Hierarchical anti-reflective laser-induced periodic surface structures (LIPSSs) on amorphous Si films for sensing applications.

Here, we applied direct laser-induced periodic surface structuring to drive the phase transition of amorphous silicon (a-Si) into nanocrystalline (nc) Si imprinted as regular arrangement of Si nanopillars passivated with a SiO2 layer. By varying the laser beam scanning speed at a fixed pulse energy, we successfully tailored the resulting unique surface morphology of the formed LIPSSs that change from ordered arrangement of conical protrusions to highly uniform surface gratings, where sub-wavelength scale ripples decorate the valleys between near-wavelength scale ridges. Along with the surface morphology, the nc-Si/SiO2 volume ratio can also be controlled via laser processing parameters allowing the tailoring of the optical properties of the produced textured surfaces to achieve anti-reflection performance or partial transmission in the visible spectral range. Diverse hierarchical LIPSSs can be fabricated and replicated over large-scale areas opening a pathway for various applications including optical sensors, nanoscale temperature management, and solar light harvesting. By taking advantage of good wettability, enlarged surface area and remarkable light-trapping characteristics of the produced hierarchical morphologies, we demonstrated the first LIPSS-based surface enhanced fluorescent sensor that allowed the identification of metal cations providing a sub-nM detection limit unachievable by conventional fluorescence measurements in solutions.

Silicon microprotrusions with tailored chirality enabled by direct femtosecond laser ablation.

Here, we report on formation of nanoprotrusions on the surface of a bulk crystalline silicon wafer under femtosecond-laser ablation with a donut-shaped laser beam. By breaking circular symmetry of the irradiating donut-shaped fs-pulse beam, a switch in geometry of the formed surface nanoprotrusions from regular to chiral was demonstrated. The chirality of the obtained Si nanostructures was promoted with an asymmetry degree of the laser beam. An uneven helical flow of laser-melted Si caused by asymmetry of the initial intensity and temperature pattern on the laser-irradiated Si surface explains this phenomenon. Chirality of the formed protrusions was confirmed by visualizing cross-sectional cuts produced by focused ion beam milling as well as Raman activity of these structures probed by circularly polarized light with opposite handedness. Our results open a pathway towards easy-to-implement inexpensive fabrication of chiral all-dielectric nanostructures for advanced nanophotonic applications and sensing of chiral molecules.

Photoluminescence in hexagonal silicon carbide by direct femtosecond laser writing.

Direct femtosecond laser writing has been used to produce localized regions of photo-luminescent emission in 4H- and 6H-silicon carbide (SiC). Arrays of active color centers were fabricated by different pulse laser energies in the sites of square grids at various depths (from surface level to 10 µm below surface). We optically characterized the fabricated color centers using confocal imaging with 532 and 780 nm excitation, photo-luminescence spectroscopy, and lifetime decay at room temperature. We show that the technique can produce specifically the silicon vacancy color center emitting in the range 850-950 nm and other emitters in the 700 nm. This method can be adopted to engineer color centers in (SiC) at different depths in the material for single-photon generation, sensing, display fabrication, and light emitting diodes.