MBCAST: A Forecast Model for Marssonina Blotch of Apple in Korea.

A disease forecast model for Marssonina blotch of apple was developed based on field observations on airborne spore catches, weather conditions, and disease incidence in 2013 and 2015. The model consisted of the airborne spore model (ASM) and the daily infection rate model (IRM). It was found that more than 80% of airborne spore catches for the experiment period was made during the spore liberation period (SLP), which is the period of days of a rain event plus the following 2 days. Of 13 rain-related weather variables, number of rainy days with rainfall ≥ 0.5 mm per day (L day ), maximum hourly rainfall (P max ) and average daily maximum wind speed (W avg ) during a rain event were most appropriate in describing variations in air-borne spore catches during SLP (S i ) in 2013. The ASM, S i = 30.280+5.860×L day ×P max -2.123×L day ×P max ×W avg was statistically significant and capable of predicting the amount of airborne spore catches during SLP in 2015. Assuming that airborne conidia liberated during SLP cause leaf infections resulting in symptom appearance after 21 days of incubation period, there was highly significant correlation between the estimated amount of airborne spore catches (S i ) and the daily infection rate (R i ). The IRM, R̂ i = 0.039+0.041×S i , was statistically significant but was not able to predict the daily infection rate in 2015. No weather variables showed statistical significance in explaining variations of the daily infection rate in 2013.

Nanotexturing process on microtextured surfaces of silicon solar cells by SF6/O2 reactive ion etching.

We investigated a nanotexturing process on the microtextured surface of single crystalline silicon solar cell by the reactive ion etching process in SF6/O2 mixed gas ambient. P-type Si wafer samples were prepared using a chemical wet etching process to address saw damage removal and achieve microtexturing. The microtextured wafers were further processed for nanotexturing by exposure to reactive ions within a circular tray of wafer carrier containing many small holes for uniform etching. As the dry etching times were increased to 2, 4 and finally to 8 min, surface structures were observed in a transition from nanoholes to nanorods, and a variation in wafer color from dark blue to black. The surface nanostructures showed a lowered photoreflectance and enhanced quantum efficiency within the visible light region with wavelengths of less than 679 nm. The nanohole structure etched for 2 min showed enhanced conversion efficiency when compared to the bare sample; however, the nanorod structure etched for 8 min exhibited the decreased efficiency with a reduced short circuit current, indicating that the surface nanostructural damage with the enlarged nanoperimetric surface area is sensitive to surface passivation from the surface recombination process.