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1.
Resonant Raman scattering by longitudinal-optical phonons in Zn1-xMnxSe (x=0, 0.03, 0.1) near the E0 gap.
Limmer W; Leiderer H; Jakob K; Gebhardt W; Kauschke W; Cantarero A; Trallero-Giner C.
Phys Rev B Condens Matter ; 42(17): 11325-11334, 1990 Dec 15.
Article in English | MEDLINE | ID: mdl-9995421
2.
Raman scattering by the coupled plasmon-LO-phonon modes near the E0+ Delta 0 gap of n-type GaAs: Resonance and interference effects.
Vorlek V; Gregora I; Kauschke W; Menéndez J; Cardona M.
Phys Rev B Condens Matter ; 42(9): 5802-5808, 1990 Sep 15.
Article in English | MEDLINE | ID: mdl-9996166
3.
Resonant Raman scattering in GaP: Excitonic and interference effects near the E0 and E0+ Delta 0 gaps.
Kauschke W; Vorlícek V; Cardona M.
Phys Rev B Condens Matter ; 36(17): 9129-9133, 1987 Dec 15.
Article in English | MEDLINE | ID: mdl-9942774
4.
Resonant Raman scattering by plasmons and LO phonons near the E1 and E1+ Delta 1 gaps of GaSb.
Kauschke W; Mestres N; Cardona M.
Phys Rev B Condens Matter ; 36(14): 7469-7485, 1987 Nov 15.
Article in English | MEDLINE | ID: mdl-9942514
5.
Resonance Raman scattering in GaAs-AlxGa1-xAs superlattices: Impurity-induced Fröhlich-interaction scattering.
Kauschke W; Sood AK; Cardona M; Ploog K.
Phys Rev B Condens Matter ; 36(3): 1612-1619, 1987 Jul 15.
Article in English | MEDLINE | ID: mdl-9942994
6.
Resonant Raman scattering by LO phonons near the E0+ Delta 0 gap of GaSb.
Kauschke W; Cardona M.
Phys Rev B Condens Matter ; 35(18): 9619-9624, 1987 Jun 15.
Article in English | MEDLINE | ID: mdl-9941388
7.
Resonant Raman scattering by LO phonons in AlxGa1-xAs (x < 0.1): Alloying and interference effects.
Kauschke W; Cardona M; Bauser E.
Phys Rev B Condens Matter ; 35(15): 8030-8041, 1987 May 15.
Article in English | MEDLINE | ID: mdl-9941140
8.
Spin relaxation of holes in the split-hole band of InP and GaSb.
Kauschke W; Mestres N; Cardona M.
Phys Rev B Condens Matter ; 35(8): 3843-3853, 1987 Mar 15.
Article in English | MEDLINE | ID: mdl-9941907
9.
Resonance Raman scattering by optical phonons in GaAs near the E0 band gap.
Sood AK; Kauschke W; Menéndez J; Cardona M.
Phys Rev B Condens Matter ; 35(6): 2886-2891, 1987 Feb 15.
Article in English | MEDLINE | ID: mdl-9941768
10.
Stress-induced doubly resonant Raman scattering in GaAs.
Cerdeira F; Anastassakis E; Kauschke W; Cardona M.
Phys Rev Lett ; 57(25): 3209-3212, 1986 Dec 22.
Article in English | MEDLINE | ID: mdl-10033985
11.
Resonant Raman scattering and interference effects of LO phonons at the E0+ Delta 0 gap of InP.
Kauschke W; Cardona M.
Phys Rev B Condens Matter ; 33(8): 5473-5481, 1986 Apr 15.
Article in English | MEDLINE | ID: mdl-9939052
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