Overcoming the Interfacial Photocatalytic Degradation of Nonfullerene Acceptor-Based Organic Photovoltaics by Introducing a UV-A-Insensitive Titanium Suboxide Layer.

Although recent dramatic advances in power conversion efficiencies (PCEs) have resulted in values over 19%, the poor photostability of organic photovoltaics (OPVs) has been a serious bottleneck to their commercialization. The photocatalytic effect, which is caused by incident ultraviolet-A (UV-A, 320-400 nm) light in the most commonly used zinc oxide (ZnOX) electron transport layer (ETL), significantly deteriorates the photostability of OPVs. In this work, we develop a new and facile method to enhance the photostability of nonfullerene acceptor-based OPVs by introducing UV-A-insensitive titanium suboxide (TiOX) ETL. Through an in-depth analysis of mass information at the interface between the ETL and photoactive layer, we confirm that the UV-A-insensitive TiOX suppresses the photocatalytic effect. The resulting device employing the TiOX ETL shows excellent photostability, obtaining 80% of the initial PCE for up to 200 h under 1 sun illumination, which is 10 times longer than that of the conventional ZnOX system (19 h).

Defect-rich CeO2 in a hollow carbon matrix engineered from a microporous organic platform: a hydroxide-assisted high performance pseudocapacitive material.

A microporous organic polymer (MOP) was utilized for the engineering of nanoparticulate CeO2 in a hollow carbon matrix (H-C/CeO2). After CeO2 nanoparticles were incorporated into a hollow MOP platform (H-MOP) through the decomposition of cerium acetate, successive carbonization produced H-C/CeO2. The redox feature of defective CeO2 in a conductive carbon matrix induced promising pseudocapacitive behavior. In particular, the H-C/CeO2 showed excellent electrochemical performance in an alkaline electrolyte (KOH), due to the hydroxide ion-assisted redox behavior of defective CeO2. H-C/CeO2-3 with an optimized amount of CeO2 showed specific capacitances of up to 527 (@0.5 A g-1) and 493 F g-1 (@1 A g-1). Even at high current densities of 10 and 20 A g-1, the H-C/CeO2-3 maintained high capacitances of 458 and 440 F g-1, respectively. After 10 000 cycling tests, the H-C/CeO2-3 retained the 94-95% capacitance of the first cycle.

Synthesis and Surface Plasmonic Characterization of Asymmetric Au Split Nanorings.

In this Letter, a rational and stepwise method for the solution-phase synthesis of asymmetric Au split nanorings by adopting Au nanoprisms as a template has been demonstrated. The selective chemical etching of Au nanoprism tips activated the surface reactivity of edges and led to the selective deposition of Pt at the periphery of Au nanoplates. By controlling the total amount of Pt on the edges, different degrees of split Au@Pt nanorings were obtained; the subsequent Au coating around the Au@Pt scaffold eventually resulted in asymmetric Au hexagonal split nanorings. Their surface plasmonic features as a function of split degrees were investigated, including straight nanorods, bent nanorods, split nanorings, and full nanorings. The electrical field focusing using single-particle surface-enhanced Raman spectroscopy was evaluated under different polarization angles of the incident light for two different structures with the point gap and line gap between two arms.

Synthesis and Charge Transport of Polymer Nanocomposite of Polyaniline: Polystyrene Sulfonate.

We demonstrate the preparation of water-dispersible polyaniline:polystyrene sulfonate (PANI:PSS), which was doped with camphorsulfonic acid (CSA) and co-doped with poly (4-styrenesulfonic acid) (PSS). The proper formation of the PANI and PANI:PSS was verified by FTIR measurements. The synthesized samples were further characterized via UV-vis spectroscopy. The intensive study on the current density (J)-voltage (V) characteristics within the temperature range (143-303 K) of the synthesized sample was performed systematically. The electrical study shows that the doping of PANI with CSA as a dopant and PSS as a co-dopant significantly improves the overall semi-conducting property of PANI. The detailed analysis of the current density (J)-voltage (V) curve at various temperatures reveals the electrical conduction behavior, which follows the trap-dependent space-charge limited conduction (SCLC) mechanism.

Characterization of a Ferroelectric-Gated Graphene Memory Device Fabricated on a Flexible Substrate by Transfer Process.

The mechanical flexibility of both ferroelectric polymer and graphene provides the possibility for the memory device based on ferroelectric polymer and grapheme to operate on flexible substrate. Here, a memory device was fabricated on flexible substrate through the continuous transfer process of the two units with the ferroelectric polymer and the graphene hybrid film as one unit, and characterized. In particular, characteristics were maintained even with repetitive bending. The transfer process demonstrated in this paper is useful for implementing a memory device on a large-area substrate by consuming a very small amount of graphene.

Effect of UV and Water on Electrical Properties at Pre- and Post-Annealing Processes in Solution-Processed InGaZnO Transistors.

There are some reports related to applications of ultraviolet (UV) and water to enhance the electrical performance of metal oxide thin-film transistors (TFTs). We recently discovered that treatment timing and treatment method are also important for a good metal oxide thin-film formation. There are different influences on the metal oxide TFTs' electrical properties based on the UV irradiation and water treatment timing. The field-effect mobility of TFTs treated with UV-irradiation and water, which was spin-coated on the UV-irradiated film after pre-annealing, increased to 4.71 cm²V-1s-1 and 6.41 cm²V-1s-1. This was higher than the 3.39 cm²V-1s-1 field-effect mobility of non-treated TFTs. On the other hands, TFTs which were fabricated by the same method, with only varying the treatment time, after post-annealing, exhibited the tendency to show a decrease in field-effect mobility to 1.93 cm²V-1s-1 and 1.32 cm²V-1s-1, gradually, showing a contrasting tendency with the former conditions.

Combined use of bulked segregant analysis and microarrays reveals SNP markers pinpointing a major QTL for resistance to Phytophthora capsici in pepper.

KEY MESSAGE: Bulked segregant analysis (BSA) using Affymetrix GeneChips revealed candidate genes underlying the major QTL for Phytophthora capsici resistance in Capsicum. Using the candidate genes, reliable markers for Phytophthora resistance were developed and validated. Phytophthora capsici L. is one of the most destructive pathogens of pepper (Capsicum spp.). Resistance of pepper against P. capsici is controlled by quantitative trait loci (QTL), including a major QTL on chromosome 5 that is the predominant contributor to resistance. Here, to maximize the effect of this QTL and study its underlying genes, an F2 population and recombinant inbred lines were inoculated with P. capsici strain JHAI1-7 zoospores at a low concentration (3 × 10(3)/mL). Resistance phenotype segregation ratios for the populations fit a 3:1 and 1:1 (resistant:susceptible) segregation model, respectively, consistent with a single dominant gene model. Bulked segregant analysis (BSA) using Affymetrix GeneChips revealed a single position polymorphism (SPP) marker mapping to the major QTL. When this SPP marker (Phyto5SAR) together with other SNP markers located on chromosome 5 was used to confirm the position of the major QTL, Phyto5SAR showed the highest LOD value at the QTL. A scaffold sequence (scaffold194) containing Phyto5SAR was identified from the C. annuum genome database. The scaffold contained two putative NBS-LRR genes and one SAR 8.2A gene as candidates for contributing to P. capsici resistance. Markers linked to these genes were developed and validated by testing 100 F1 commercial cultivars. Among the markers, Phyto5NBS1 showed about 90% accuracy in predicting resistance phenotypes to a low-virulence P. capsici isolate. These results suggest that Phyto5NBS1 is a reliable marker for P. capsici resistance and can be used for identification of a gene(s) underlying the major QTL on chromosome 5.

Baekjeolyusin-tang and its active component berberine block the release of collagen and proteoglycan from IL-1ß-stimulated rabbit cartilage and down-regulate matrix metalloproteinases in rabbit chondrocytes.

Osteoarthritis (OA) is a major degenerative disease affecting millions of individuals. The ability of articular cartilage to self-repair is limited due to a low tissue turnover rate and the avascular nature of the cartilage, making OA an irreversible disease. In Korea, however, many traditional Korean medical doctors have treated joint disease with a prescription of traditional Korean medicine, BaekJeolYuSin-tang (BYT). Thus, the chondroprotective effects of BYT and its active component, berberine (Ber) were investigated in an experimental model. Here it is shown that BYT or Ber significantly inhibited the expression of matrix metalloproteinase (MMP)-3 and a disintegrin and metalloproteinase with thrombospondin motifs-5 as well as increasing the expression of tissue inhibitors of metalloproteinase-1, aggrecan and collagen in rabbit articular chondrocytes (p < 0.05). BYT or Ber significantly inhibited the secretion and activity of MMP-3 (p < 0.05). In addition, BYT or Ber significantly inhibited the release of collagen and glycosaminoglycan into the culture media from rabbit articular cartilage explants (p < 0.05). The data suggest that BYT or Ber has a therapeutic potential for the treatment of cartilage damage in osteoarthritis.