Bleeding of the Superior Vena Cava Due to an Iatrogenic Injury to It during the Ultrasound-Guided Central Venous Cannulation.

Central venous cannulation (CVC) is a procedure that is frequently performed to facilitate resuscitation, nutritional support and long-term vascular access. It may often cause mechanical complications during placement of a cannula in association with the anatomical relationship with central veins. A 68-year-old man visited our medical institution with a chief complaint of foreign-body-induced esophageal perforation. This patient presented with bleeding of the superior vena cava due to an iatrogenic injury to it during the CVC in the right internal jugular vein. Our case indicates that it would be mandatory to insert a cannula at an optimal depth considering the anatomical relationship between the central veins during the CVC.

FEL performance achieved at PAL-XFEL using a three-chicane bunch compression scheme.

PAL-XFEL utilizes a three-chicane bunch compression (3-BC) scheme (the very first of its kind in operation) for free-electron laser (FEL) operation. The addition of a third bunch compressor allows for more effective mitigation of coherent synchrotron radiation during bunch compression and an increased flexibility of system configuration. Start-to-end simulations of the effects of radiofrequency jitter on the electron beam performance show that using the 3-BC scheme leads to better performance compared with the two-chicane bunch compression scheme. Together with the high performance of the linac radiofrequency system, it enables reliable operation of PAL-XFEL with unprecedented stability in terms of arrival timing, pointing and intensity; an arrival timing jitter of better than 15 fs, a transverse position jitter of smaller than 10% of the photon beam size, and an FEL intensity jitter of smaller than 5% are consistently achieved.

Electromagnon with Sensitive Terahertz Magnetochromism in a Room-Temperature Magnetoelectric Hexaferrite.

An electromagnon in the magnetoelectric (ME) hexaferrite Ba_{0.5}Sr_{2.5}Co_{2}Fe_{24}O_{41} (Co_{2}Z-type) single crystal is identified by time-domain terahertz (THz) spectroscopy. The associated THz resonance is active on the electric field (E^{ω}) of the THz light parallel to the c axis (∥ [001]), whose spectral weight develops at a markedly high temperature, coinciding with a transverse conical magnetic order below 410 K. The resonance frequency of 1.03 THz at 20 K changes -8.7% and +5.8% under external magnetic field (H) of 2 kOe along [001] and [120], respectively. A model Hamiltonian describing the conical magnetic order elucidates that the dynamical ME effect arises from antiphase motion of spins which are coupled with modulating electric dipoles through the exchange striction mechanism. Moreover, the calculated frequency shift points to the key role of the Dzyaloshinskii-Moriya interaction that is altered by static electric polarization change under different H.

Ultrafast photocarrier dynamics related to defect states of Si1-xGex nanowires measured by optical pump-THz probe spectroscopy.

Slightly tapered Si1-xGex nanowires (NWs) (x = 0.29-0.84) were synthesized via a vapor-liquid-solid procedure using Au as a catalyst. We measured the optically excited carrier dynamics of Si1-xGex NWs as a function of Ge content using optical pump-THz probe spectroscopy. The measured -ΔT/T0 signals of Si1-xGex NWs were converted into conductivity in the THz region. We developed a fitting formula to apply to indirect semiconductors such as Si1-xGex, which explains the temporal population of photo-excited carriers in the band structure and the relationship between the trapping time and the defect states on an ultrafast time scale. From the fitting results, we extracted intra- and inter-valley transition times and trapping times of electrons and holes of Si1-xGex NWs as a function of Ge content. On the basis of theoretical reports, we suggest a physical model to interpret the trapping times related to the species of interface defect states located at the oxide/NW: substoichiometric oxide states of Si(Ge)0+,1+,2+, but not Si(Ge)3+, could function as defect states capturing photo-excited electrons or holes and could determine the different trapping times of electrons and holes depending on negatively or neutrally charged states.

Enhancement of carrier lifetime by spin-orbit coupling in a topological insulator of an Sb2Te3 thin film.

Electrons and phonons in chalcogenide-based materials are important factors in the performance of optical data-storage media and thermoelectric devices. However, the fundamental kinetics of carriers in chalcogenide materials remains controversial, and active debate continues over the mechanism responsible for carrier relaxation. In this study, we used optical-pump terahertz-probe spectroscopy, which permits the relationship between structural phase transition and optical property transitions to be examined, to investigate the ultrafast carrier dynamics in a multilayered [Sb(3 Å)/Te(9 Å)]n thin film during the transition from the disordered to crystalline phase. Using terahertz time-domain spectroscopy and a contact-free optical technique, we demonstrated that the optical conductance and carrier concentration vary as functions of annealing temperature. Moreover, we observed that the topological surface state (TSS) affects the enhancement of the carrier lifetime, which is closely related to the degree of spin-orbit coupling (SOC). The combination of the optical technique and proposed carrier relaxation mechanism provides a powerful tool for monitoring TSS and SOC. Consequently, it was determined that the response of the disordered phase is dominated by an electron-phonon coupling effect, while that of the crystalline structure is controlled by a Dirac surface state and SOC effects. These results are important for understanding the fundamental physics of phase change materials and for optimizing and designing materials with better performance in optoelectronic devices.

Tuning the Fermi level with topological phase transition by internal strain in a topological insulator Bi2Se3 thin film.

In a three-dimensional topological insulator Bi2Se3, a stress control for band gap manipulation was predicted but no systematic investigation has been performed yet due to the requirement of large external stress. We report herein on the strain-dependent results for Bi2Se3 films of various thicknesses that are grown via a self-organized ordering process. Using small angle X-ray scattering and Raman spectroscopy, the changes of d-spacings in the crystal structure and phonon vibration shifts resulted from stress are clearly observed when the film thickness is below ten quintuple layers. From the UV photoemission/inverse photoemission spectroscopy (UPS/IPES) results and ab initio calculations, significant changes of the Fermi level and band gap were observed. The deformed band structure also exhibits a Van Hove singularity at specific energies in the UV absorption experiment and ab initio calculations. Our results, including the synthesis of a strained ultrathin topological insulator, suggest a new direction for electronic and spintronic applications for the future.

High-power femtosecond-terahertz pulse induces a wound response in mouse skin.

Terahertz (THz) technology has emerged for biomedical applications such as scanning, molecular spectroscopy, and medical imaging. Although a thorough assessment to predict potential concerns has to precede before practical utilization of THz source, the biological effect of THz radiation is not yet fully understood with scant related investigations. Here, we applied a femtosecond-terahertz (fs-THz) pulse to mouse skin to evaluate non-thermal effects of THz radiation. Analysis of the genome-wide expression profile in fs-THz-irradiated skin indicated that wound responses were predominantly mediated by transforming growth factor-beta (TGF-ß) signaling pathways. We validated NFκB1- and Smad3/4-mediated transcriptional activation in fs-THz-irradiated skin by chromatin immunoprecipitation assay. Repeated fs-THz radiation delayed the closure of mouse skin punch wounds due to up-regulation of TGF-ß. These findings suggest that fs-THz radiation initiate a wound-like signal in skin with increased expression of TGF-ß and activation of its downstream target genes, which perturbs the wound healing process in vivo.

Dielectric relaxation change of water upon phase transition of a lipid bilayer probed by terahertz time domain spectroscopy.

We investigate the influence of the 1, 2-ditetradecanoyl-sn-glycero-3-phosphocholine lipid bilayer phases on the water reorientation dynamics with terahertz time domain spectroscopy. The phase of the lipids was controlled by the temperature in the range of 14-35 °C. During the gel-to-fluid phase transition, the hydration water ratio drastically changed from 0.3 to 0.6. The absorption coefficient of the hydration water increased with the temperature in the gel phase and then decreased in the fluid phase. The dielectric relaxation time of the lipid solution decreased initially but then increased after the phase transition. This indicates that the hydration water reorientation dynamics are restricted by lipids and that this phenomenon is pronounced in a biologically relevant fluid phase.

Note: Recent achievements at the 60-MeV linac for sub-picosecond terahertz radiation at the Pohang Accelerator Laboratory.

A femtosecond (fs) terahertz (THz) linac has been constructed to generate fs-THz radiation by using ultrashort electron beam at the Pohang Accelerator Laboratory. To generate an ultrashort electron beam with 60-MeV energy, a chicane bunch compressor has been adopted. Simulation studies have been conducted to design the linac. In this note, recent achievements at 60-MeV linac are presented.

Generation, transport, and detection of linear accelerator based femtosecond-terahertz pulses.

The generation and detection of intense terahertz (THz) radiation has drawn a great attention recently. The dramatically enhanced energy and peak electric field of the coherent THz radiation can be generated by coherent superposition of radiated fields emitted by ultrafast electron bunches. The femtosecond (fs)-THz beamline construction at the Pohang Accelerator Laboratory (PAL) was completed in the end of 2009. The fs-THz beamline at PAL can supply ultrafast and intense fs-THz radiation from a 75 MeV linear accelerator. The radiation is expected to have frequency up to 3 THz (∼100 cm(-1)) and the pulse width of <200 fs with pulse energy up to 10 µJ. This intense THz source has great potential for applications in nonlinear optical phenomena and fields such as material science, biomedical science, chemistry, and physics, etc.