Geometrical structure and interface dependence of bias stress induced threshold voltage shift in C60-based OFETs.

The influence of the nature of interface between organic semiconductor and gate dielectric on bias stress electrical stability of n-type C60-based organic field effect transistors (OFETs) was studied. The bias stress induced threshold voltage (Vth) shift was found to depend critically on the OFET device structure: the direction of V(th) shift in top-gate OFETs was opposite to that in bottom-gate OFETs, while the use of the dual-gate OFET structure resulted in just very small variations in V(th). The opposite direction of Vth shift is attributed to the different nature of interfaces between C60 semiconductor and Parylene dielectric in these devices. The V(th) shift to more positive voltages upon bias stress in bottom-gate C60-OFET was similar to that observed for other n-type semiconductors and rationalized by electron trapping in the dielectric or at the gate dielectric/C60 interface. The opposite direction of Vth shift in top-gate C60-OFETs is attributed to free radical species created in the course of Parylene deposition on the surface of C60 during device fabrication, which produce plenty of hole traps. It was also realized that the dual-gate OFETs gives stable characteristics, which are immune to bias stress effects.

Electric field confinement effect on charge transport in organic field-effect transistors.

While it is known that the charge-carrier mobility in organic semiconductors is only weakly dependent on the electric field at low fields, the experimental mobility in organic field-effect transistors using silylethynyl-substituted pentacene is found to be surprisingly field dependent at low source-drain fields. Corroborated by scanning Kelvin probe measurements, we explain this observation by the severe difference between local conductivities within grains and at grain boundaries. Redistribution of accumulated charges creates very strong local lateral fields in the latter regions. We further confirm this picture by verifying that the charge mobility in channels having no grain boundaries, made from the same organic semiconductor, is not significantly field dependent. We show that our model allows us to quantitatively model the source-drain field dependence of the mobility in polycrystalline organic transistors.

Triplet excitation scavenging in films of conjugated polymers.

Phosphorescence and delayed fluorescence of polyfluorene polymer films doped with cyclooctatetraene (COT) and anthracene are studied by means of time-resolved photoluminescence (PL) measurements. The occurrence of an anomalous nonvertical triplet energy transfer in solid conjugated polymer films is demonstrated for the first time employing the "nonvertical" COT triplet acceptor, which appears to behave similarly to conventional vertical triplet acceptors, such as anthracene. Both dopant molecules are found to efficiently quench the host phosphorescence of the polymer without affecting the host fluorescence--this can be attributed to the large singlet-triplet (S(1)-T(1)) splitting of these molecules. This S(1)-T(1) splitting is exceptionally large in COT due to its low-lying relaxed triplet state, which is capable of accepting host triplet excitations. In contrast to anthracene, the triplet lifetime of the COT molecules is reasonably short, thus making a fast deactivation of the triplet excitations possible. This suggests that nonvertical triplet scavengers might be promising candidates for quenching the host triplet excitations in future electrically pumped fluorescence organic lasers, which suffer from excessive triplet-state losses.