ABSTRACT
The so-called Storing Matter technique allows the matrix effect observed in secondary ion mass spectrometry to be successfully circumvented. We therefore investigate in this work the depth-profiling capabilities of the Storing Matter technique with a goal of developing protocols for quantitative depth profiles. The effect of the steps involved in the Storing Matter process on the main parameters such as the depth resolution and the dynamic range is studied experimentally and by simulations. A semi-automated process consisting of the sputter-deposition process on a rotating collector in the Storing Matter instrument followed by a complete analysis of the collector by secondary ion mass spectrometry is defined. This protocol is applied to depth profile a B implant in Si and a Sn/Zn multilayered sample, and the results are compared with those obtained with conventional secondary ion mass spectrometry.
ABSTRACT
Matrix effects in secondary ion mass spectrometry render quantitative analysis difficult. In this paper, we report on the quantitative potential of the so-called storing matter technique. On the basis of a case study focusing on Ti sputtered from five different chemical environments (Ti, TiB2,TiC, TiN and TiO2), we demonstrate for the first time that the SIMS matrix effect can be avoided in a multitude of matrices by this novel approach. The effect of the collector material (Au, Ag, Cu, and Ta) on the overall efficiency of the storing matter process is investigated. In addition, the influence of oxygen on the obtained useful yields is exposed. Finally, the performance of the storing matter technique is compared to standard SIMS analysis.
