Effects of Ar Addition to O2 Plasma on Plasma-Enhanced Atomic Layer Deposition of Oxide Thin Films.

A method for significantly increasing the growth rates (GRs) of high- k oxide thin films grown via plasma-enhanced atomic layer deposition (PE-ALD) by enhancing the plasma density through the addition of Ar gas to the O2 plasma oxidant was developed. This approach led to improvements of ∼60% in the saturation GRs of PE-ALD ZrO2, HfO2, and SiO2. Furthermore, despite the significantly higher GR enabled by PE-ALD, the mechanical and dielectric properties of the PE-ALD oxide films were similar or even superior to those of films grown via the conventional O2 plasma process. Optical emission spectroscopy analyses in conjunction with theoretical calculation of the electron energy distribution function revealed that adding Ar gas to the O2 plasma increased the density of high-energy electrons, thereby generating more O2 plasma species, such as ions and radicals, which played a key role in improving the GRs and the properties of the films. This promising approach is expected to facilitate the high-volume manufacturing of films via PE-ALD, especially for use as gate insulators in thin-film transistor-based devices in the display industry.

Enhanced Light Stability of InGaZnO Thin-Film Transistors by Atomic-Layer-Deposited Y2O3 with Ozone.

We report the effect of Y2O3 passivation by atomic layer deposition (ALD) using various oxidants, such as H2O, O2 plasma, and O3, on In-Ga-Zn-O thin-film transistors (IGZO TFTs). A large negative shift in the threshold voltage (Vth) was observed in the case of the TFT subjected to the H2O-ALD Y2O3 process; this shift was caused by a donor effect of negatively charged chemisorbed H2O molecules. In addition, degradation of the IGZO TFT device performance after the O2 plasma-ALD Y2O3 process (field-effect mobility (µ) = 8.7 cm2/(V·s), subthreshold swing (SS) = 0.77 V/dec, and Vth = 3.7 V) was observed, which was attributed to plasma damage on the IGZO surface adversely affecting the stability of the TFT under light illumination. In contrast, the O3-ALD Y2O3 process led to enhanced device stability under light illumination (ΔVth = -1 V after 3 h of illumination) by passivating the subgap defect states in the IGZO surface region. In addition, TFTs with a thicker IGZO film (55 nm, which was the optimum thickness under the current investigation) showed more stable device performance than TFTs with a thinner IGZO film (30 nm) (ΔVth = -0.4 V after 3 h of light illumination) by triggering the recombination of holes diffusing from the IGZO surface to the insulator-channel interface. Therefore, we envisioned that the O3-ALD Y2O3 passivation layer suggested in this paper can improve the photostability of TFTs under light illumination.

Self-Limiting Layer Synthesis of Transition Metal Dichalcogenides.

This work reports the self-limiting synthesis of an atomically thin, two dimensional transition metal dichalcogenides (2D TMDCs) in the form of MoS2. The layer controllability and large area uniformity essential for electronic and optical device applications is achieved through atomic layer deposition in what is named self-limiting layer synthesis (SLS); a process in which the number of layers is determined by temperature rather than process cycles due to the chemically inactive nature of 2D MoS2. Through spectroscopic and microscopic investigation it is demonstrated that SLS is capable of producing MoS2 with a wafer-scale (~10 cm) layer-number uniformity of more than 90%, which when used as the active layer in a top-gated field-effect transistor, produces an on/off ratio as high as 10(8). This process is also shown to be applicable to WSe2, with a PN diode fabricated from a MoS2/WSe2 heterostructure exhibiting gate-tunable rectifying characteristics.

Controllable synthesis of molybdenum tungsten disulfide alloy for vertically composition-controlled multilayer.

The effective synthesis of two-dimensional transition metal dichalcogenides alloy is essential for successful application in electronic and optical devices based on a tunable band gap. Here we show a synthesis process for Mo1-xWxS2 alloy using sulfurization of super-cycle atomic layer deposition Mo1-xWxOy. Various spectroscopic and microscopic results indicate that the synthesized Mo1-xWxS2 alloys have complete mixing of Mo and W atoms and tunable band gap by systematically controlled composition and layer number. Based on this, we synthesize a vertically composition-controlled (VCC) Mo1-xWxS2 multilayer using five continuous super-cycles with different cycle ratios for each super-cycle. Angle-resolved X-ray photoemission spectroscopy, Raman and ultraviolet-visible spectrophotometer results reveal that a VCC Mo1-xWxS2 multilayer has different vertical composition and broadband light absorption with strong interlayer coupling within a VCC Mo1-xWxS2 multilayer. Further, we demonstrate that a VCC Mo1-xWxS2 multilayer photodetector generates three to four times greater photocurrent than MoS2- and WS2-based devices, owing to the broadband light absorption.

Monocyte-based microrobot with chemotactic motility for tumor theragnosis.

Biocompatibility, sensing, and self-actuation are very important features for a therapeutic biomedical microrobot. As a new concept for tumor theragnosis, this paper proposes a monocyte-based microrobots, which are combining the phagocytosis and engulfment activities containing human acute monocytic leukemia cell line (THP-1) with various sized polystyrene microbeads are engulfed instead of a therapeutic drug. For the validation of the blood vessel barrier-penetrating activity of the monocyte-based microrobot, we fabricate a new cell migration assay with monolayer-cultured endothelial cell (HUVEC), similar with the blood vessels. We perform the penetrating chemotactic motility of the monocyte-based microrobot using various types of the chemo-attractants, such as monocyte chemotactic protein (MCP)-1, human breast cancer cell lines (MCF7)-cell lysates, and -contained alginate spheroids. The monocyte-based microrobot show chemotactic transmigrating motilities similar with what an actual monocyte does. This new paradigm of a monocyte-based microrobot having various useful properties such as biocompatibility, sensing, and self-actuation can become the basis of a biomedical microrobot using monocytes for diagnosis and therapy of various diseases.

Fabrication of transferable Al(2)O(3) nanosheet by atomic layer deposition for graphene FET.

Without introducing defects in the monolayer of carbon lattice, the deposition of high-κ dielectric material is a significant challenge because of the difficulty of high-quality oxide nucleation on graphene. Previous investigations of the deposition of high-κ dielectrics on graphene have often reported significant degradation of the electrical properties of graphene. In this study, we report a new way to integrate high-κ dielectrics with graphene by transferring a high-κ dielectric nanosheet onto graphene. Al2O3 film was deposited on a sacrificial layer using an atomic layer deposition process and the Al2O3 nanosheet was fabricated by removing the sacrificial layer. Top-gated graphene field-effect transistors were fabricated and characterized using the Al2O3 nanosheet as a gate dielectric. The top-gated graphene was demonstrated to have a field-effect mobility up to 2200 cm(2)/(V s). This method provides a new method for high-performance graphene devices with broad potential impacts reaching from high-frequency high-speed circuits to flexible electronics.

Layer-controlled, wafer-scale, and conformal synthesis of tungsten disulfide nanosheets using atomic layer deposition.

The synthesis of atomically thin transition-metal disulfides (MS2) with layer controllability and large-area uniformity is an essential requirement for their application in electronic and optical devices. In this work, we describe a process for the synthesis of WS2 nanosheets through the sulfurization of an atomic layer deposition (ALD) WO3 film with systematic layer controllability and wafer-level uniformity. The X-ray photoemission spectroscopy, Raman, and photoluminescence measurements exhibit that the ALD-based WS2 nanosheets have good stoichiometry, clear Raman shift, and bandgap dependence as a function of the number of layers. The electron mobility of the monolayer WS2 measured using a field-effect transistor (FET) with a high-k dielectric gate insulator is shown to be better than that of CVD-grown WS2, and the subthreshold swing is comparable to that of an exfoliated MoS2 FET device. Moreover, by utilizing the high conformality of the ALD process, we have developed a process for the fabrication of WS2 nanotubes.

Synthesis of few-layered graphene nanoballs with copper cores using solid carbon source.

We report the fabrication of graphene-encapsulated nanoballs with copper nanoparticle (Cu NP) cores whose size range from 40 nm to 1 µm using a solid carbon source of poly(methyl methacrylate) (PMMA). The Cu NPs were prone to agglomerate during the annealing process at high temperatures of 800 to 900 °C when gas carbon source such as methane was used for the growth of graphene. On the contrary, the morphologies of the Cu NPs were unchanged during the growth of graphene at the same temperature range when PMMA coating was used. The solid source of PMMA was first converted to amorphous carbon layers through a pyrolysis process at the temperature regime of 400 °C, which prevented the Cu NPs from agglomeration, and they were converted to few-layered graphene (FLG) at the elevated temperatures. Raman and transmission electron microscope analyses confirmed the synthesis of FLG with thickness of approximately 3 nm directly on the surface of the Cu NPs. X-ray diffraction and X-ray photoelectron spectroscopy analyses, along with electrical resistance measurement according to temperature changes showed that the FLG-encapsulated Cu NPs were highly resistant to oxidation even after exposure to severe oxidation conditions.