ABSTRACT
In this manuscript, we report on the paramagnetic Ho2O3-based synaptic resistive random-access memory device for the implementation of neuronal functionalities such as long-term potentiation, long-term depression and spike timing dependent plasticity respectively. The plasticity of the artificial synapse is also studied by varying pulse amplitude, pulse width, and pulse interval. In addition, we could classify handwritten Modified National Institute of Standards and Technology data set (MNIST) using a fully connected neural network (FCN). The device-based FCN records a high classification accuracy of 93.47% which is comparable to the software-based test accuracy of 97.97%. This indicates the highly optimized behavior of our synaptic device for hardware neuromorphic applications. Successful emulation of Pavlovian classical conditioning for associative learning of the biological brain is achieved. We believe that the present device consists the potential to utilize in neuromorphic applications.
ABSTRACT
We report on theα-Fe2O3-based artificial synaptic resistive random access memory device, which is a promising candidate for artificial neural networks (ANN) to recognize the images. The device consists of a structure Ag/α-Fe2O3/FTO and exhibits non-volatility with analog resistive switching characteristics. We successfully demonstrated synaptic learning rules such as long-term potentiation, long-term depression, and spike time-dependent plasticity. In addition, we also presented off-chip training to obtain good accuracy by backpropagation algorithm considering the synaptic weights obtained fromα-Fe2O3based artificial synaptic device. The proposedα-Fe2O3-based device was tested with the FMNIST and MNIST datasets and obtained a high pattern recognition accuracy of 88.06% and 97.6% test accuracy respectively. Such a high pattern recognition accuracy is attributed to the combination of the synaptic device performance as well as the novel weight mapping strategy used in the present work. Therefore, the ideal device characteristics and high ANN performance showed that the fabricated device can be useful for practical ANN implementation.
ABSTRACT
Brain-inspired neuromorphic computing which consist neurons and synapses, with an ability to perform complex information processing has unfolded a new paradigm of computing to overcome the von Neumann bottleneck. Electronic synaptic memristor devices which can compete with the biological synapses are indeed significant for neuromorphic computing. In this work, we demonstrate our efforts to develop and realize the graphene oxide (GO) based memristor device as a synaptic device, which mimic as a biological synapse. Indeed, this device exhibits the essential synaptic learning behavior including analog memory characteristics, potentiation and depression. Furthermore, spike-timing-dependent-plasticity learning rule is mimicked by engineering the pre- and post-synaptic spikes. In addition, non-volatile properties such as endurance, retentivity, multilevel switching of the device are explored. These results suggest that Ag/GO/fluorine-doped tin oxide memristor device would indeed be a potential candidate for future neuromorphic computing applications.
