Chiral anomaly and Weyl orbit in three-dimensional Dirac semimetal Cd3As2grown on Si.

Preparing Cd3As2, which is a three-dimensional (3D) Dirac semimetal in certain crystal orientation, on Si is highly desirable as such a sample may well be fully compatible with existing Si CMOS technology. However, there is a dearth of such a study regarding Cd3As2films grown on Si showing the chiral anomaly. Here,for the first time, we report the novel preparation and fabrication technique of a Cd3As2(112) film on a Si (111) substrate with a ZnTe (111) buffer layer which explicitly shows the chiral anomaly with a nontrivial Berry's phase ofπ. Despite the Hall carrier density (n3D≈9.42×1017cm-3) of our Cd3As2film, which is almost beyond the limit for the portents of a 3D Dirac semimetal to emerge, we observe large linear magnetoresistance in a perpendicular magnetic field and negative magnetoresistance in a parallel magnetic field. These results clearly demonstrate the chiral magnetic effect and 3D Dirac semimetallic behavior in our silicon-based Cd3As2film. Our tailoring growth of Cd3As2on a conventional substrate such as Si keeps the sample quality, while also achieving a low carrier concentration.

Chirality-Induced Noncollinear Magnetization and Asymmetric Domain-Wall Propagation in Hydrogenated CoPd Thin Films.

Array-patterned CoPd-based heterostructures are created through e-beam lithography and plasma pretreatment that induces oxidation with depth gradient in the CoPd alloy films, breaking the central symmetry of the structure. Effects on the magnetic properties of the follow-up hydrogenation of the thin film are observed via magneto-optic Kerr effect microscopy. The system exhibits a strong vertical and lateral antiferromagnetic coupling in the perpendicular component between the areas with and without plasma pretreatment, and asymmetric domain-wall propagation in the plasma-pretreated areas during magnetization reversal. These phenomena exhibit evident magnetic chirality and can be interpreted with the Ruderman-Kittel-Kasuya-Yosida coupling and the Dzyaloshinskii-Moriya interaction (DMI). The sample processing demonstrated in this study allows easy incorporation of lithography techniques that can define areas with or without DMI to create intricate magnetic patterns on the sample, which provides an avenue toward more sophisticated control of canted spin textures in future spintronic devices.

Magnetic patterning through graphene protection against oxidation and interlayer diffusion.

Graphene (Gr) has been demonstrated to protect metallic thin films against oxidation. Based on this idea, we propose a new method to fabricate microstructured magnetic domains using patterned single-layer Gr. In the first experiment, single-layer Gr was transferred onto a CoPd alloy film pregrown on a SiO2/Si(001) substrate. Subsequently, the single-layer Gr was patterned through electron beam lithography followed by oxygen plasma etching to expose selective micron-sized areas of CoPd. The exposed areas of CoPd were more easily oxidized compared to the areas protected by Gr, which is found to result in significant magnetic contrast between the protected and surface-oxidized areas of CoPd. In the second experiment, a lithographically-patterned Gr layer was placed between the Fe and CoPd layers to block interlayer diffusion area-selectively during sample annealing. Magnetic contrast is observed to be established between the Pd/Fe/Gr/CoPd and Pd/Fe/CoPd areas, leading to a magnetic structure that matches the pattern of the lithographed Gr. These observations demonstrate that Gr patterning is a simple and powerful method for magnetic patterning, which can be applied in the fabrication of future data-storage and spintronic devices.

Polymer-free patterning of graphene at sub-10-nm scale by low-energy repetitive electron beam.

A polymer-free technique for generating nanopatterns on both synthesized and exfoliated graphene sheets is proposed and demonstrated. A low-energy (5-30 keV) scanning electron beam with variable repetition rates is used to etch suspended and unsuspended graphene sheets on designed locations. The patterning mechanisms involve a defect-induced knockout process in the initial etching stage and a heat-induced curling process in a later stage. Rough pattern edges appear due to inevitable stochastic knockout of carbon atoms or graphene structure imperfection and can be smoothed by thermal annealing. By using this technique, the minimum feature sizes achieved are about 5 nm for suspended and 7 nm for unsuspended graphene. This study demonstrates a polymer-free direct nanopatterning approach for graphene.

Spin blockade in the conduction of colloidal CdSe nanocrystal films.

The conduction of thin films of n-type CdSe colloidal quantum dots is studied at low temperature and under magnetic field. At medium and high magnetic fields (10 T), the films exhibit positive magnetoresistance consistent with the variable range hopping model. At low magnetic field(<0.3 T) but in the strong electric field regime, there is a narrower magnetoresistance of order 10%-15%. The magnetoresistance shows a strong bias dependence, small and positive at low bias, increasing but still positive at higher bias, and turning negative at the highest bias. A similar behavior has been reported recently for thin film organics. Weak localization effects are ruled out. The explanation for the observations is based on spin blockade relaxed by the hyperfine interaction. The weak magnetoresistance at low bias is attributed to the diffusing paths taken by the hopping electrons. At higher bias, the more directed motion of electrons leads to increasingly positive magnetoresistance due to the more effective spin blockade. At the highest bias, the magnetoresistance becomes negative, which is attributed to the increased exchange interaction associated with the shorter tunneling distance.