ABSTRACT
α-In2Se3 semiconductor crystals realize artificial synapses by tuning in-plane and out-of-plane ferroelectricity with diverse avenues of electrical and optical pulses. While the electrically induced ferroelectricity of α-In2Se3 shows synaptic memory operation, the optically assisted synaptic plasticity in α-In2Se3 has also been preferred for polarization flipping enhancement. Here, the synaptic memory behavior of α-In2Se3 is demonstrated by applying electrical gate voltages under white light. As a result, the induced internal electric field is identified at a polarization flipped conductance channel in α-In2Se3/hexagonal boron nitride (hBN) heterostructure ferroelectric field effect transistors (FeFETs) under white light and discuss the contribution of this built-in electric field on synapse characterization. The biased dipoles in α-In2Se3 toward potentiation polarization direction by an enhanced internal built-in electric field under illumination of white light lead to improvement of linearity for long-term depression curves with proper electric spikes. Consequently, upon applying appropriate electric spikes to α-In2Se3/hBN FeFETs with illuminating white light, the recognition accuracy values significantly through the artificial learning simulation is elevated for discriminating hand-written digit number images.
ABSTRACT
The demand for fast-charging lithium-ion batteries (LIBs) with long cycle life is growing rapidly due to the increasing use of electric vehicles (EVs) and energy storage systems (ESSs). Meeting this demand requires the development of advanced anode materials with improved rate capabilities and cycling stability. Graphite is a widely used anode material for LIBs due to its stable cycling performance and high reversibility. However, the sluggish kinetics and lithium plating on the graphite anode during high-rate charging conditions hinder the development of fast-charging LIBs. In this work, we report on a facile hydrothermal method to achieve three-dimensional (3D) flower-like MoS2 nanosheets grown on the surface of graphite as anode materials with high capacity and high power for LIBs. The composite of artificial graphite decorated with varying amounts of MoS2 nanosheets, denoted as MoS2@AG composites, deliver excellent rate performance and cycling stability. The 20-MoS2@AG composite exhibits high reversible cycle stability (~463 mAh g-1 at 200 mA g-1 after 100 cycles), excellent rate capability, and a stable cycle life at the high current density of 1200 mA g-1 over 300 cycles. We demonstrate that the MoS2-nanosheets-decorated graphite composites synthesized via a simple method have significant potential for the development of fast-charging LIBs with improved rate capabilities and interfacial kinetics.
