Tailoring Structural, Chemical, and Photocatalytic Properties of ZnO@ß-SiC Composites: The Effect of Annealing Temperature and Environment.

For achieving unified functionalities of rare-earth free materials, the development of innovative zinc oxide and ß-silicon carbide (ZnO@ß-SiC) composites by a solid-state reaction method is presented. The evolution of zinc silicate (Zn2SiO4) is evidenced by X-ray diffraction when annealed in air beyond 700 °C. Detailed X-ray photoelectron spectroscopy and Fourier transform infrared spectroscopy analyses reveal the involvement of silicon dioxide in forming Zn2SiO4. Transmission electron microscopy and the associated energy-dispersive X-ray spectroscopy elucidate the evolution of the zinc silicate phase at the ZnO/ß-SiC interface, though it can be averted by vacuum annealing. These results manifest the importance of air in oxidizing SiC before a chemical reaction with ZnO from 700 °C. Finally, ZnO@ß-SiC composites are found to be promising for methylene blue dye degradation under ultraviolet radiation, but the annealing above 700 °C is detrimental due to the evolution of a potential barrier in the presence of Zn2SiO4 at the ZnO/ß-SiC interface.

Aliovalent Ta-Doping-Engineered Oxygen Vacancy Configurations for Ultralow-Voltage Resistive Memory Devices: A DFT-Supported Experimental Study.

Alteration of transport properties of any material, especially metal oxides, by doping suitable impurities is not straightforward as it may introduce multiple defects like oxygen vacancies (Vo) in the system. It plays a decisive role in controlling the resistive switching (RS) performance of metal oxide-based memory devices. Therefore, a judicious choice of dopants and their atomic concentrations is crucial for achieving an optimum Vo configuration. Here, we show that the rational designing of RS memory devices with cationic dopants (Ta), in particular, Au/Ti1-xTaxO2-δ/Pt devices, is promising for the upcoming non-volatile memory technology. Indeed, a current window of ∼104 is realized at an ultralow voltage as low as 0.25 V with significant retention (∼104 s) and endurance (∼105 cycles) of the device by considering 1.11 at % Ta doping. The obtained device parameters are compared with those in the available literature to establish its excellent performance. Furthermore, using detailed experimental analyses and density functional theory (DFT)-based first-principles calculations, we comprehend that the meticulous presence of Vo configurations and the columnar-like dendritic structures is crucial for achieving ultralow-voltage bipolar RS characteristics. In fact, the dopant-mediated Vo interactions are found to be responsible for the enhancement in local current conduction, as evidenced from the DFT-simulated electron localization function plots, and these, in turn, augment the device performance. Overall, the present study on cationic-dopant-controlled defect engineering could pave a neoteric direction for future energy-efficient oxide memristors.

Crucial role of oxygen on the bulk and surface electronic properties of stable ß phase of tungsten.

The A15 ß phase of tungsten has recently attracted great interest for spintronic applications due to the finding of giant spin-Hall effect. As ß phase is stabilized by oxygen, we have studied the electronic structure of O-doped ß-W from first principles calculations. It is found that 20 at.% O-doping makes ß phase lower in energy than α-W. These results are in good agreement with energy dispersive X-ray spectroscopy which also shows ~ 16.84 at.% O in 60 nm thick W films. The latter has predominantly ß phase as confirmed by grazing incidence X-ray diffraction (XRD). The simulated XRD of bulk ß having 15.79 at.% O also agrees with XRD results. Oxygen binds strongly on the surface and affects the Dirac fermion behavior in pure ß-W. There is structural disorder, O-inhomogeneity, and higher density-of-states in O-doped ß-W at EF compared with pure α. These results are promising to understand the properties of ß-W.

Unravelling oxygen driven α to ß phase transformation in tungsten.

Thin films of ß-W are the most interesting for manipulating magnetic moments using spin-orbit torques, and a clear understanding of α to ß phase transition in W by doping impurity, especially oxygen, is needed. Here we present a combined experimental and theoretical study using grazing incidence X-ray diffraction, photoelectron spectroscopy, electron microscopy, and ab initio calculations to explore atomic structure, bonding, and oxygen content for understanding the formation of ß-W. It is found that the W films on SiO2/Si have 13-22 at.% oxygen in A15 ß structure. Ab initio calculations show higher solution energy of oxygen in ß-W, and a tendency to transform locally from α to ß phase with increasing oxygen concentration. X-ray absorption spectroscopy also revealed local geometry of oxygen in ß-W, in agreement with the simulated one. These results offer an opportunity for a fundamental understanding of the structural transition in α-W and further development of ß-W phase for device applications.

Induced Vacancy-Assisted Filamentary Resistive Switching Device Based on RbPbI3-xClx Perovskite for RRAM Application.

Halide perovskite (HP) materials are actively researched for resistive switching (RS) memory devices due to their current-voltage hysteresis along with low-temperature processability, superior charge mobility, and simple fabrication. In this study, all-inorganic RbPbI3 perovskite has been doped with Cl in the halide site and incorporated as a switching media in the Ag/RbPbI3-xClx/ITO structure, since pure RbPbI3 is nonswitchable. Five compositions of the RbPbI3-xClx (x = 0, 0.3, 0.6, 0.9, and 1.2) films are fabricated, and the conductivity was found to be increasing upon increase in Cl concentration, as revealed by dielectric and I-V measurements. The device with a 20% chloride-substituted film exhibits a higher on/off ratio, extended endurance, long retention, and high-density storage ability. Finally, a plausible explanation of the switching mechanism from iodine vacancy-mediated growth of conducting filaments (CFs) is provided using conductive atomic force microscopy (c-AFM). The c-AFM measurements reveal that pure RbPbI3 is insulating in nature, whereas Cl-doped films demonstrate resistive switching behavior.

Single-step grown boron doped nanocrystalline diamond-carbon nanograss hybrid as an efficient supercapacitor electrode.

Direct synthesis of a nano-structured carbon hybrid consisting of vertically aligned carbon nanograsses on top of boron-doped nanocrystalline diamond is demonstrated and the carbon hybrid is further applied as an electrode material for the fabrication of supercapacitors. The hybrid film combines the dual advantages of sp2 (carbon nanograss) and sp3 (nanocrystalline diamond) bonded carbon, possessing not only the excellent electrical characteristics of sp2 carbon but also the exceptional electrochemical stability of sp3 carbon. As a result, the specific capacitance of the as-prepared hybrid material reaches up to 0.4 F cm-2, one of the highest reported in diamond-based supercapacitors. The entire electrochemical results exhibit enhanced electron transfer efficiency with remarkable stability of 95% of capacitance retention even after 10 000 cycles.

Tunable antireflection from conformal Al-doped ZnO films on nanofaceted Si templates.

Photon harvesting by reducing reflection loss is the basis of photovoltaic devices. Here, we show the efficacy of Al-doped ZnO (AZO) overlayer on ion beam-synthesized nanofaceted silicon for suppressing reflection loss. In particular, we demonstrate thickness-dependent tunable antireflection (AR) from conformally grown AZO layer, showing a systematic shift in the reflection minima from ultraviolet to visible to near-infrared ranges with increasing thickness. Tunable AR property is understood in light of depth-dependent refractive index of nanofaceted silicon and AZO overlayer. This improved AR property significantly increases the fill factor of such textured heterostructures, which reaches its maximum for 60-nm AZO compared to the ones based on planar silicon. This thickness matches with the one that shows the maximum reduction in surface reflectance. PACS: 81.07.-b; 42.79.Wc; 81.16.Rf; 81.15.Cd.

n-InAs nanopyramids fully integrated into silicon.

InAs with an extremely high electron mobility (up to 40,000 cm(2)/V s) seems to be the most suitable candidate for better electronic devices performance. Here we present a synthesis of inverted crystalline InAs nanopyramids (NPs) in silicon using a combined hot ion implantation and millisecond flash lamp annealing techniques. Conventional selective etching was used to form the InAs/Si heterojunction. The current-voltage measurement confirms the heterojunction diode formation with the ideality factor of η = 4.6. Kelvin probe force microscopy measurements indicate a type-II band alignment of n-type InAs NPs on p-type silicon. The main advantage of our method is its integration with large-scale silicon technology, which also allows applying it for Si-based electronic devices.

Electronic states of a single layer of pentacene: standing-up and flat-lying configurations.

The electronic properties of a single layer (SL) of pentacene molecules are investigated by high-resolution UV photoemission and near-edge X-ray absorption spectroscopy in different configurations of the SL, either standing up on an aromatic self-assembled monolayer or planar on a bare Cu(001) substrate. The weakly interacting pentacene molecules in the standing-up SL present a semiconducting character, and the empty states distribution reflects that of gas-phase pentacene, while the planar pentacene-Cu system shows a metallic interface with redistribution of the empty molecular states. The highest-occupied molecular orbital lineshape in the weakly interacting SL shows a double structure, attributed to two nonequivalent molecules in the ordered configuration.