Thermal Conductivity Calculation in Organic Liquids: Application to Poly-α-Olefin.

In this work, we aim to understand and predict the thermal properties of automotive lubricants using non-equilibrium molecular dynamics. After a previous study on model materials for the mechanical parts of a car engine, we now focus on the thermal conductivity κ of the poly-α-olefin base oil (PAO4) using the well-known sink and source method to study the response of the system to an imposed heat flux. We present a detailed methodology for the calculation of κ, taking into account specific constraints related to the system under study, such as large steady-state fluctuations and rapidly growing stationarization times. We provide thermal conductivity results using four different force fields, including OPLS-AA, PCFF and COMPASS, in a temperature range of 300 to 500 K, which corresponds to the typical operating range of a car engine. The results are compared to experimental measurements performed on the commercial compound using the laser flash method. Agreement at room temperature is shown to be excellent for our in-house force field.

Thermoelectric power factor of pure and doped ZnSb via DFT based defect calculations.

The power factor of pure p-type ZnSb has been calculated via ab initio simulations assuming that the carrier concentrations are due to the doping effect of intrinsic zinc vacancies. With a vacancy concentration close to the experimental solubility limit we were able to perfectly reproduce the Power Factor measured in polycrystalline ZnSb samples. The methodology has then been successfully extended for predicting the effect of extrinsic doping elements on the thermoelectric properties of ZnSb. Germanium and tin seem to be promising p-type doping elements. In addition, we give, for the first time, an explanation of why it is difficult to synthesize polycrystalline n-type ZnSb samples. Indeed, compensative effects between intrinsic defects (zinc vacancies) and doping elements (Ga, or In) explain the existence of an optimal (and relatively high) dopant concentration necessary to convert ZnSb into an n-type semiconductor.

Fully Ab-Initio Determination of the Thermoelectric Properties of Half-Heusler NiTiSn: Crucial Role of Interstitial Ni Defects.

For thermoelectric applications, ab initio methods generally fail to predict the transport properties of the materials because of their inability to predict properly the carrier concentrations that control the electronic properties. In this work, a methodology to fill in this gap is applied on the NiTiSn half Heusler phase. For that, we show that the main defects act as donor of electrons and are responsible of the electronic properties of the material. Indeed, the presence of Nii interstitial defects explains the experimental valence band spectrum and its associated band gap reported in the literature. Moreover, combining the DOS of the solid solutions with the determination of the energy of formation of charged defects, we show that Nii defects are also responsible of the measured carrier concentration in experimentally supposed "pure" NiTiSn compounds. Subsequently the thermoelectric properties of NiTiSn can be calculated using a fully ab initio description and an overall correct agreement with experiments is obtained. This methodology can be extended to predict the result of extrinsic doping and thus to select the most efficient dopant for specific thermoelectric applications.

Thermal conductivity calculation in anisotropic crystals by molecular dynamics: Application to α-Fe2O3.

In this work, we aim to study the thermal properties of materials using classical molecular dynamics simulations and specialized numerical methods. We focus primarily on the thermal conductivity κ using non-equilibrium molecular dynamics (NEMD) to study the response of a crystalline solid, namely hematite (α-Fe2O3), to an imposed heat flux as is the case in real life applications. We present a methodology for the calculation of κ as well as an adapted potential for hematite. Taking into account the size of the simulation box, we show that not only the longitudinal size (in the direction of the heat flux) but also the transverse size plays a role in the determination of κ and should be converged properly in order to have reliable results. Moreover we propose a comparison of thermal conductivity calculations in two different crystallographic directions to highlight the spatial anisotropy and we investigate the non-linear temperature behavior typically observed in NEMD methods.

Lattice stability and formation energies of intrinsic defects in Mg2Si and Mg2Ge via first principles simulations.

We report an ab initio study of the semiconducting Mg(2)X (with X = Si, Ge) compounds and in particular we analyze the formation energies of the different point defects with the aim of understanding the intrinsic doping mechanisms. We find that the formation energy of Mg(2)Ge is 50% larger than that of Mg(2)Si, in agreement with the experimental tendency. From a study of the stability and the electronic properties of the most stable defects, taking into account the growth conditions, we show that the main cause of the n doping in these materials comes from interstitial magnesium defects. Conversely, since other defects acting like acceptors such as Mg vacancies or multivacancies are more stable in Mg(2)Ge than in Mg(2)Si, this explains why Mg(2)Ge can be of n or p type, in contrast to Mg(2)Si. The finding that the most stable defects are different in Mg(2)Si and Mg(2)Ge and depend on the growth conditions is important and must be taken into account in the search for the optimal doping to improve the thermoelectric properties of these materials.

Physical properties of thallium-tellurium based thermoelectric compounds using first-principles simulations.

We present a study of the thermodynamic and physical properties of Tl(5)Te(3), BiTl(9)Te(6), and SbTl(9)Te(6) compounds by means of density functional theory based calculations. The optimized lattice constants of the compounds are in good agreement with the experimental data. The electronic density of states and band structures are calculated to understand the bonding mechanism in the three compounds. The indirect band gaps of BiTl(9)Te(6) and SbTl(9)Te(6) compounds are found to be equal to 0.256 and 0.374 eV, respectively. The spin-orbit coupling has important effects on the electronic structure of the two semiconducting compounds and should therefore be included for a good numerical description of these materials. The elastic constants of the three compounds have been calculated, and the bulk modulus, shear modulus, and Young's modulus have been determined. The change from ductile to brittle behavior after Sb or Bi alloying is related to the change of the electronic properties. Finally, the Debye temperature and longitudinal, transverse, and average sound velocities have been obtained.

Sodium diffusion through amorphous silica surfaces: a molecular dynamics study.

We have studied the diffusion inside the silica network of sodium atoms initially located outside the surfaces of an amorphous silica film. We have focused our attention on structural and dynamical quantities, and we have found that the local environment of the sodium atoms is close to the local environment of the sodium atoms inside bulk sodo-silicate glasses obtained by quench. This is in agreement with recent experimental results.