Multifaceted array-based keloidal gene expression profiling reveals specific MDFI upregulation in keloid lesions.

BACKGROUND: Keloid lesions are characterized by mesenchymal cell proliferation and excessive extracellular matrix deposition. Previous microarray analyses have been performed to investigate the mechanism of keloid development. However, the molecular pathology that contributes to keloid development remains obscure. AIM: To explore the underlying essential molecules of keloids using microarrays. METHODS: We performed microarray analyses of keloid and nonlesional skin tissues both in vivo and in vitro. Gene expression levels were compared between tissues and cells. Quantitative reverse transcription (qRT)-PCR and immunohistochemical staining were used to determine the expression levels of molecules of interest in keloid tissues. RESULTS: Several common molecules were upregulated in both keloid tissues and keloid-lesional fibroblasts. PTPRD and NTM were upregulated both in vivo and in vitro. The genes MDFI and ITGA4 were located at the centre of the gene coexpression network analysis using keloid tissues. qRT-PCR revealed significant expression levels of PTPRD and MDFI in keloid tissues. Immunopathological staining revealed that MDFI-positive cells, which have fibroblast characteristics, were located in the keloid-associated lymphoid tissue (KALT) portion of the keloid tissue. CONCLUSION: Our gene expression profiles of keloids could distinguish the difference between lesional tissue and cultured lesional fibroblasts, and MDFI was found to be commonly expressed in both tissues and cells. Thus, MDFI-positive cells, which were located in the KALT, may play an important role in keloid pathogenesis and thus might be useful for in vitro keloid studies.

Evaluation of effective energy using radiochromic film and a step-shaped aluminum filter.

Although the half-value layer (HVL) is one of the important parameters for quality assurance (QA) and quality control (QC), constant monitoring has not been performed because measurements using an ionization chamber (IC) are time-consuming and complicated. To solve these problems, a method using radiochromic film and step-shaped aluminum (Al) filters has been developed. To this end, GAFCHROMIC EBT2 dosimetry film (GAF-EBT2), which shows only slight energy dependency errors in comparison with GAFCHROMIC XR TYPE-R (GAF-R) and other radiochromic films, has been used. The measurement X-ray tube voltages were 120, 100, and 80 kV. GAF-EBT2 was scanned using a flat-bed scanner before and after exposure. To remove the non-uniformity error caused by image acquisition of the flat-bed scanner, the scanning image of the GAF-EBT2 before exposure was subtracted after exposure. HVL was evaluated using the density attenuation ratio. The effective energies obtained using HVLs of GAF-EBT2, GAF-R, and an IC dosimeter were compared. Effective energies with X-ray tube voltages of 120, 100, and 80 kV using GAF-EBT2 were 40.6, 36.0, and 32.9 keV, respectively. The difference ratios of the effective energies using GAF-EBT2 and the IC were 5.0%, 0.9%, and 2.7%, respectively. GAF-EBT2 and GAF-R proved to be capable of measuring effective energy with comparable precision. However, in HVL measurements of devices operating in the high-energy range (X-ray CT, radiotherapy machines, and so on), GAF-EBT2 was found to offer higher measurement precision than GAF-R, because it shows only a slight energy dependency.

Half-value layer measurement: simple process method using radiochromic film.

Although the half-value layer (HVL) is one of the important parameters for QA and QC, constant monitoring has not been performed because the measurements using an ionization chamber (IC) are time-consuming and complicated. To solve these problems, the use of radiochromic film (GAFCHROMIC XR TYPE R: GAF-R) with step-shaped aluminum (Al) filters, referred to herein as the simple process method, has been developed. The measurement X-ray tube voltages were 120 kV, 100 kV, and 80 kV. The Al filter area, the full exposure area, and the unexposed area were set on the GAF-R so as to obtain correct data. The HVL was evaluated using the density attenuation ratio. The HVLs obtained using the GAF-R and an 1C dosimeter were compared. HVLs with X-ray tube voltages of 120 kV, 100 kV, and 80 kV using the GAF-R were 4.10 mm, 3.55 mm and 2.97 mm, respectively. The difference ratios of the HVLs using the GAF-R and the IC were 1.2%, 7.6%, and 10.0%, respectively. The HVL at 120 kV can be routinely and quickly measured using the simple process method. Therefore, an IC dosimeter is not needed for HVL measurements for QA and QC. However, the HVL measurements of low energy (100 kV and 80 kV) need attention.