High temperature gate control of quantum well spin memory.

Time-resolved optical measurements in (110)-oriented GaAs/AlGaAs quantum wells show a tenfold increase of the spin-relaxation rate as a function of applied electric field from 20 to 80 kV cm(-1) at 170 K and indicate a similar variation at 300 K, in agreement with calculations based on the Rashba effect. Spin relaxation is almost field independent below 20 kV cm(-1) reflecting quantum well interface asymmetry. The results indicate the achievability of a voltage-gateable spin-memory time longer than 3 ns simultaneously with a high electron mobility.

Precession and motional slowing of spin evolution in a high mobility two-dimensional electron gas.

Optical spin-dynamic measurements in a high-mobility n-doped GaAs/AlGaAs quantum well show oscillatory evolution at 1.8 K consistent with a quasi-collision-free D'yakonov-Perel'-Kachorovskii regime. Above 5 K evolution becomes exponential as expected for collision-dominated spin dynamics. Momentum scattering times extracted from Hall mobility and Monte Carlo simulation of spin polarization agree at 1.8 K but diverge at higher temperatures, indicating the importance of electron-electron scattering and an intrinsic upper limit for the spin-relaxation rate.