Analyzing the n-Doping Mechanism of an Air-Stable Small-Molecule Precursor.

Efficient n-doping of organic semiconductors requires electron-donating molecules with small ionization energies, making such n-dopants usually sensitive to degradation under air exposure. A workaround consists in the usage of air-stable precursor molecules containing the actual n-doping species. Here, we systematically analyze the doping mechanism of the small-molecule precursor o-MeO-DMBI-Cl, which releases a highly reducing o-MeO-DMBI radical upon thermal evaporation. n-Doping of N,N-bis(fluoren-2-yl)-naphthalene tetracarboxylic diimide yields air-stable and highly conductive films suitable for application as electron transport layer in organic solar cells. By photoelectron spectroscopy, we determine a reduced doping efficiency at high doping concentrations. We attribute this reduction to a change of the precursor decomposition mechanism with rising crucible temperature, yielding an undesired demethylation at high evaporation rates. Our results do not only show the possibility of efficient and air-stable n-doping, but also support the design of novel air-stable precursor molecules of strong n-dopants.

Minority Currents in n-Doped Organic Transistors.

Doping allows us to control the majority and minority charge carrier concentration in organic field-effect transistors. However, the precise mechanism of minority charge carrier generation and transport in organic semiconductors is largely unknown. Here, the injection of minority charge carriers into n-doped organic field-effect transistors is studied. It is shown that holes can be efficiently injected into the transistor channel via Zener tunneling inside the intrinsic pentacene layer underneath the drain electrode. Moreover, it is shown that the onset of minority (hole) conduction is shifted by lightly n-doping the channel region of the transistor. This behavior can be explained by a large voltage that has to be applied to the gate in order to fully deplete the n-doped layer as well as an increase in hole trapping by inactive dopants.

Doped Organic Transistors.

Organic field-effect transistors hold the promise of enabling low-cost and flexible electronics. Following its success in organic optoelectronics, the organic doping technology is also used increasingly in organic field-effect transistors. Doping not only increases device performance, but it also provides a way to fine-control the transistor behavior, to develop new transistor concepts, and even improve the stability of organic transistors. This Review summarizes the latest progress made in the understanding of the doping technology and its application to organic transistors. It presents the most successful doping models and an overview of the wide variety of materials used as dopants. Further, the influence of doping on charge transport in the most relevant polycrystalline organic semiconductors is reviewed, and a concise overview on the influence of doping on transistor behavior and performance is given. In particular, recent progress in the understanding of contact doping and channel doping is summarized.

Band structure engineering in organic semiconductors.

A key breakthrough in modern electronics was the introduction of band structure engineering, the design of almost arbitrary electronic potential structures by alloying different semiconductors to continuously tune the band gap and band-edge energies. Implementation of this approach in organic semiconductors has been hindered by strong localization of the electronic states in these materials. We show that the influence of so far largely ignored long-range Coulomb interactions provides a workaround. Photoelectron spectroscopy confirms that the ionization energies of crystalline organic semiconductors can be continuously tuned over a wide range by blending them with their halogenated derivatives. Correspondingly, the photovoltaic gap and open-circuit voltage of organic solar cells can be continuously tuned by the blending ratio of these donors.

Adjustable white-light emission from a photo-structured micro-OLED array.

White organic light-emitting diodes (OLEDs) are promising candidates for future solid-state lighting applications and backplane illumination in large-area displays. One very specific feature of OLEDs, which is currently gaining momentum, is that they can enable tunable white light emission. This feature is conventionally realized either through the vertical stacking of independent OLEDs emitting different colors or in lateral arrangement of OLEDs. The vertical design is optically difficult to optimize and often results in efficiency compromises between the units. In contrast, the lateral concept introduces severe area losses to dark regions between the subunits, which requires a significantly larger overall device area to achieve equal brightness. Here we demonstrate a color-tunable, two-color OLED device realized by side-by-side alignment of yellow and blue p-i-n OLEDs structured down to 20 µm by a simple and up-scalable orthogonal photolithography technique. This layout eliminates the problems of conventional lateral approaches by utilizing all area for light emission. The corresponding emission of the photo-patterned two-unit OLED can be tuned over a wide range from yellow to white to blue colors. The independent control of the different units allows the desired overall spectrum to be set at any given brightness level. Operated as a white light source, the microstructured OLED reaches a luminous efficacy of 13 lm W-1 at 1000 cd m-2 without an additional light outcoupling enhancement and reaches a color rendering index of 68 when operated near the color point E. Finally, we demonstrate an improved device lifetime by means of size variation of the subunits.

Advanced Organic Permeable-Base Transistor with Superior Performance.

An optimized vertical organic permeable-base transistor (OPBT) competing with the best organic field-effect transistors in performance, while employing low-cost fabrication techniques, is presented. The OPBT stands out by its excellent power efficiency at the highest frequencies.

Vertical organic transistors.

Organic switching devices such as field effect transistors (OFETs) are a key element of future flexible electronic devices. So far, however, a commercial breakthrough has not been achieved because these devices usually lack in switching speed (e.g. for logic applications) and current density (e.g. for display pixel driving). The limited performance is caused by a combination of comparatively low charge carrier mobilities and the large channel length caused by the need for low-cost structuring. Vertical Organic Transistors are a novel technology that has the potential to overcome these limitations of OFETs. Vertical Organic Transistors allow to scale the channel length of organic transistors into the 100 nm regime without cost intensive structuring techniques. Several different approaches have been proposed in literature, which show high output currents, low operation voltages, and comparatively high speed even without sub-µm structuring technologies. In this review, these different approaches are compared and recent progress is highlighted.

Line-on-line organic-organic heteroepitaxy of quaterrylene on hexa-peri-hexabenzocoronene on Au(111).

In a recent paper, we discussed the optical properties of a heterostructure consisting of a highly ordered monolayer of quaterrylene (QT), electronically decoupled from the gold substrate by a predeposited epitaxial monolayer of hexa-peri-hexabenzocoronene (HBC). Here we now present the detailed structural investigation of this organic double-layer system. We show that the structure of the heterosystem can be identified as line-on-line coincidence (lol), a new type of epitaxy discovered by us previously for the system 3,4,9,10-perylenetetracarboxylic dianhydride (PTCDA) on HBC on highly oriented pyrolytic graphite (HOPG). Additionally, we provide evidence on the basis of advanced potential energy calculations that indeed energetic gain drives this lol growth mode.