of >104. Furthermore, the charge transport mechanism of Ta2Pt3Se8 was analyzed by temperature-dependent transport measurements in the temperature range from 90 to 320 K. To include Ta2Pt3Se8 in a building block for modern 1D electronics, we demonstrate p-n junction characteristics using the electron beam doping method.

High Breakdown Current Density in Quasi-1D van der Waals Layered Material Ta2NiSe7.

We synthesized ternary composition chalcogenide Ta2NiSe7, a quasi-one-dimensional (Q1D) material with excellent crystallinity. To utilize the excellent electrical conductivity property of Ta2NiSe7, the breakdown current density (JBD) according to thickness change through mechanical exfoliation was measured. It was confirmed that as the thickness decreased, the maximum breakdown voltage (VBD) increased, and at 18 nm thickness, 35 MA cm-2 of JBD was measured, which was 35 times higher than that of copper, which is commonly used as an interconnect material. By optimization of the exfoliation process, it is expected that through a theoretical model fitting, the JBD can be increased to about 356 MA cm-2. It is expected that the low-dimensional materials with ternary compositions proposed through this experiment can be used as candidates for current-carrying materials that are required for the miniaturization of various electronic devices.

Ta2 Ni3 Se8 : 1D van der Waals Material with Ambipolar Behavior.

In this study, high-purity and centimeter-scale bulk Ta2 Ni3 Se8 crystals are obtained by controlling the growth temperature and stoichiometric ratio between tantalum, nickel, and selenium. It is demonstrated that the bulk Ta2 Ni3 Se8 crystals could be effectively exfoliated into a few chain-scale nanowires through simple mechanical exfoliation and liquid-phase exfoliation. Also, the calculation of electronic band structures confirms that Ta2 Ni3 Se8 is a semiconducting material with a small bandgap. A field-effect transistor is successfully fabricated on the mechanically exfoliated Ta2 Ni3 Se8 nanowires. Transport measurements at room temperature reveal that Ta2 Ni3 Se8 nanowires exhibit ambipolar semiconducting behavior with maximum mobilities of 20.3 and 3.52 cm2 V-1 s-1 for electrons and holes, respectively. The temperature-dependent transport measurement (from 90 to 295 K) confirms the carrier transport mechanism of Ta2 Ni3 Se8 nanowires. Based on these characteristics, the obtained 1D vdW material is expected to be a potential candidate for additional 1D materials as channel materials.

Tuning the electronic properties of highly anisotropic 2D dangling-bond-free sheets from 1D V2Se9 chain structures.

True one-dimensional (1D) van der Waals materials can form two-dimensional (2D) dangling-bond-free anisotropic surfaces. Dangling bonds on surfaces act as defects for transporting charge carriers. In this study, we consider true 1D materials to be V2Se9 chains, and then the electronic structures of 2D sheets composed of true 1D V2Se9 chains are calculated. The (010) plane has indirect bandgap with 0.757 eV (1.768 eV), while the (111̅) plane shows a nearly direct bandgap of 1.047 eV (2.118 eV) for DFT-D3 (HSE06) correction, respectively. The (111̅) plane of V2Se9 is expected to be used in optoelectronic devices because it contains a nearly direct bandgap. Partial charge analysis indicates that the (010) plane exhibits interchain interaction is stronger than the (111̅) plane. To investigate the strain effect, we increased the interchain distance of planes until an indirect-to-direct bandgap transition occurred. The (010) plane then demonstrated a direct bandgap when interchain distance increased by 30%, while the (111̅) plane demonstrated a direct bandgap when the interchain distance increased by 10%. In mechanical sensors, this change in the bandgap was induced by the interchain distance.

Plasticized Polystyrene by Addition of -Diene Based Molecules for Defect-Less CVD Graphene Transfer.

Chemical vapor deposition of graphene on transition metals is the most favored method to get large scale homogenous graphene films to date. However, this method involves a very critical step of transferring as grown graphene to desired substrates. A sacrificial polymer film is used to provide mechanical and structural support to graphene, as it is detached from underlying metal substrate, but, the residue and cracks of the polymer film after the transfer process affects the properties of the graphene. Herein, a simple mixture of polystyrene and low weight plasticizing molecules is reported as a suitable candidate to be used as polymer support layer for transfer of graphene synthesized by chemical vapor deposition (CVD). This combination primarily improves the flexibility of the polystyrene to prevent cracking during the transfer process. In addition, the polymer removal solvent can easily penetrate between the softener molecules, so that the polymer film can be easily dissolved after transfer of graphene, thereby leaving no residue. This facile method can be used freely for the large-scale transfer of 2D materials.

Edge Defect-Free Anisotropic Two-Dimensional Sheets with Nearly Direct Band Gaps from a True One-Dimensional Van der Waals Nb2Se9 Material.

Dangling-bond-free two-dimensional (2D) materials can be isolated from the bulk structures of one-dimensional (1D) van der Waals materials to produce edge-defect-free 2D materials. Conventional 2D materials have dangling bonds on their edges, which act as scattering centers that deteriorate the transport properties of carriers. Highly anisotropic 2D sheets, made of 1D van der Waals Nb2Se9 material, have three planar structures depending on the cutting direction of the bulk Nb2Se9 crystal. To investigate the applications of these 2D Nb2Se9 sheets, we calculated the band structures of the three planar sheets and observed that two sheets had nearly direct band gaps, which were only slightly greater (0.01 eV) than the indirect band gaps. These energy differences were smaller than the thermal energy at room temperature. The 2D Nb2Se9 plane with an indirect band gap had the shortest interchain distance for selenium ions among the three planes and exhibited significant interchain interactions on the conduction band. The interchain strain induced an indirect-to-direct band gap transition in the 2D Nb2Se9 sheets. These 2D sheets of Nb2Se9 with direct band gaps also had different band structures because of different interactions between chains, implying that they can have different charge mobilities. We expect these dangling-bond-free 2D Nb2Se9 sheets to be applied in optoelectronic devices because they allow for nearly direct band gaps. They can also be used in mechanical sensors because the band gaps can be controlled by varying the interchain strain.

Designed growth of porous 2D Nb2O5 with Ag nano-particles for differential detection of UV-A and UV-C.

We demonstrate the differential detection of UV-A (ultra-violet 320-400 nm region) and UV-C (100-280 nm) using porous two-dimensional (2D) Nb2O5 and additional Ag nano-particle decoration. The 2D Nb2O5, which has band-absorption edge near the UV-A zone, was synthesized by thermodynamic conversion of 2D material NbSe2 (Nb2O5 has lower Gibbs formation energy than NbSe2). For the differential detection (to distinguish with UV-C absorption), we decorated the Ag nano-particles on the Nb2O5 surface. By coating Ag nano-particles, we can expect (i) a decrease in the area of light absorption by the Ag-coated area, and (ii) an increase of surface plasmon absorption by Ag nano-particles, especially the UV-A region, resulting in strong intensity ratio change UV-A/UV-C.

Thickness-Dependence Electrical Characterization of the One-Dimensional van der Waals TaSe3 Crystal.

Needle-like single crystalline wires of TaSe3 were massively synthesized using the chemical vapor transport method. Since the wedged-shaped single TaSe3 molecular chains were stacked along the b-axis by weak van der Waals interactions, a few layers of TaSe3 flakes could be easily isolated using a typical mechanical exfoliation method. The exfoliated TaSe3 flakes had an anisotropic planar structure, and the number of layers could be controlled by a repeated peeling process until a monolayer of TaSe3 nanoribbon was obtained. Through atomic force and scanning Kelvin probe microscope analyses, it was found that the variation in the work function with the thickness of the TaSe3 flakes was due to the interlayer screening effect. We believe that our results will not only help to add a novel quasi-1D block for nanoelectronics devices based on 2D van der Waals heterostructures, but also provide crucial information for designing proper contacts in device architecture.

Design of softened polystyrene for crack- and contamination-free large-area graphene transfer.

The fundamental issues related to the formation of mechanical cracks and the chemical residue during the transfer process of large-area CVD graphene by polymeric carrier-films are addressed in this work. This paper presents a method to design a new polymer carrier-film (using polystyrene (PS) and 4,4'-diisopropylbiphenyl (DIPB)) that is free from mechanical cracks and polymer residue during the transfer of large-area graphene from a metal catalyst. This new polymer carrier film shows excellent mechanical flexibility and good solubility in tetrahydrofuran solvent without any residue and it is confirmed that the graphene transfer process is excellent without mechanical destruction even over a large area. Our result gave a technical milestone for the real industrial application of graphene in many application areas (not only graphene but also several two-dimensional materials such as boron nitride, transition metal di-chalcogenide, and black phosphorus).

Exfoliation and Characterization of V2Se9 Atomic Crystals.

Mass production of one-dimensional, V2Se9 crystals, was successfully synthesized using the solid-state reaction of vanadium and selenium. Through the mechanical exfoliation method, the bulk V2Se9 crystal was easily separated to nanoribbon structure and we have confirmed that as-grown V2Se9 crystals consist of innumerable single V2Se9 chains linked by van der Waals interaction. The exfoliated V2Se9 flakes can be controlled thickness by the repeated-peeling method. In addition, atomic thick nanoribbon structure of V2Se9 was also obtained on a 300 nm SiO2/Si substrate. Scanning Kelvin probe microscopy analysis was used to explore the variation of work function depending on the thickness of V2Se9 flakes. We believe that these observations will be of great help in selecting suitable metal contacts for V2Se9 and that a V2Se9 crystal is expected to have an important role in future nano-electronic devices.

Triangular radial Nb2O5 nanorod growth on c-plane sapphire for ultraviolet-radiation detection.

Nb2O5 nanostructures with excellent crystallinities were grown on c-plane sapphire and employed for ultraviolet-(UV)-radiation detection. The triangular radial Nb2O5 grown on the c-sapphire substrate had a 6-fold symmetry with domain matching epitaxy on the substrate. Owing to the radial growth, the nanorods naturally connected when the deposition time increased. This structure can be used as a UV-detector directly by depositing macroscale electrodes without separation of a single nanorod and e-beam lithography process. It was confirmed that electric reactions occur at different UV irradiation wavelengths (254 nm and 365 nm).

Mechanical exfoliation and electrical characterization of a one-dimensional Nb2Se9 atomic crystal.

A novel semiconductor 1D nanomaterial, Nb2Se9, was synthesized on a bulk scale via simple vapor transport reaction between niobium and selenium. Needle-like single crystal Nb2Se9 contains numerous single Nb2Se9 chains linked by van der Waals interactions, and we confirmed that a bundle of chains can be easily separated by mechanical cleavage. The exfoliated Nb2Se9 flakes exhibit a quasi-two-dimensional layered structure, and the number of layers can be controlled using the repeated-peeling method. The work function varied depending on the thickness of the Nb2Se9 flakes as determined by scanning Kelvin probe microscopy. Moreover, we first implemented a field effect transistor (FET) based on nanoscale Nb2Se9 flakes and verified that it has p-type semiconductor characteristics. This novel 1D material can form a new family of 2D materials and is expected to play important roles in future nano-electronic devices.

CD44 is associated with tumor recurrence and is an independent poor prognostic factor for patients with localized clear cell renal cell carcinoma after nephrectomy.

CD44 has been implicated in tumor development and progression in several types of cancer. CD44 expression is altered in renal cell carcinoma (RCC) and has been suggested as a useful prognostic marker, but its prognostic role in RCC remains controversial. We investigated the expression of CD44 in a large homogeneous set of localized clear cell RCC to determine its potential prognostic value. We examined 110 patients with localized clear cell RCC who underwent nephrectomy. The clinicopathological data were obtained retrospectively and the expression level of CD44 was studied by immunohistochemistry. Correlations between CD44 expression and clinical parameters as well as survival were determined. The CD44-high expression group (HEG) was significantly associated with a higher nuclear grade (P=0.014) and tumor recurrence (P<0.001) when compared with the CD44-low expression group (LEG). Concerning survival, the 5-year recurrence-free survival (RFS) rates for the CD44-HEG and CD44-LEG groups were 38.9 and 91.3%, respectively (P<0.001), and the 5-year disease-specific survival (DSS) rates for the CD44-HEG and CD44-LEG groups were 55.6 and 94.6%, respectively (P<0.001). Multivariate analyses showed that CD44 expression [hazard ratio (HR), 9.204; P<0.001] was an independent risk factor predicting RFS in patients with clear cell RCC. CD44 expression remained an independent prognostic factor for DSS (P=0.002). In conclusion, these data indicate that CD44 expression is associated with the progression of clear cell RCC and is an independent poor prognostic factor for tumor recurrence and survival, suggesting that CD44 may serve as a useful molecular marker.