Semiconductor quantized voltage source.

We realize and investigate an all-semiconductor quantized voltage source which generates quantized output voltages V(out) = f(h/e) linked only to two fundamental constants, the electron's charge e and Planck's constant h, and to an applied excitation frequency f. The device is based on an integrated quantized circuit of a single-electron pump operated at pumping frequency f and a quantum Hall device monolithically integrated in series. Robust output voltages up to several µV are generated, which are expected to be scalable by orders of magnitude using present technology. The device might open a new route towards the closure of the quantum metrology triangle.

Coulomb blockade anisotropic magnetoresistance effect in a (Ga,Mn)As single-electron transistor.

We observe low-field hysteretic magnetoresistance in a (Ga,Mn)As single-electron transistor which can exceed 3 orders of magnitude. The sign and size of the magnetoresistance signal are controlled by the gate voltage. Experimental data are interpreted in terms of electrochemical shifts associated with magnetization rotations. This Coulomb blockade anisotropic magnetoresistance is distinct from previously observed anisotropic magnetoresistance effects as it occurs when the anisotropy in a band structure derived parameter is comparable to an independent scale, the single-electron charging energy. Effective kinetic-exchange model calculations in (Ga,Mn)As show chemical potential anisotropies consistent with experiment and ab initio calculations in transition metal systems suggest that this generic effect persists to high temperatures in metal ferromagnets with strong spin-orbit coupling.

Experimental observation of the spin-Hall effect in a two-dimensional spin-orbit coupled semiconductor system.

We report the experimental observation of the spin-Hall effect in a 2D hole system with spin-orbit coupling. The 2D hole layer is a part of a p-n junction light-emitting diode with a specially designed coplanar geometry which allows an angle-resolved polarization detection at opposite edges of the 2D hole system. In equilibrium the angular momenta of the spin-orbit split heavy-hole states lie in the plane of the 2D layer. When an electric field is applied across the hole channel, a nonzero out-of-plane component of the angular momentum is detected whose sign depends on the sign of the electric field and is opposite for the two edges. Microscopic quantum transport calculations show only a weak effect of disorder, suggesting that the clean limit spin-Hall conductance description (intrinsic spin-Hall effect) might apply to our system.