ABSTRACT
We report on the design and experimental demonstration of a system based on an L3 cavity coupled to a photonic crystal waveguide for in-plane single-photon emission. A theoretical and experimental investigation for all the cavity modes within the photonic bandgap is presented for stand-alone L3 cavity structures. We provide a detailed discussion supported by finite-difference time-domain calculations of the evanescent coupling of an L3 cavity to a photonic crystal waveguide for on-chip single-photon transmission. Such a system is demonstrated experimentally by the in-plane transmission of quantum light from an InAs quantum dot coupled to the L3 cavity mode.
Subject(s)
Lighting/instrumentation , Surface Plasmon Resonance/instrumentation , Computer-Aided Design , Equipment Design , Equipment Failure Analysis , Light , PhotonsABSTRACT
Blinking and spectral diffusion are hallmarks of nanoscale light emitters and a challenge for creating stable fluorescent biomarkers or efficient nonclassical light sources. Here, we demonstrate suppression of blinking and spectral diffusion of individual single-wall carbon nanotubes by manipulation of their dielectric environment, resulting in 5-fold enhanced light emission. In addition, it was found that the characteristic slopes of the blinking power laws are largely independent of the dielectric environment in the limit of a large number of switching events. In contrast, the on/off ratio determined from statistical occurrence analysis is found to be improved by 3 orders of magnitude toward the on state, making the on/off ratio an important measure for charge transfer from/into the local dielectric environment of a quantum emitter. Furthermore, our approach is compatible with integration into cavities, in contrast to previous demonstrations of spectral diffusion suppression achieved in free-standing single-wall carbon nanotubes. This opens up possibilities to couple the exciton emission of nonblinking carbon nanotubes to cavity modes to further benefit by the Purcell effect and to enhance the light extraction efficiency, in order to ultimately demonstrate efficient photonic devices.
ABSTRACT
Optical control of the lateral quantum confinement and number of electrons confined in nanofabricated GaAs/AlGaAs quantum dots is achieved by illumination with a weak laser beam that is absorbed in the AlGaAs barrier. Precise tuning of energy-level structure and electron population is demonstrated by monitoring the low-lying transitions of the electrons from the lowest quantum-dot energy shells by resonant inelastic light scattering. These findings open the way to the manipulation of single electrons in these quantum dots without the need of external metallic gates.