Synthesis of multiphase MoS2 heterostructures using temperature-controlled plasma-sulfurization for photodetector applications.

Two-dimensional (2D) materials exhibit outstanding performance in photodetectors because of their excellent optical and electronic properties. Specifically, 2D-MoS2, a transition metal dichalcogenide, is a prominent candidate for flexible and portable photodetectors based on its inherent phase-dependent tunable optical band gap properties. This research focused on creating high-performance photodetectors by carefully arranging out-of-plane 2D heterostructures. The process involved stacking different phases of MoS2 (1T and 2H) using controlled temperature during plasma-enhanced chemical vapor deposition. Among the various phase combinations, the best photocurrent response was obtained for the 1T/2H-MoS2 heterostructure, which exhibited an approximately two-fold higher photocurrent than the 2H/1T-MoS2 heterostructure and 2H/2H-MoS2 monostructure. The 1T/2H-MoS2 heterostructure exhibited a higher photoresponse than the monostructured MoS2 of the same thickness (1T/1T- and 2H/2H-MoS2, respectively). The effect of the stacking sequences of different phases was examined, and their photoperformances were investigated. This study demonstrates that phase engineering in 2D-MoS2 van der Waals heterostructures has significant potential for developing high-performance photodetectors.

Low-Temperature and Large-Scale Production of a Transition Metal Sulfide Vertical Heterostructure and Its Application for Photodetectors.

The conventional synthesis of two-dimensional (2D) transition metal dichalcogenide (TMDC) heterostructures is low yielding and lack the heterojunction interface quality. The chemical vapor deposition (CVD) techniques have achieved high-quality heterostructure interfaces but require a high synthesis temperature (>600 °C) and have a low yield of heterostructures. Therefore, the large scale and high interface quality of TMDC heterojunctions using low-temperature synthesis methods are in demand. Here, high-quality, wafer-scale MoS2 and WS2 heterostructures with 2D interfaces were prepared by a one-step sulfurization of the molybdenum (Mo) and tungsten (W) precursors via plasma-enhanced CVD at a relatively low temperature (150 °C). The 4 inch wafer-scale synthesis of the MoS2-WS2 heterostructures was validated using various spectroscopic and microscopic techniques. Further, the photocurrent generation and photoswitching phenomenon of the so-obtained MoS2-WS2 heterostructures were studied. The photodevice prepared by the MoS2-WS2 heterostructures at 150 °C showed a photoresponsivity of 83.75 mA/W. The excellent photoresponse and faster photoswitching highlight the advantage of MoS2-WS2 heterostructures toward advanced photodetectors.

Low-Temperature Synthesis of Wafer-Scale MoS2-WS2 Vertical Heterostructures by Single-Step Penetrative Plasma Sulfurization.

Two-dimensional (2D) transition metal dichalcogenides (TMDs) have attracted considerable attention owing to their synergetic effects with other 2D materials, such as graphene and hexagonal boron nitride, in TMD-based heterostructures. Therefore, it is important to understand the physical properties of TMD-TMD vertical heterostructures for their applications in next-generation electronic devices. However, the conventional synthesis process of TMD-TMD heterostructures has some critical limitations, such as nonreproducibility and low yield. In this paper, we synthesize wafer-scale MoS2-WS2 vertical heterostructures (MWVHs) using plasma-enhanced chemical vapor deposition (PE-CVD) via penetrative single-step sulfurization discovered by time-dependent analysis. This method is available for fabricating uniform large-area vertical heterostructures (4 in.) at a low temperature (300 °C). MWVHs were characterized using various spectroscopic and microscopic techniques, which revealed their uniform nanoscale polycrystallinity and the presence of vertical layers of MoS2 and WS2. In addition, wafer-scale MWVHs diodes were fabricated and demonstrated uniform performance by current mapping. Furthermore, mode I fracture tests were performed using large double cantilever beam specimens to confirm the separation of the MWVHs from the SiO2/Si substrate. Therefore, this study proposes a synthesis mechanism for TMD-TMD heterostructures and provides a fundamental understanding of the interfacial properties of TMD-TMD vertical heterostructures.

Hierarchical nanostructures of nitrogen-doped molybdenum sulphide for supercapacitors.

Flower-like nanostructures of molybdenum disulphide (MoS2) have been effectively synthesised by the hydrothermal method and further doped with nitrogen using varying concentrations of urea. The formed hierarchical nanostructures are characterised by spectroscopy as well as electrochemical techniques. The structural analysis confirms the formation of a hexagonal MoS2 crystal structure. The existence of MoO2/MoO3/MoS2 composites is also observed after heating MoS2 with a lower urea concentration. Surface morphological analysis of all the prepared compositions shows the appearance of flower-like nanostructures formed by the stacking of 20-80 nanosheets to create individual flower petals. Nitrogen doping shows enhancement in the specific capacitance of MoS2 due to an increase in the electronic conductivity. Furthermore, the specific capacitance is enhanced due to the formation of an MoO2/MoO3/MoS2 composite. The highest specific capacitance calculated from the charge-discharge curve for nitrogen-doped MoS2 prepared using 1 : 1 (MoS2 : urea) weight ratio is observed at around 129 (F g-1) at 2 (A g-1) specific current. The nitrogen-doped MoS2 demonstrates almost four-fold enhancement in specific capacitance than pristine nano-shaped MoS2.