Amphipathic Astaxanthin Additive for Low Voltage-loss Perovskite Solar Cells With Enhanced Quasi-Fermi Level Splitting and Solar Hydrogen Production Application.

Even though the power conversion efficiency (PCE) of perovskite solar cells (PSCs) is nearly approaching the Schottky-Queisser limit, low open-circuit voltage (Voc) and severe Voc loss problems continue to impede the improvement of PCEs. Astaxanthin (ASTA) additive is introduced in the formamidinium lead triiodide (FAPbI3) perovskite film as an additive, which can facilitate the transportation of charge carriers and interact with Pb2+ by its distinctive groupings. Furthermore, the addition of ASTA decreases the defect's active energy, regulates the deep-level defect by filling up the grain boundaries (GBs), and promotes the crystallization of perovskite film. Remarkably, an enhanced quasi-Fermi level splitting (QFLS) of 1.164 eV and a reduced Voc loss of only 96 mV are realized. The champion PCE of 24.56% is attained by ASTA-modified PSCs on the basis of 22.75% PCE. Moreover, the PSCs that underwent ASTA modification demonstrate improved operational stability, ensuring consistent output in real-world scenarios. Furthermore, PSCs with an active area of 1 cm2 are used for water electrolysis to produce hydrogen and exhibit a PCE of 22.41%. This work offers an environmentally benign solution to address the inherent issues of FAPbI3 PSCs and lays the groundwork for the development of a prospective solar hydrogen production application.

Bottom-Up Defect Modification Through Oily-Allicin Modified Buried Interface Achieving Highly Efficient and Stable Perovskite Solar Cells.

The buried interface properties of the perovskite solar cells (PSCs) play a crucial role in the power conversion efficiency (PCE) and operational stability. The metal-oxide/perovskite heterogeneous interfaces are highly defective and cause serious ion migration. However, the buried and unexposed bottom interface and simultaneous stabilization of grain boundaries receive less attention and effective solutions. To tackle this problem, a solid-liquid strategy is employed by introducing oily-additive allicin at the buried interface to passivate the shallow (VI and Vo) and deep traps (VPb and PbI). Interestingly, oily status allicin fills the pinholes at the heterointerface and wraps the perovskite grains, suppressing the ion migration during the photoaging process. As a result, an outstanding PCE of 25.07% is achieved with a remarkable fill factor (FF) of 84.03%. The modified devices can maintain 94.51% of the original PCE after light soaking under 1-sun illumination for 1000 h. This work demonstrates a buried interface modification method that employs an eco-friendly additive, which helps promote the development of PSCs with high performance and stability.

Trivalent Europium-Doped CsCl Quantum Dots for MA-Free Perovskite Solar Cells with Inherent Bandgap through Lattice Strain Compensation.

Cesium-formamidinium (Cs-FA) perovskites have garnered widespread interest owing to their excellent thermal- and photostability in achieving stable perovskite solar cells (PSCs). However, Cs-FA perovskite typically suffers from Cs+ and FA+ mismatches, affecting the Cs-FA morphology and lattice distortion, resulting in an enlarged bandgap (Eg ). In this work, "upgraded" CsCl, Eu3+ -doped CsCl quantum dots, are developed to solve the key issues in Cs-FA PSCs and also exploit the advantage of Cs-FA PSCs on stability. The introduction of Eu3+ promotes the formation of high-quality Cs-FA films by adjusting the Pb-I cluster. CsCl:Eu3+ also offsets the local strain and lattice contraction induced by Cs+ , which maintains the inherent Eg of FAPbI3 and decreases the trap density. Finally, a power conversion efficiency (PCE) of 24.13% is obtained with an excellent short-circuit current density of 26.10 mA cm-2 . The unencapsulated devices show excellent humidity stability and storage stability, and an initial PCE of 92.2% within 500 h under continuous light illumination, and bias voltage conditions is achieved. This study provides a universal strategy to address the inherent issues of Cs-FA devices and maintain the stability of MA-free PSCs to satisfy future commercial criteria.

Interfacial Engineering of Au@Nb2CTx-MXene Modulates the Growth Strain, Suppresses the Auger Recombination, and Enables an Open-Circuit Voltage of over 1.2 V in Perovskite Solar Cells.

Defects at the interface of charge transport layers can cause severe charge accumulation and poor charge transferability, which greatly affect the efficiency and stability of stannic oxide (SnO2)-based perovskite solar cells (PSCs). Herein, a new type of MXene (Nb2CTx-MXene) is applied to the interface of SnO2 layers to passivate the interfacial defects and promote charge transport. Nb2CTx-MXene in PSCs realizes the role of boosting the conductivity, reducing the tin vacancies in the interstitial void of the SnO2 layer, decreasing the defect density, and aligning the bandgap. Afterward, Nb2CTx-MXene is decorated with gold nanospheres, which has the ability to modulate the tensile strain of perovskites and suppress the Auger recombination. Eventually, the Au@Nb2CTx-MXene-modified device yields an excellent power conversion efficiency (PCE) of 23.78% with a relatively high open-circuit voltage of 1.215 V (Eg ∼ 1.60 eV). The unencapsulated devices maintain 90% of their initial PCE values after storage in the air with a relative humidity of 40% for 1000 h and remain above 80% of their initial efficiency after operation at the maximum power point for 500 h under 1 sun illumination. Our work provides an avenue to fabricate high-efficiency and stable PSCs with MXene adapting to commercial development.