ABSTRACT
InGaN/GaN, InGaN/InGaN and InGaN/AlInGaN multi-quantum-well (MQW) laser diodes (LDs) were grown on (0001) sapphire substrate by metalorganic chemical vapor deposition (MOCVD). The GaN (0002) synchrotron X-ray diffraction (XRD), electroluminescence (EL) and optical power-current (L-I) measurement reveal that AlInGaN quaternary alloys as barriers in MQWs can improve the crystal quality, optical emission performance, threshold current and slope efficiency of the laser diode structure to a large extent compared with other barriers. The relevant mechanisms are that: 1. The Al component increases the barrier height of the MQWs so that more current carriers will be caught in. 2. The In component counteracts the strain in the MQWs that decreases the dislocations and defects, thereby the nonradiative recombination centers are decreased. 3. The In component decreases the piezoelectric electric field that makes the electrons and the holes recombine more easily.
ABSTRACT
X-ray scattering was used to study the temperature dependence of the profile structure of polymerized 10,12-tricosadiynoic acid salt multilayers. The stacking periodicity of the multilayers was found to decrease with increasing temperature due to the conformational changes of the alkyl chains. When the samples were fully hydrated in water, the reflectivity measurement showed that the thermal fluctuations of the interfaces are enhanced with temperature, resulting in reduced ordering. Meanwhile, the diffuse scattering indicated that the thermal fluctuations renormalize the elasticity of the multilayers; both the bending and the compression moduli are reduced. Similar measurements performed in air, however, do not show this thermal enhancement although the stacking periodicity decreases in the same manner. It is implied that water might weaken the interaction between the carboxyl groups and the metal ions so that the polymerized bilayers are softened in water.
