Optical spectra and band structure of Ag(x)Ga(x)Ge(1-x)Se2 (x = 0.333, 0.250, 0.200, 0.167) single crystals: experiment and theory.

Theoretical and experimental studies of the Ag(x)Ga(x)Ge(1-x)Se2 (x = 0.333, 0.250, 0.200, 0.167) single crystals are performed. These crystals possess a lot of intrinsic defects which are responsible for their optoelectronic features. The theoretical investigations were performed by means of DFT calculations using different exchange-correlation potentials. The experimental studies were carried out using the modulated VUV ellipsometry for dielectric constants and birefringence studies. The comparison of the structure obtained from X-ray with the theoretically optimized structure is presented. The crucial role of the intrinsic defect states is manifested in the choice of the exchange correlation potential used. The data may be applicable for a large number of the ternary chalcogenides which are sensitive to the presence of the local disordered states near the band edges.

Linear and nonlinear optical susceptibilities and the hyperpolarizability of borate LiBaB9O15 single-crystal: theory and experiment.

The single-crystal borate LiBaB9O15 was synthesized by a high-temperature solution reaction and structurally determined by the single-crystal X-ray diffraction technique. It crystallizes in the noncentrosymmetric space group R3c and features a three-dimensional ∞3[B9O15]3­ anionic framework, with infinite channels in which the Li+ and Ba2+ cations are located. The linear optical properties were investigated experimentally in terms of the absorption spectrum, which reveals an optical gap of 5.17 eV. In addition we have calculated the linear optical properties using state-of-the-art all-electron full potential linearized augmented plane wave method. The nonlinear optical susceptibilities, namely, the second harmonic generation and the hyperpolarizability of the single-crystal borate LiBaB9O15 are calculated and evaluated at a static limit and at λ = 1064 nm. The calculation shows there exists three second-order nonlinear optical susceptiblities tensors components. We present measurements of the IR spectra in the range 500­2000 cm­1, and the second harmonic generation was performed using a Quantel 15 ns Nd:YAG laser operating at 1064 nm.

Linear, non-linear optical susceptibilities and the hyperpolarizability of the mixed crystals Ag(0.5)Pb(1.75)Ge(S(1-x)Se(x))4: experiment and theory.

As the starting point for a comprehensive theoretical investigation of the linear and nonlinear optical susceptibilities, we have used our experimental crystallographic data for Ag0.5Pb1.75GeS3Se (Ag2Pb7Ge4S12Se4) reported. The experimental crystallographic positions were optimized by minimizing the forces acting on each atom to get meaningful theoretical predictions of the optical properties. The linear optical susceptibilities are calculated. We find that the optical band gap shows very good agreement with our measured gap. The second-order nonlinear optical (NLO) susceptibilities dispersion namely the optical second harmonic generation (SHG) is calculated and compared with our experimental measurements. The microscopic first order hyperpolarizability, ß123, vector component along the principal dipole moment directions for the χ((2))(123)(ω) component was obtained theoretically and compared with our measured values at different temperatures. The dependence of the two-photon absorption (TPA) for the pump-probing at SHG of the microsecond CO2 laser was measured. In addition we explored the linear electro-optical effect in these crystals. This effect is described by the third rank polar tensors similarly to the SHG. However, for the Pockels effect besides the electronic contribution, the phonon subsystem also begins to play a principal role. As a consequence we study the dispersion of the linear electro-optical effects in the mentioned crystals.

Photoelectrical properties and the electronic structure of Tl(1-x)In(1-x)Sn(x)Se2 (x = 0, 0.1, 0.2, 0.25) single crystalline alloys.

Photoelectrical properties of Tl1-xIn1-xSnxSe2 single crystalline alloys (x = 0, 0.1, 0.2, 0.25) grown using the Bridgman-Stockbarger method were studied. The temperature dependence of electrical and photoconductivity for the Tl1-xIn1-xSnxSe2 single crystals was explored. It has been established that photosensitivity of the Tl1-xIn1-xSnxSe2 single crystals increases with x. The spectral distribution of photocurrent in the wavelength spectral range 400-1000 nm has been investigated at various temperatures. Photoconductivity increases in all the studied crystals with temperature. Therefore, thermal activation of photoconductivity is caused by re-charging of the photoactive centers as the samples are heated. Based on our investigations, a model of center re-charging is proposed that explains the observed phenomena. X-ray photoelectron valence-band spectra for pristine and Ar(+)-ion irradiated surfaces of the Tl1-xIn1-xSnxSe2 single crystals have been measured. These results reveal that the Tl1-xIn1-xSnxSe2 single-crystal surface is sensitive to the Ar(+) ion irradiation that induced structural modification in the top surface layers. Comparison on a common energy scale of the X-ray emission Se Kß2 bands representing energy distribution of the Se 4p-like states and the X-ray photoelectron valence-band spectra was done.

Influence of replacing Si by Ge in the chalcogenide quaternary sulfides Ag2In2Si(Ge)S6 on the chemical bonding, linear and nonlinear optical susceptibilities, and hyperpolarizability.

The linear and nonlinear optical properties of Ag2In2SiS6 and Ag2In2GeS6 are calculated so as to obtain further insight into the electronic properties. The influence of using different exchange correlation potentials and the effect of replacing Si by Ge on the geometry, chemical bonding, and on the optical properties are presented. There is notable increasing in the energy band gap when moving from LDA to GGA, EVGGA then to mBJ. The effect of replacing Si by Ge atom causes a geometric change, which leads to large changes in the linear as well as the nonlinear optical susceptibilities. For the linear optical properties, it causes to increase the amplitude of the left-hand hump of ε(2)(average)(ω) as well as a small shift of the main peak to lower energies. We have evaluated ε(1)(average)(0) and find that a smaller energy gap yields a larger ε1(0) value. From the calculated refractive indices we obtained the birefringence, which is important for second harmonic generation (SHG) and optical parametric oscillation (OPO) as it is defined by the phase-matching condition. The second-order nonlinear optical susceptibilities, namely, the SHG are investigated for χ(111)(2)(ω), χ(122)(2)(ω), χ(133)(2)(ω), χ(221)(2)(ω), and χ(331)(2)(ω). We find that χ(111)(2)(ω) is the dominant component. The microscopic second order hyperpolarizability, ß111, for the dominant component χ(111)(2)(ω) was obtained. We should emphasize that replacing Si by Ge enhances the linear and nonlinear optical susceptibilities so that Ag2In2GeS6 shows higher values of the linear and nonlinear optical susceptibilities and ß111 in comparison to Ag2In2SiS6.

Dispersion of linear, nonlinear optical susceptibilities and hyperpolarizability of C11H8N2O (o-methoxydicyanovinylbenzene) crystals.

Linear and nonlinear optical susceptibility dispersion and hyperpolarizability of C(11)H(8)N(2)O, o-methoxydicyanovinylbenzene, crystals were performed by means of density functional theory (DFT). The exchange and correlation potential was described within a framework of the local density approximation (CA-LDA) and gradient approximation (GGA) based on exchange-correlation energy optimization to calculate the total energy. Engel-Vosko generalized gradient approximation (EV-GGA) and the modified Becke-Johnson potential (mBJ) were used for the electronic crystal structure and optical susceptibility dispersion calculations. We have established systematically increasing energy gap from 2.25 eV (LDA), 2.34 eV (GGA), 2.50 eV (EVGGA), and 2.96 eV (mBJ). The crystal possesses a direct band gap which is an important key factor to make the crystal optically active with high linear and nonlinear optical susceptibilities and hyperpolarizability. Additionally, the studied crystal has a considerable anisotropy of birefringence which is necessary for phase matching conditions during the optical second harmonicexperiments. We have found that the theoretically evaluated second harmonic generation achieves about 5.8 × 10(-8) esu in good agreement with the experimental value (4.9 × 10(-8) esu). Additionally, we have found that our calculated value of ß(222) is about 2.3 × 10(-30) esu at zero energy and 6.6 × 10(-30) esu at λ = 1.064 µm. We should emphasize that our calculated value of ß(222) (6.60 × 10(-30) esu at λ = 1.064 µm) shows better agreement with the experimental data (5.04 × 10(-30) esu at λ = 1.064 µm) than other calculations.

Absorption and photoconductivity spectra of Ag2GeS3 crystal: experiment and theory.

Spectral features of polycrystalline Ag(2)GeS(3) samples synthesized from high-purity elements (at least 99.99 wt.% purity) in quartz ampoules evacuated to 0.1 Pa were explored. The band energy gap of Ag(2)GeS(3) crystals estimated from the fundamental absorption edge and photoconductivity spectra were found to be equal to 1.98 eV and 2.16 eV, respectively. Simultaneously we have performed calculations of the band structure, total and partial density of states and the electron charge density using the ab initio FP-LAPW method. All the calculations were performed with four different exchange-correlation (xc) potentials. It was found that the effect of using different xc is very marginal on the valence band maximum (VBM) while it is dramatically shifted the conduction band minimum (CBM) towards higher energies with respect to the Fermi energy position. Our theoretical results have given a band energy gap equal to 0.40 eV (for LDA), 0.42 eV (GGA), 1.03 eV (EVGGA) and 1.30 eV (mBJ) xc potentials. Thus the underestimation of the energy gap in LDA and GGA was partially corrected in EVGGA and mBJ model. As a remarkable fact mBJ did not bring the energy band gap very close to the experimental once. We have discovered that the Ag-s states have only a small effect on the conduction bands shifts whereas Ge-s states have a strong effect in extending of the gap, while remaining the valence bands unchanged.

Acentric nonlinear optical 2,4-dihydroxyl hydrazone isomorphic crystals with large linear, nonlinear optical susceptibilities and hyperpolarizability.

A systematic ab initio study of the linear, nonlinear optical susceptibilities, and hyperpolarizability of noncentrosymmetric-monoclinic 2,4-dihydroxyl hydrazone isomorphic crystals (DHNPH) within density functional theory in the local density approximation (LDA), general gradient approximation (GGA), the Engel-Vosko generalized gradient approximation (EV-GGA) and modified Becke-Johnson potential (mBJ) has been performed. The complex dielectric susceptibility dispersion, its zero-frequency limit and the birefringence are studied. Using scissors' corrected mBJ we find a large uniaxial dielectric anisotropy (-0.56) resulting in a significant birefringence (0.61). We also find that 2,4- DHNPH possess large second harmonic generation. The calculated second order susceptibility tensor components for the static limit |χ(111)(2)(0)| and |χ(111)(2)(ω)| at λ=1.9 µm (0.651 eV) and at λ = 1.064 µm (1.165 eV) are 53, 91, and 209 pm/V, respectively. A remarkable finding, applying the scissors' correction has a profound effect on value, magnitude and sign of χ(ijk)(2)(ω). In additional we have calculated the microscopic hyperpolarizability, ß(111), vector component along the principal dipole moment directions for the dominant component. We find that the value of ß(111) equal to 47× 10(-30) esu, in good agreement with the measured value (48.2× 10(-30) esu).

Second harmonic generation and hyperpolarizabilities of the double-cubane compound [Sb7S8Br2](AlCl4)3: chalcogenide in ionic liquids.

Because noncentrosymmetric [Sb7S8Br2](AlCl4)3 single crystals possess a wide optical transparency region, it is a promising material for nonlinear optical applications. We have calculated the dispersion of linear and nonlinear optical susceptibilities including optical second harmonic generation (SHG) using a relaxed geometry. We find that the fundamental optical absorption edge situated at about 2.03 eV is in excellent agreement with the experimental data. Calculations of ε(2)(xx)(ω), ε(2)(yy)(ω), and ε(2)(zz)(ω) tensor components of the frequency-dependent dielectric function are presented. The single crystal possesses a considerable anisotropy of linear optical susceptibilities, which usually favors an enhanced phase matching conditions necessary to observe SHG and optical parametric oscillator (OPO) effects. Our calculations show that, in [Sb7S8Br2](AlCl4)3, |χ123(2)(ω)| is the principal tensor component having the highest value of SHG at zero frequency limit as well as at 1.165 eV (λ = 1064 nm) laser wavelength generation. The microscopic second-order hyperpolarizability, ß123, of the dominant SHG component is calculated at the static limit and at λ = 1064 nm.