Single-Solution Bar-Coated Halide Perovskite Films via Mediating Crystallization for Scalable Solar Cell Fabrication.

The development of a scalable fabrication technology for halide perovskite solar cells (HPSCs) is an important challenge to realize their commercialization. In particular, continuous solution-coating processes are needed to produce scalable large-area HPSCs. Herein, we report a single-solution bar-coating process that introduces an intermediate phase stage for large-area CH3NH3PbI3 films with full coverage and smooth morphology using N-cyclohexyl-2-pyrrolidone (CHP) as a mediator. In contrast to the conventional double-solution coating methods that use antisolvent treatments, the preformed uniform intermediate phase in the single-solution bar-coating process enables the formation of highly uniform perovskite films with a 10 cm × 10 cm area even without antisolvent treatment. The HPSCs fabricated using the resultant single-solution bar-coated perovskite films exhibit superior photovoltaic performance, narrower distribution, and smaller loss with a larger active area than devices fabricated using single-solution spin-coated perovskite films.

Point defect-reduced colloidal SnO2 electron transport layers for stable and almost hysteresis-free perovskite solar cells.

The commercialization of perovskite solar cells has been investigated, but the instability of their light-absorbing layers remains a problem. We demonstrate that the use of colloidal SnO2 nanoparticles prevents perovskite light absorber decomposition, reduces the hysteresis index to 0.1%, and increases the power conversion efficiency to 19.12%.

Fully gravure printed complementary carbon nanotube TFTs for a clock signal generator using an epoxy-imine based cross-linker as an n-dopant and encapsulant.

Printed p-type single walled carbon nanotube (SWCNT) based circuits exhibit high power dissipation owing to their thick printed dielectric layers (>2 µm) and long channels (>100 µm). In order to reduce the static power dissipation of printed SWCNT-base circuits while maintaining the same printing conditions and channel lengths, complementary metal-oxide-semiconductor (CMOS) based circuits are more ideal. These circuits, however, have not been successfully implemented in a scalable printing platform due to unstable threshold voltages of n-doped SWCNT based thin film transistors (TFTs). In this work, a thermally curable epoxy-imine-based n-doping ink is presented for achieving uniform doping and sealing of SWCNT layers by gravure printing. After printing the n-doping ink, the ink is cured to initiate a cross-linking reaction to seal the n-doped SWCNT-TFTs so that the threshold voltage of the n-doped SWCNT-TFTs is stabilized. Flexible CMOS ring oscillators using such n-doped SWCNT-TFTs combined with the intrinsically p-type SWCNT-TFTs can generate a 0.2 Hz clock signal with significantly lower power consumption compared to similarly printed p-type only TFT based ring oscillators. Moving forward, this CMOS flexible ring oscillator can be practically used to develop fully printed inexpensive wireless sensor tags.

All-solution-processed PbS quantum dot solar modules.

A rapid increase in power conversion efficiencies in colloidal quantum dot (QD) solar cells has been achieved recently with lead sulphide (PbS) QDs by adapting a heterojunction architecture, which consists of small-area devices associated with a vacuum-deposited buffer layer with metal electrodes. The preparation of QD solar modules by low-cost solution processes is required to further increase the power-to-cost ratio. Herein we demonstrate all-solution-processed flexible PbS QD solar modules with a layer-by-layer architecture comprising polyethylene terephthalate (PET) substrate/indium tin oxide (ITO)/titanium oxide (TiO2)/PbS QD/poly(3-hexylthiophene) (P3HT)/poly(3,4-ethylenedioxythiophene) : poly(styrene sulfonate) (PEDOT : PSS)/Ag, with an active area of up to 30 cm(2), exhibiting a power conversion efficiency (PCE) of 1.3% under AM 1.5 conditions (PCE of 2.2% for a 1 cm(2) unit cell). Our approach affords trade-offs between power and the active area of the photovoltaic devices, which results in a low-cost power source, and which is scalable to larger areas.

Fully printed, high performance carbon nanotube thin-film transistors on flexible substrates.

Fully printed transistors are a key component of ubiquitous flexible electronics. In this work, the advantages of an inverse gravure printing technique and the solution processing of semiconductor-enriched single-walled carbon nanotubes (SWNTs) are combined to fabricate fully printed thin-film transistors on mechanically flexible substrates. The fully printed transistors are configured in a top-gate device geometry and utilize silver metal electrodes and an inorganic/organic high-κ (~17) gate dielectric. The devices exhibit excellent performance for a fully printed process, with mobility and on/off current ratio of up to ~9 cm(2)/(V s) and 10(5), respectively. Extreme bendability is observed, without measurable change in the electrical performance down to a small radius of curvature of 1 mm. Given the high performance of the transistors, our high-throughput printing process serves as an enabling nanomanufacturing scheme for a wide range of large-area electronic applications based on carbon nanotube networks.