ABSTRACT
Periodical spatial modulation of the excitonic resonance in a quantum well could lead to the formation of a new highly directional and resonant coherent optical response-resonant diffraction. Such excitonic diffraction gratings were demonstrated in epitaxially grown quantum wells patterned by low-dose ion beam irradiation before or after the growth. In this paper we present a theoretical model of the resonant diffraction formation based on the step-by-step approximation of the Maxwell equation solution. The resulting theory allows us to reliably describe experimental data as well as to predict a way to increase the diffraction efficiency.
ABSTRACT
Coherent optical spectroscopy such as four-wave mixing and photon echo generation deliver rich information on the energy levels involved in optical transitions through the analysis of polarization of the coherent response. In semiconductors, it can be applied to distinguish between different exciton complexes, which is a highly non-trivial problem in optical spectroscopy. We develop a simple approach based on photon echo polarimetry, in which polar plots of the photon echo amplitude are measured as function of the angle φ between the linear polarizations of the two exciting pulses. The rosette-like polar plots reveal a distinct difference between the neutral and charged exciton (trion) optical transitions in semiconductor nanostructures. We demonstrate this experimentally by photon echo polarimetry of a CdTe/(Cd, Mg)Te quantum well. The echoes of the trion and donor-bound exciton are linearly polarized at the angle 2φ with respect to the first pulse polarization and their amplitudes are weakly dependent on φ. While on the exciton the photon echo is co-polarized with the second exciting pulse and its amplitude scales as cosφ.
ABSTRACT
We propose a method of spatial modulation of inhomogeneous broadening of a quantum-well excitonic resonance based on local generation of defects produced by a focused ion beam. The method is applied to fabrication of excitonic diffraction grating in a single quantum-well InGaAs/GaAs structure by irradiating the sample with a beam of 35-keV He+ ions of exposure doses <1012 cm-2. The spectrum of resonant diffraction on such a structure is narrower than that of reflectivity and decreases much faster with increasing temperature. A proposed model of formation of the diffractive response based on the single scattering approximation well describes the results of the spectral and temperature measurements.
