Anomalous spectral shift of localized surface plasmon resonance.

We report the first observation of spectral blue shift of plasmon resonance of synthesized silver nanoparticles (AgNPs) due to a negative optical nonlinearity of a local ambient medium, i.e., indigo carmine (IC) solution at around 420 nm wavelength. The blue shift occurred at a larger concentration of AgNPs or at a larger concentration of IC solution, being in obvious contrast to spectral red shift which was widely witnessed in plasmon spectral shift in a linear regime. Plasmon-enhanced local fields could excite the third-order optical nonlinearity for blue shift even under continuous (non-pulsed) light illumination. We also found that the plasmon-excited nonlinearity could allow for differential nonlinear response of the IC solution to be even greater than its differential linear response, though appearing to be somewhat inconsistent with what was generally known in light-matter interaction. The demonstrated properties of such anomalous shift of plasmon spectral peaks and its accompanying properties indicated that plasmon technologies could be exploited not only in linear but also in nonlinear aspects for critical optimization in plasmon-energy harvesting systems such as in surface enhanced spectroscopy/microscopy, biomedical imaging/sensing, laser frequency conversion, ultrashort pulse generation, and all-optical switching.

Uniform Synthesis of Bilayer Hydrogen Substituted Graphdiyne for Flexible Piezoresistive Applications.

Graphdiyne (GDY) has garnered significant attention as a cutting-edge 2D material owing to its distinctive electronic, optoelectronic, and mechanical properties, including high mobility, direct bandgap, and remarkable flexibility. One of the key challenges hindering the implementation of this material in flexible applications is its large area and uniform synthesis. The facile growth of centimeter-scale bilayer hydrogen substituted graphdiyne (Bi-HsGDY) on germanium (Ge) substrate is achieved using a low-temperature chemical vapor deposition (CVD) method. This material's field effect transistors (FET) showcase a high carrier mobility of 52.6 cm2  V-1  s-1 and an exceptionally low contact resistance of 10 Ω µm. By transferring the as-grown Bi-HsGDY onto a flexible substrate, a long-distance piezoresistive strain sensor is demonstrated, which exhibits a remarkable gauge factor of 43.34 with a fast response time of ≈275 ms. As a proof of concept, communication by means of Morse code is implemented using a Bi-HsGDY strain sensor. It is believed that these results are anticipated to open new horizons in realizing Bi-HsGDY for innovative flexible device applications.

Protocol for preparing layer-engineered van der Waals materials through atomic spalling.

Here, we present a protocol for preparing layer-engineered van der Waals (vdW) materials via an atomic spalling process. We describe steps for fixing bulk crystals and introduce the appropriate stressor materials. We then detail a deposition technique for internal stress regulation of stressor film, followed by layer-engineered atomic-scale spalling to exfoliate vdW materials with a controlled number of layers from bulk crystals. Lastly, we outline a procedure for polymer/stressor film removal. For complete details on the use and execution of this protocol, please refer to Moon et al.1.