A cryogenically cooled 200 kV DC photoemission electron gun for ultralow emittance photocathodes.

Novel photocathode materials like ordered surfaces of single crystal metals, epitaxially grown high quantum efficiency thin films, and topologically non-trivial materials with dirac cones show great promise for generating brighter electron beams for various accelerator and ultrafast electron scattering applications. Despite several materials being identified as brighter photocathodes, none of them have been tested in electron guns to extract electron beams due to technical and logistical challenges. In this paper, we present the design and commissioning of a cryocooled 200 kV DC electron gun that is capable of testing a wide variety of novel photocathode materials over a broad range of temperatures from 298 to 35 K for bright electron beam generation. This gun is designed to enable easy transfer of the photocathode to various standard ultra-high-vacuum surface diagnostics and preparation techniques, allowing a full characterization of the dependence of beam brightness on the photocathode material and surface properties. We demonstrate the development of such a high-voltage, high-gradient gun using materials and equipment that are easily available in any standard university lab, making the development of such 200 kV electron guns more accessible.

Ultracold Electrons via Near-Threshold Photoemission from Single-Crystal Cu(100).

Achieving a low mean transverse energy or temperature of electrons emitted from the photocathode-based electron sources is critical to the development of next-generation and compact x-ray free electron lasers and ultrafast electron diffraction, spectroscopy, and microscopy experiments. In this Letter, we demonstrate a record low mean transverse energy of 5 meV from the cryo-cooled (100) surface of copper using near-threshold photoemission. Further, we also show that the electron energy spread obtained from such a surface is less than 11.5 meV, making it the smallest energy spread electron source known to date: more than an order of magnitude smaller than any existing photoemission, field emission, or thermionic emission based electron source. Our measurements also shed light on the physics of electron emission and show how the energy spread at few meV scale energies is limited by both the temperature and the vacuum density of states.

Reduction of Intrinsic Electron Emittance from Photocathodes Using Ordered Crystalline Surfaces.

The generation of intense electron beams with low emittance is key to both the production of coherent x rays from free electron lasers, and electron pulses with large transverse coherence length used in ultrafast electron diffraction. These beams are generated today by photoemission from disordered polycrystalline surfaces. We show that the use of single crystal surfaces with appropriate electronic structures allows us to effectively utilize the physics of photoemission to generate highly directed electron emission, thus reducing the emittance of the electron beam being generated.

Review and demonstration of ultra-low-emittance photocathode measurements.

This paper reports the development of a simple and reliable apparatus for measuring ultra-low emittance, or equivalently the mean transverse energy from cryogenically cooled photocathodes. The existing methods to measure ultra-low emittance from photocathodes are reviewed. Inspired by the available techniques, we have implemented two complementary methods, the waist scan and voltage scan, in one system giving consistent results. Additionally, this system is capable of measuring the emittance at electric fields comparable to those obtained in DC photoinjectors.

2-D energy analyzer for low energy electrons.

A 2-D electron energy analyzer is designed and constructed to measure the transverse and longitudinal energy distribution of low energy (<1 eV) electrons. The analyzer operates on the principle of adiabatic invariance and motion of low energy electrons in a strong longitudinal magnetic field. The operation of the analyzer is studied in detail and a design to optimize the energy resolution, signal to noise ratio, and physical size is presented. An energy resolution better than 6 meV has been demonstrated. Such an analyzer is a powerful tool to study the process of photoemission which limits the beam quality in modern accelerators.

Ultrabright and ultrafast III-V semiconductor photocathodes.

Crucial photoemission properties of layered III-V semiconductor cathodes are predicted using Monte Carlo simulations. Using this modeling, a layered GaAs structure is designed to reduce simultaneously the transverse energy and response time of the emitted electrons. This structure, grown by molecular beam epitaxy and activated to negative electron affinity, is characterized. The measured values of quantum efficiency and transverse energy are found to agree well with the simulations. Such advanced layered structures will allow generation of short electron bunches from photoinjectors with superior beam brightness.