Arsenic for high-capacity lithium- and sodium-ion batteries.

We report arsenic (As) as a promising alternative to graphite anode materials in lithium- and sodium-ion batteries (LIBs and SIBs). The electrochemical properties of the As/carbon nanocomposite for both LIBs and SIBs were investigated using experimental and theoretical approaches. The LIBs showed excellent cycling performance, with a reversible capacity of 1306 mA h g-1 (after 100 cycles), which is much higher than that of Li3As (1072 mA h g-1). In the corresponding SIBs, the measured reversible capacity was 750 mA h g-1 (after 200 cycles), which is lower than that of Na3As. Extensive first-principles calculations were performed employing a structure prediction method for crystalline LixAs and NaxAs (x = 1-6) phases, as well as ab initio molecular dynamics simulations for their amorphous phases. In good agreement with the experimental LIB data, our calculations successfully predict the discharge capacity versus voltage curves, showing that the capacity of the amorphous phase reaches up to that of Li4As. In contrast, the SIB exhibited difficulty in reaching the predicted capacity (x = 3.5), probably due to significant volume expansion. Comparison of the theoretical discharge curves with the experimental data provides valuable information for the development of high-performance LIBs and SIBs.

Surface-Modified Ta3N5 Nanocrystals with Boron for Enhanced Visible-Light-Driven Photoelectrochemical Water Splitting.

Photocatalysts for water splitting are the core of renewable energy technologies, such as hydrogen fuel cells. The development of photoelectrode materials with high efficiency and low corrosivity has great challenges. In this study, we report new strategy to improve performance of tantalum nitride (Ta3N5) nanocrystals as promising photoanode materials for visible-light-driven photoelectrochemical (PEC) water splitting cells. The surface of Ta3N5 nanocrystals was modified with boron whose content was controlled, with up to 30% substitution of Ta. X-ray photoelectron spectroscopy revealed that boron was mainly incorporated into the surface oxide layers of the Ta3N5 nanocrystals. The surface modification with boron increases significantly the solar energy conversion efficiency of the water-splitting PEC cells by shifting the onset potential cathodically and increasing the photocurrents. It reduces the interfacial charge-transfer resistance and increases the electrical conductivity, which could cause the higher photocurrents at lower potential. The onset potential shift of the PEC cell with the boron incorporation can be attributed to the negative shift of the flat band potential. We suggest that the boron-modified surface acts as a protection layer for the Ta3N5 nanocrystals, by catalyzing effectively the water splitting reaction.

Schottky nanocontact of one-dimensional semiconductor nanostructures probed by using conductive atomic force microscopy.

To develop the advanced electronic devices, the surface/interface of each component must be carefully considered. Here, we investigate the electrical properties of metal-semiconductor nanoscale junction using conductive atomic force microscopy (C-AFM). Single-crystalline CdS, CdSe, and ZnO one-dimensional nanostructures are synthesized via chemical vapor transport, and individual nanobelts (or nanowires) are used to fabricate nanojunction electrodes. The current-voltage (I -V) curves are obtained by placing a C-AFM metal (PtIr) tip as a movable contact on the nanobelt (or nanowire), and often exhibit a resistive switching behavior that is rationalized by the Schottky (high resistance state) and ohmic (low resistance state) contacts between the metal and semiconductor. We obtain the Schottky barrier height and the ideality factor through fitting analysis of the I-V curves. The present nanojunction devices exhibit a lower Schottky barrier height and a higher ideality factor than those of the bulk materials, which is consistent with the findings of previous works on nanostructures. It is shown that C-AFM is a powerful tool for characterization of the Schottky contact of conducting channels between semiconductor nanostructures and metal electrodes.

Red-to-Ultraviolet Emission Tuning of Two-Dimensional Gallium Sulfide/Selenide.

Graphene-like two-dimensional (2D) nanostructures have attracted significant attention because of their unique quantum confinement effect at the 2D limit. Multilayer nanosheets of GaS-GaSe alloy are found to have a band gap (Eg) of 2.0-2.5 eV that linearly tunes the emission in red-to-green. However, the epitaxial growth of monolayers produces a drastic increase in this Eg to 3.3-3.4 eV, which blue-shifts the emission to the UV region. First-principles calculations predict that the Eg of these GaS and GaSe monolayers should be 3.325 and 3.001 eV, respectively. As the number of layers is increased to three, both the direct/indirect Eg decrease significantly; the indirect Eg approaches that of the multilayers. Oxygen adsorption can cause the direct/indirect Eg of GaS to converge, resulting in monolayers with a strong emission. This wide Eg tuning over the visible-to-UV range could provide an insight for the realization of full-colored flexible and transparent light emitters and displays.

In Situ Temperature-Dependent Transmission Electron Microscopy Studies of Pseudobinary mGeTe·Bi2Te3 (m = 3-8) Nanowires and First-Principles Calculations.

Phase-change nanowires (NWs) have emerged as critical materials for fast-switching nonvolatile memory devices. In this study, we synthesized a series of mGeTe·Bi2Te3 (GBT) pseudobinary alloy NWs-Ge3Bi2Te6 (m = 3), Ge4Bi2Te7 (m = 4), Ge5Bi2Te8 (m = 5), Ge6Bi2Te9 (m = 6), and Ge8Bi2Te11 (m = 8)-and investigated their composition-dependent thermal stabilities and electrical properties. As m decreases, the phase of the NWs evolves from the cubic (C) to the hexagonal (H) phase, which produces unique superlattice structures that consist of periodic 2.2-3.8 nm slabs for m = 3-8. In situ temperature-dependent transmission electron microscopy reveals the higher thermal stability of the compositions with lower m values, and a phase transition from the H phase into the single-crystalline C phase at high temperatures (400 °C). First-principles calculations, performed for the superlattice structures (m = 1-8) of GBT and mGeTe·Sb2Te3 (GST), show an increasing stability of the H phase (versus the C phase) with decreasing m; the difference in stability being more marked for GBT than for GST. The calculations explain remarkably the phase evolution of the GBT and GST NWs as well as the composition-dependent thermal stabilities. Measurement of the current-voltage curves for individual GBT NWs shows that the resistivity is in the range 3-25 mΩ·cm, and the resistivity of the H phase is lower than that of the C phase, which has been supported by the calculations.

Zn3P2-Zn3As2 solid solution nanowires.

Semiconductor alloy nanowires (NWs) have recently attracted considerable attention for applications in optoelectronic nanodevices because of many notable properties, including band gap tunability. Zinc phosphide (Zn3P2) and zinc arsenide (Zn3As2) belong to a unique pseudocubic tetragonal system, but their solid solution has rarely been studied. Here In this study, we synthesized composition-tuned Zn3(P1-xAsx)2 NWs with different crystal structures by controlling the growth conditions during chemical vapor deposition. A first type of synthesized NWs were single-crystalline and grew uniformly along the [110] direction (in a cubic unit cell) over the entire compositional range (0 ≤ x ≤ 1) explored. The use of an indium source enabled the growth of a second type of NWs, with remarkable cubic-hexagonal polytypic twinned superlattice and bicrystalline structures. The growth direction of the Zn3P2 and Zn3As2 NWs was also switched to [111] and [112], respectively. These structural changes are attributable to the Zn-depleted indium catalytic nanoparticles which favor the growth of hexagonal phases. The formation of a solid solution at all compositions allowed the continuous tuning of the band gap (1.0-1.5 eV). Photocurrent measurements were performed on individual NWs by fabricating photodetector devices; the single-crystalline NWs with [110] growth direction exhibit a higher photoconversion efficiency compared to the twinned crystalline NWs with [111] or [112] growth direction.

GaP-ZnS pseudobinary alloy nanowires.

Multicomponent nanowires (NWs) are of great interest for integrated nanoscale optoelectronic devices owing to their widely tunable band gaps. In this study, we synthesize a series of (GaP)(1-x)(ZnS)(x) (0 ≤ x ≤ 1) pseudobinary alloy NWs using the vapor transport method. Compositional tuning results in the phase evolution from the zinc blende (ZB) (x < 0.4) to the wurtzite (WZ) phase (x > 0.7). A coexistence of ZB and WZ phases (x = 0.4-0.7) is also observed. In the intermediate phase coexistence range, a core-shell structure is produced with a composition of x = 0.4 and 0.7 for the core and shell, respectively. The band gap (2.4-3.7 eV) increases nonlinearly with increasing x, showing a significant bowing phenomenon. The phase evolution leads to enhanced photoluminescence emission. Strikingly, the photoluminescence spectrum shows a blue-shift (70 meV for x = 0.9) with increasing excitation power, and a wavelength-dependent decay time. Based on the photoluminescence data, we propose a type-II pseudobinary heterojunction band structure for the single-crystalline WZ phase ZnS-rich NWs. The slight incorporation of GaP into the ZnS induces a higher photocurrent and excellent photocurrent stability, which opens up a new strategy for enhancing the performance of photodetectors.

Laser-induced graphitization of colloidal nanodiamonds for excellent oxygen reduction reaction.

Graphitized nanodiamonds were conveniently prepared by the laser irradiation of colloidal solution using various solvents. The nanodiamonds were converted into a fully graphitized onion-like structure, which became a cage-like mesoporous structure by the degradation of graphitic layers. Alcohols, acetone, and acetonitrile are more efficient solvents for the graphitization compared to water and hydrocarbons. Therefore the number and morphology of the graphitic layers can be simply controlled by the solvent and laser-irradiation duration. We suggest a graphitization model, in which the photocatalytic oxidation of the solvent accelerates the graphitization of nanodiamonds. The graphitized nanodiamonds were easily doped with the nitrogen and sulfur atoms in a controlled manner. In particular, the spherical graphitic layers were preferentially doped with the pyrrolic nitrogen that enhances remarkably electrocatalytic activity for the oxygen reduction reaction.

Phase evolution of tin nanocrystals in lithium ion batteries.

Sn-based nanostructures have emerged as promising alternative materials for commercial lithium-graphite anodes in lithium ion batteries (LIBs). However, there is limited information on their phase evolution during the discharge/charge cycles. In the present work, we comparatively investigated how the phases of Sn, tin sulfide (SnS), and tin oxide (SnO2) nanocrystals (NCs) changed during repeated lithiation/delithiation processes. All NCs were synthesized by a convenient gas-phase photolysis of tetramethyl tin. They showed excellent cycling performance with reversible capacities of 700 mAh/g for Sn, 880 mAh/g for SnS, and 540 mAh/g for SnO2 after 70 cycles. Tetragonal-phase Sn (ß-Sn) was produced upon lithiation of SnS and SnO2 NCs. Remarkably, a cubic phase of diamond-type Sn (α-Sn) coexisting with ß-Sn was produced by lithiation for all NCs. As the cycle number increased, α-Sn became the dominant phase. First-principles calculations of the Li intercalation energy of α-Sn (Sn8) and ß-Sn (Sn4) indicate that Sn4Li(x) (x ≤ 3) is thermodynamically more stable than Sn8Li(x) (x ≤ 6) when both have the same composition. α-Sn maintains its crystalline form, while ß-Sn becomes amorphous upon lithiation. Based on these results, we suggest that once α-Sn is produced, it can retain its crystallinity over the repeated cycles, contributing to the excellent cycling performance.

Tetragonal phase germanium nanocrystals in lithium ion batteries.

Various germanium-based nanostructures have recently demonstrated outstanding lithium ion storage ability and are being considered as the most promising candidates to substitute current carbonaceous anodes of lithium ion batteries. However, there is limited understanding of their structure and phase evolution during discharge/charge cycles. Furthermore, the theoretical model of lithium insertion still remains a challenging issue. Herein, we performed comparative studies on the cycle-dependent lithiation/delithiation processes of germanium (Ge), germanium sulfide (GeS), and germanium oxide (GeO2) nanocrystals (NCs). We synthesized the NCs using a convenient gas phase laser photolysis reaction and attained an excellent reversible capacity: 1100-1220 mAh/g after 100 cycles. Remarkably, metastable tetragonal (ST12) phase Ge NCs were constantly produced upon lithiation and became the dominant phase after a few cycles, completely replacing the original phase. The crystalline ST12 phase persisted through 100 cycles. First-principles calculations on polymorphic lithium-intercalated structures proposed that the ST12 phase Ge12Lix structures at x ≥ 4 become more thermodynamically stable than the cubic phase Ge8Lix structures with the same stoichiometry. The production and persistence of the ST12 phase can be attributed to a stronger binding interaction of the lithium atoms compared to the cubic phase, which enhanced the cycling performance.

Germanium-tin alloy nanocrystals for high-performance lithium ion batteries.

Germanium-tin (Ge(1-x)Sn(x)) alloy nanocrystals were synthesized using a gas-phase laser photolysis reaction of tetramethyl germanium and tetramethyl tin. A composition tuning was achieved using the partial pressure of precursors in a closed reactor. For x < 0.1, cubic phase alloy nanocrystals were exclusively produced without separation of the tetragonal phase Sn metal. In the range of x = 0.1-0.4, unique Ge(1-x)Sn(x)-Sn alloy-metal hetero-junction nanocrystals were synthesized, where the Sn metal domain becomes dominant with x. Thin graphitic carbon layers usually sheathed the nanocrystals. We investigated the composition-dependent electrochemical properties of these nanocrystals as anode materials of lithium ion batteries. Incorporation of Sn (x = 0.05) significantly increased the capacities (1010 mA h g(-1) after 50 cycles) and rate capabilities, which promises excellent electrode materials for the development of high-performance lithium batteries.

Germanium sulfide(II and IV) nanoparticles for enhanced performance of lithium ion batteries.

Germanium sulfide (GeS and GeS2) nanoparticles were synthesized by novel gas-phase laser photolysis and subsequent thermal annealing. They showed excellent cycling performance for lithium ion batteries, with a maximum capacity of 1010 mA h g(-1) after 100 cycles. Metastable tetragonal phase Ge nanoparticles were suggested as active materials for a reversible lithium insertion-extraction process.

Polymorphism of GeSbTe superlattice nanowires.

Scaling-down of phase change materials to a nanowire (NW) geometry is critical to a fast switching speed of nonvolatile memory devices. Herein, we report novel composition-phase-tuned GeSbTe NWs, synthesized by a chemical vapor transport method, which guarantees promising applications in the field of nanoscale electric devices. As the Sb content increased, they showed a distinctive rhombohedral-cubic-rhombohedral phase evolution. Remarkable superlattice structures were identified for the Ge(8)Sb(2)Te(11), Ge(3)Sb(2)Te(6), Ge(3)Sb(8)Te(6), and Ge(2)Sb(7)Te(4) NWs. The coexisting cubic-rhombohedral phase Ge(3)Sb(2)Te(6) NWs exhibited an exclusively uniform superlattice structure consisting of 2.2 nm period slabs. The rhombohedral phase Ge(3)Sb(8)Te(6) and Ge(2)Sb(7)Te(4) NWs adopted an innovative structure; 3Sb(2) layers intercalated the Ge(3)Sb(2)Te(6) and Ge(2)Sb(1)Te(4) domains, respectively, producing 3.4 and 2.7 nm period slabs. The current-voltage measurement of the individual NW revealed that the vacancy layers of Ge(8)Sb(2)Te(11) and Ge(3)Sb(2)Te(6) decreased the electrical conductivity.

Photo-induced cation exchange reaction of germanium chalcogenide nanocrystals synthesized using gas-phase laser photolysis reaction.

Germanium chalcogenide GeS(x)Se(1-x) nanocrystals (NC) were synthesized using a novel gas-phase laser photolysis reaction. The composition was simply controlled by the partial pressure of precursors in a closed reactor. Remarkably, these ligand-free NC undergo the photo-induced cation exchange reaction to produce a series of Cd, Zn, Pb, and Ag chalcogenide NC in aqueous solution, which is governed by the thermodynamic driving force based on solubility.

Room-temperature ferromagnetism and terahertz emission of Mn-doped InGaAs and GaAsSb nanowires.

Ferromagnetic Mn-doped In(0.05)Ga(0.95)As and GaAs(0.95)Sb(0.05) nanowires were synthesized by chemical vapor transport and their Mn concentration was about 2%. The Mn doped homogeneously into both the single-crystalline zinc blende InGaAs and GaAsSb without the formation of metal clusters. X-ray magnetic circular dichroism and magnetic moment measurements revealed their distinctive room-temperature ferromagnetic behaviors. While the incorporation of In enhances the ferromagnetism, that of Sb reduces it, which can be ascribed to the increase or decrease of the dopant-acceptor hybridization. These GaAs-based NWs exhibit an efficient terahertz emission at room temperature, due to a strong local field enhancement by coherent surface plasmons. The Mn doping significantly enhances the intensity and bandwidth of the terahertz emission, with an excellent correlation with their magnetization.